NTE77 Silicon NPN Transistor Broadband CATV Driver Description: The NTE77 is an NPN transistor in a TO39 type case designed to be utilized in broadband and linear amplifier circuitry requiring low noise and low intermodulation distortion. This device is suitable for use in CATV driver stages in trunk line, bridger, and line extender amplifiers. Features: D High Gain–Bandwidth Product: fT = 1.5GHz Typ D Low Intermodulation, Low Cross–Modulation Distortion: X–MOD = –57dB D Low Noise Figure: NF = 2.7dB Typ D Low Output Capacitance: Cob = 3.5pF Max @ VCB = 30V Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Total Device Dissipation (TA = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +50°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, IB = 0, Note 1 30 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0, Note 1 50 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 5 – – V – – 0.1 mA Collector Cutoff Current ICEO Note 1. Pulsed through 25mH Inductor. VCE =, 28V, IB = 0 Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ 30 – Max Unit ON Characteristics DC Current Gain hFE VCE = 15V, IC = 50mA fT VCE = 15V, IC = 50mA, f = 200MHz 300 Dynamic Characteristics Current Gain–Bandwidth Product 1500 1800 – MHz Collector Output Capacitance Cob VCB = 30V, IE = 0, f = 1MHz – 2.5 3.5 pF Collector Input Capacitance Cib VEB = 0.5V, IC = 0, f = 1MHz – 8.0 10 pF Functional Test Noise Figure Narrow Band NFNB VCE = 10V, IC = 10mA, f = 200MHz – 2.7 – dB Broad Band NFBB VCE = 15V, IC = 50mA, f = 216MHz – 7.0 8.0 dB GVE VCE = 15V, IC = 50mA, f = 260MHz 6.8 7.2 – dB – –60 –57 dB – –60 –57 dB Power Gain at Optimum Noise Figure Cross–Modulation X–MOD VCE = 15V, IC = 50mA, PO = +45dBmV, Note 2 2nd O Second Order Distortion VCE = 15V, IC = 50mA, PO = +45dBmV, Note 3 Note 2. 12 Channel Flat –– NCTA Channel 2 through 12 100% Mod (Square wave) Channel 13CW Note 3. Channel 2 and Channel G Intermod Product on Channel 13 .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45° .031 (.793)