OKI KGF2701

This version: Jul. 1998
Previous version: Jan. 1998
E2Q0045-38-71
¡ electronic components
KGF2701
¡ electronic components
KGF2701
Wide-Band Amplifier
GENERAL DESCRIPTION
The KGF2701, housed in a SMD-type 8-pin ceramic package, is a two-stage amplifier that
features flat and high gain over a wide range of frequencies, internal input and output matching,
and high output power. The internally matched 50 W input and output eliminate external
impedance-matching circuits. The KGF2701 is ideal as a medium-power amplifier in the
frequency range of 0.8 GHz to 4 GHz.
FEATURES
• Flat gain property from 0.8 GHz to 4 GHz
• Input and output 50 W matched impedance
• Single power supply: 5 V (typ.)
• High linear gain: 16 dB (min.)
• High output power: 14 dBm (min.)
• Low noise: 4.5 dB (typ.)
• Package: 8PFP
PACKAGE DIMENSIONS
1.27±0.2
0.5±0.15
2.0±0.3
INDEX MARK
7.0±0.3
3.0±0.15
5.0±0.2
4.5±0.2
2.0±0.3
0.63±0.15
0.10 +0.05
–0
4.5±0.2
5.0±0.2
1.7±0.2
Package material
Lead frame material
Pin treatment
(Unit: mm)
plate thickness
Al203
Fe-Ni-Co alloy
Ni/Au plating
Au:1.0 µm or more
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KGF2701
MARKING
(8) (7) (6) (5)
K2701
¡
XXX
PRODUCT TYPE
COMPANY LOGO
LOT NUMBER
INDEX
(1) (2) (3) (4)
(1) Input
(5) Output
(2) GND
(6) GND
(3) GND
(7) GND
(4) VDD
(8) AGC
CIRCUIT
(4) VDD
Output
(5)
Input
(1)
(8)
AGC
(2), (3), (6), (7)
GND
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KGF2701
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Condition
Unit
Min.
Max.
VDD
Ta = 25°C
V
—
8
Input power
PIN
Ta = 25°C
dBm
—
6
Total power dissipation
Ptot
Ta = 25°C
mW
—
800
Channel temperature
Tch
—
°C
—
150
Storage temperature
Tstg
—
°C
–45
125
Supply voltage
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Operating current
Symbol
IDD
Isolation
|S12|
Linear gain
GLIN
Gain flatness
Condition
(*1), PIN = –20 dBm
f = 2.5 GHz
(*1), PIN = –20 dBm
Unit
Min.
Typ.
Max.
mA
—
70
90
dB
—
–30
–25
dB
16.0
17.5
—
G
f = 0.8 GHz
dB
—
1.8
2.5
Input return loss
|S11|
f = 2.5 GHz
dB
—
–10
–8
Output return loss
|S22|
f = 4.0 GHz
dB
—
–10
–8
Output power
PO1
dBm
14
16
—
Noise figure
F
Third-order intercept point
IP3
Thermal resistance
Rth
(*1), f = 2.5 GHz
Channel to case
dB
—
4.5
—
dBm
—
25
—
°C/W
—
55
—
*1 Self-bias condition: VDD = 5.2 V, VAGC = 0 V
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KGF2701
RF CHARACTERISTICS
KGF2701
GLIN and Noise Figure vs. Frequency
KGF2701
Input, Output Return Loss and lsolation vs. Frequency
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KGF2701
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KGF2701
Test Circuit Board for KGF2701
(8)
(1)
K2701
¡
XXX
(5)
(4)
Covered wire
VAGC
6 - f2.0
Thru hole
6 - f1.0
Thru hole
GND
Microstrip line
(Z0 = 50 W)
0.9
45
0.9
IN
OUT
Chip capacitor
4 - 1000 pF
GND
VDD
35
(Unit: mm)
Substrate: Teflon-fiberglass
(0.33 mmt, 35 mmt Cu plated both side, er = 2.5)
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KGF2701
Application Note
Example 1: Single-stage Amplifier with AGC
Feed through
Capacitor 1000 pF
VDD +5 V
0.1 mF
1000 pF
(4)
50 W Line (1)
(5) 50 W Line
KGF
2701
(2), (3), (6), (7)
(8)
IN
OUT
1 kW
AGC
1000 pF
0.1 mF
Example 2: Two-stage Amplifier
Feed through
Capacitor 1000 pF
VDD +5 V
0.1 mF
IN
50 W Line (1)
KGF
2701
1000 pF
0.1 mF
1000 pF
(4)
(4)
50 W Line (1)
(5) 50 W Line
KGF
2701
(2), (3), (6), (7), (8)
(2), (3), (6), (7), (8)
(5)
OUT
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