This version: Jul. 1998 Previous version: Jan. 1998 E2Q0011-38-71 ¡ electronic components KGF1146 ¡ electronic components KGF1146 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1146 is a two-stage small-signal UHF-band amplifier that features low current operation, high output power, and high isolation. The KGF1146 specifications are guaranteed to a fixed matching circuit for 5 V and 850 MHz; external impedance-matching circuits are also required. Because of the high isolation, the KGF1146 is an ideal part for a VCO-buffer amplifiers and an intermediate-stage amplifier for personal handy phones, such as cellular phones. FEATURES • Low current operation: 2.5 mA (max.) • High output power: 1.5 dBm (min.) • High isolation: –40 dB • Self-bias circuit configuration with built-in source capacitor • Package: 4PSOP PACKAGE DIMENSIONS 1.8±0.1 0.85±0.05 0.36 0.74 0.3 MIN 1.1±0.15 0.4 +0.1 –0.05 1.5±0.15 3.0±0.2 0.6 +0.1 –0.05 0 to 0.15 Package material 1.9±0.1 Lead frame material 0.125 +0.03 –0 2.8±0.15 Epoxy resin Pin treatment 42 alloy Solder plating Solder plate thickness 5 mm or more (Unit: mm) 1/7 ¡ electronic components KGF1146 MARKING (4) (3) B X X (1) (2) ALPHABETICAL LOT NUMBER NUMERICAL PRODUCT TYPE (1) Gate (2) Source (3) Drain (4) GND CIRCUIT D (3) (1) G S (2) 100 pF (4) GND APPLICATION EXAMPLE FOR PORTABLE PHONES Transmission system intermediate frequency GaAs device KGF1305 Antenna Power amplifier KGF1165 KGF1254/56 Driver amplifler SAW filter Wide-band amplifier KGL2115 Duplexer KGF1145/46 VCO Buffer amplifier. Oscillator Divider 1 n Filter Divider 1 n Filter Prescaler Prescaler KGL2115 KGF1155 KGF1175 Buffer amplifier. Oscillator Mixer amplifier VCO Head amplifier SAW filter Receiving system intermediate frequency KGF1145/46 2/7 ¡ electronic components KGF1146 ABSOLUTE MAXIMUM RATINGS Item (Ta = 25°C) Symbol Unit Min. Max. Drain-source voltage VDS V — 6 Gate-source voltage VGS V –3 0.4 Drain current IDS mA — 60 Total power dissipation Ptot mW — 200 Channel temperature Tch °C — 150 Storage temperature Tstg °C –45 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Symbol Condition Unit Min. Max. Gate-source leakage current IGSS VGS = –3 V mA — 12 Gate-drain leakage current IGDO VGDO = –6 V mA — 60 Drain-source leakage current Drain current Operating current VDS = 3 V, VGS = –2.0 V mA — 120 IDSS VDS = 3 V, VGS = 0 V mA 15 — ID (*1), PIN = –10 dBm mA — 2.5 V –1.5 –0.5 IDS(off) VGS(off) VDS = 3 V, IDS = 120 mA Transconductance gm VDS = 3 V, IDS = 2.0 mA mS 8 — Output power PO (*1), PIN = –10 dBm dBm 1.5 — Isolation ISO (*1), PIN = –10 dBm dB 40 — Gate-source cut-off voltage *1 Self-bias condition: VDD = 5.0 ± 0.25 V, VG = 0 V, f = 850 MHz 3/7 ¡ electronic components KGF1146 RF CHARACTERISTICS Po vs. PIN 3 –10 2 –20 1 VDD = 4.75 V f = 850 MHz –30 –40 –30 –20 –10 0 Operating Current Output Power Po (dBm) 4 0 ID (mA) 5 10 0 Input Power PIN (dBm) 4/7 ¡ electronic components KGF1146 Typical S Parameters VDD = 5 V, ID = 1.85 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 1.016 –13.78 3.144 –53.83 0.002 91.21 0.954 –7.09 600.0 1.008 –16.42 3.184 –65.20 0.002 72.13 0.954 –8.39 700.0 1.002 –19.14 3.091 –76.19 0.001 88.37 0.954 –9.92 800.0 0.995 –21.80 3.060 –84.59 0.002 87.52 0.952 –11.21 900.0 0.988 –24.38 2.952 –92.88 0.003 75.89 0.950 –12.84 1000.0 0.981 –26.95 2.961 –98.49 0.002 69.05 0.948 –14.07 1100.0 0.973 –29.64 2.741 –105.75 0.001 51.70 0.952 –15.34 1200.0 0.963 –32.24 2.687 –111.43 0.002 89.09 0.944 –16.82 1300.0 0.956 –34.90 2.557 –117.29 0.001 31.04 0.945 –18.09 1400.0 0.945 –37.58 2.481 –122.72 0.001 96.43 0.941 –19.74 1500.0 0.938 –40.39 2.316 –129.37 0.001 138.33 0.941 –20.90 1600.0 0.929 –42.98 2.187 –134.82 0.001 124.06 0.937 –22.03 1700.0 0.918 –46.03 2.009 –140.24 0.002 –115.76 0.941 –23.52 1800.0 0.906 –48.76 1.872 –151.35 0.001 –129.25 0.932 –24.82 1900.0 0.897 –51.64 1.775 –155.91 0.003 –128.46 0.934 –26.27 2000.0 0.880 –54.61 1.710 –161.08 0.003 –121.98 0.929 –27.28 2100.0 0.868 –57.75 1.650 –166.40 0.005 –139.31 0.926 –28.67 2200.0 0.855 –60.87 1.562 –171.49 0.007 –126.58 0.927 –29.86 2300.0 0.847 –63.86 1.499 –176.27 0.008 –127.50 0.923 –30.90 2400.0 0.830 –66.88 1.470 179.50 0.009 –139.94 0.924 –32.30 2500.0 0.819 –69.77 1.413 176.86 0.013 –129.23 0.920 –33.42 2600.0 0.804 –72.90 1.364 174.40 0.014 –134.15 0.919 –34.91 2700.0 0.792 –76.11 1.337 169.45 0.016 –136.16 0.914 –35.62 2800.0 0.778 –79.41 1.304 164.51 0.019 –140.71 0.916 –37.07 2900.0 0.770 –82.77 1.287 159.93 0.024 –134.62 0.914 –37.84 3000.0 0.754 –85.91 1.238 155.02 0.028 –137.56 0.916 –38.89 5/7 ¡ electronic components KGF1146 Typical S Parameters VDD = 5 V, ID = 1.85 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W j1.0 90 j0.5 j2.0 45 135 j0.2 j5.0 0.5 3.0 180 0.5 5.0 4.0 3.0 S22 1.0 0.01 0.02 0.03 0.04 0.05 0 S12 0.5 3.0 2.0 3.0 0.5 S21 S11 3.0 0.0 0.2 0.5 1.0 2.0 5.0 6/7 ¡ electronic components KGF1146 Test Circuit L1 IN Cc W2 L2 L2 L1 W1 L3 Cc W1 C1 C2 OUT L3 W2 Vd Cc L1 = 20 mm L2 = 8 mm L3 = 10 mm W1 = 1 mm W2 = 3 mm Cc = 1000 pF C1, C2: Trimmer Capacitor (Murata Giga-Trimmer, max. 4.5 pF) Substrate parameters er = 2.6 h = 1.6 mm C1 and C2 are tuned to obtain maximum output power. 7/7