NTE NTE887

NTE887M
Integrated Circuit
Low Power, JFET OP Amplifier
Description:
The NTE887M is a JFET–input operational amplifier in an 8–Lead DIP type package designed as a
low–power version of the NTE857M amplifier. This device features high input impedance, wide bandwidth, high slew rate, and low input offset and bias current.
Features:
D Very Low Power Consumption
D Typical Supply Current: 200µA
D Wide Common–Mode and Differential Voltage Ranges
D Low Input Bias and Offset Currents
D Common–Mode Input Voltage Range Includes VCC+
D Output Short–Circuit Protection
D High Input Impedance: JFET–Input Stage
D Internal Frequency Compensation
D Latch–Up–Free Operation
D High Slew rate: 3.5V/µs Typ
Absolute Maximum Ratings: (TA = 0° to +70°C unless otherwise specified)
Supply Voltage (Note 1), VCC+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +18V
Supply Voltage (Note 1), VCC– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –18V
Differential Input Voltage (Note 2), VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Input Voltage (Note 1, Note 3), VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Duration of Output Short Circuit (Note 4), ts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited
Continuous Total Dissipation, PD
TA ≤ +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 680mW
Derate Above +65°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
TA = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mW
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering, 1/16” (1.6mm) from case for 10sec), TL . . . . . . . . . . . +260°C
Note 1. All voltage values, except differential voltages, are with respect to the midpoint between
VCC+ and VCC–.
Note 2. Differential voltages are at the non–inverting input pin with respect to the inverting input pin.
Note 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage
or 15V, whchever is less.
Note 4. The output may be shorted to GND or to either supply. Temperature and/or supply voltages
must be limited to ensure that the dissipation rating is not exceeded.
Electrical Characteristics: (VCC± = ±15V, Note 5 unless otherwise specified)
Parameter
Input Offset Voltage
Temperature Coefficient of
Input Offset Voltage
Input Offset Current
Input Bias Current
Symbol
VIO
aVIO
IIO
IIB
Test Conditions
Min
Typ
Max
Unit
TA = +25°C
–
3
15
mV
TA = 0° to +70°C
–
–
20
mV
VO = 0, RS = 50Ω, TA = 0° to +70°C
–
10
–
µV/°C
VO = 0, Note 6
TA = +25°C
–
5
200
pA
TA = 0° to +70°C
–
–
5
nA
TA = +25°C
–
30
400
pA
TA = 0° to +70°C
–
–
10
nA
±11
–12
+15
–
V
VO = 0,
RS = 50Ω
Ω
VO = 0, Note 6
Common–Mode Input Voltage Range
VICR
TA = +25°C
Maximim Peak Output Voltage Swing
VOM
RL = 10kΩ, TA = +25°C
±10.0 ±13.5
–
V
RL ≥ 10kΩ, TA = 0° to +70°C
±10.0
–
–
V
TA = +25°C
3
6
–
V/mV
TA = 0° to +70°C
3
–
–
V/mV
RL = 10kΩ, TA = +25°C
–
1
–
MHz
TA = +25°C
–
1012
–
Ω
VIC = VICRmin, VO = 0, RS = 50Ω,
TA = +25°C
70
86
–
dB
VCC = ±15V to ±9V, VO = 0,
RS = 50Ω, TA = +25°C
70
95
–
dB
Large–Signal Differential Voltage
Amplification
Unity–Gain Bandwidth
AVD
B1
Input Resistance
ri
Common–Mode Rejection Ratio
CMRR
Supply Volatge Rejection Ratio
(∆VCC±/∆VIO)
kSVR
VO = ±10V,
RL ≥ 10kΩ
Ω
Total Power Dissipation
PD
No Load, VO = 0, TA = +25°C
–
6.0
7.5
mW
Supply Current
ICC
No Load, VO = 0, TA = +25°C
–
200
250
µA
AVD = 100, TA = +25°C
–
120
–
dB
Crosstalk Attenuation
Vo1/Vo2
Note 5. All characteristics are measured under open–loop conditions with zero common–mode voltage unless otherwise specified.
Note 6. Input bias currents of a FET–input operational amplifier are normal junction reverse currents,
which are temperature sensitive. Pulse techniques must be used that will maintain the junction temperature as close to the ambient temperature as possible.
Operating Characteristics: (VCC± = ±15V, TA = +25°C unless otherwise specified)
Parameter
Slew Rate at Unity Gain
Rise Time
Symbol
SR
tr
Test Conditions
VI = 10V, RL = 10kΩ, CL = 100pF
VI = 20mV, RL = 10kΩ, CL = 100pF
Overshoot Factor
Equivalent Input Noise Voltage
Vn
RS = 100Ω, f = 1kHz
Min
Typ
Max
Unit
1.5
3.5
–
V/µs
–
0.2
–
µs
–
10%
–
–
42
–
nV/√Hz
Pin Connection Diagram
Offset Null 1 1
Inverting Input
8
N.C.
7 VCC (+)
2
Non–Inverting Input 3
6
Output
VCC (–) 4
5
Offset Null 2
8
5
.260 (6.6)
1
4
.300
(7.62)
.390 (9.9)
Max
.155
(3.93)
.100 (2.54)
.145 (3.68)
.300 (7.62)