PEDR27V3202E-01-01 1Semiconductor MR27V3202E This version : Dec. 1999 Previous version: ---------- Preliminary 2,097,152–Word × 16–Bit or 4,194,304–Word × 8–Bit One Time PROM GENERAL DESCRIPTION The MR27V3202E is a 32 Mbit electrically Programmable Read-Only Memory that can be electrically switched between 2,097,152-word × 16-bit and 4,194,304-word × 8-bit configurations. This device operates on a single +3.3V power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clocks, making this device easy-to-use. The MR27V3202E is suitable as large-capacity fixed memory for microcomputers and data terminals. It is manufactured using a CMOS double silicon gate technology and is offered in 44-pin SOP or 44-pin TSOP(II) packages. FEATURES ∙ 2097,152-word × 16-bit/4,194,304-word × 8-bit electrically switchable configuration ∙ +3.3 V power supply ∙ Access time 90 ns MAX ∙ Operating current 50 mA MAX ∙ Standby current 50 µA MAX ∙ Input/Output TTL compatible ∙ Three-state output ∙ Packages: 44-pin plastic SOP (SOP44-P-600-1.27-K) (Product Name : MR27V3202EMA) 44-pin plastic TSOP (TSOP II 44-P-400-0.80-K) (Product Name : MR27V3202ETP) 1/10 PEDR27V3202E-01-01 1Semiconductor MR27V3202E PIN CONFIGURATION (TOP VIEW) NC 1 44 A20 A18 2 43 A19 A17 3 42 A8 A7 4 41 A9 A6 5 40 A10 A5 6 39 A11 A4 7 38 A12 A3 8 37 A13 A2 9 36 A14 A1 10 35 A15 A0 11 34 A16 CE 12 33 BYTE/VPP VSS 13 32 VSS OE 14 31 D15/A–1 D0 15 30 D7 D8 16 29 D14 D1 17 28 D6 D9 18 27 D13 D2 19 26 D5 D10 20 D3 21 D11 22 25 D12 24 D4 23 VCC 44-pin SOP, TSOP(II) Pin name Functions D15/A–1 Data output/Address input A0 to A20 Address input D0 to D14 Data output CE Chip enable OE Output enable BYTE/VPP VCC Mode switch/Program power supply voltage Power supply voltage VSS GND NC Non connection 2/10 PEDR27V3202E-01-01 1Semiconductor MR27V3202E BLOCK DIAGRAM A–1 × 8/× 16 Switch BYTE/VPP CE OE PGM Row Decoder OE Memory Cell Matrix 2,097,152 × 16-Bit or 4,194,304 × 8-Bit Multiplexer Column Decoder Address Buffer A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 CE Output Buffer D0 D2 D1 D4 D3 D6 D5 D8 D7 D10 D9 D12 D11 D14 D13 D15 In 8-bit output mode, these pins are three-stated and pin D15 functions as the A-1 address pin. FUNCTION TABLE CE OE BYTE/VPP Read (16-Bit) L L H Read (8-Bit) L L L Output disable L H Standby H ∗ Program L H Program inhibit H H Program verify H L Mode H L VCC D0 to D7 D8 to D14 D15/A–1 DOUT DOUT 3.3 V H Hi–Z Hi–Z Hi–Z L L/H ∗ ∗ DIN 9.75 V 4.0 V Hi–Z DOUT ∗: Don’t Care (H or L) 3/10 PEDR27V3202E-01-01 1Semiconductor MR27V3202E ABSOLUTE MAXIMUM RATINGS Parameter Symbol Operating temperature under bias Storage temperature Condition Ta — Tstg Input voltage VI Output voltage VO Power supply voltage VCC Program power supply voltage VPP Power dissipation per package PD relative to VSS Value Unit 0 to 70 °C –55 to 125 °C –0.5 to VCC+0.5 V –0.5 to VCC+0.5 V –0.5 to 5 V –0.5 to 11.5 V 1.0 W — RECOMMENDED OPERATING CONDITIONS (Ta = 0 to 70°C) Parameter Symbol VCC power supply voltage VCC VPP power supply voltage VPP Input “H” level VIH Input “L” level VIL Condition VCC = 3.0 to 3.6 V Min. Typ. Max. Unit 3.0 — 3.6 V –0.5 — VCC+0.5 V 2.2 — VCC+0.5∗ V –0.5∗∗ — 0.6 V Voltage is relative to VSS. ∗ : Vcc+1.5V(Max.) when pulse width of overshoot is less than 10ns. ∗∗ : -1.5V(Min.) when pulse width of undershoot is less than 10ns. 4/10 PEDR27V3202E-01-01 1Semiconductor MR27V3202E ELECTRICAL CHARACTERISTICS DC Characteristics (VCC = 3.3 V ± 0.3 V, Ta = 0 to 70°C) parameter Input leakage current Symbol Condition Min. Typ. Max. Unit ILI VI = 0 to VCC — — 10 µA ILO VO = 0 to VCC — — 10 µA VCC power supply current ICCSC CE = VCC — — 50 µA (Standby) ICCST CE = VIH — — 1 mΑ ICCA CE = VIL, OE = VIH tc = 90 ns — — 50 mA VPP power supply current IPP VPP = VCC — — 10 µA Input “H” level VIH — 2.2 — VCC+0.5∗ V Input “L” level VIL — –0.5∗∗ — 0.6 V Output “H” level VOH IOH = –2 mA 2.4 — — V Output “L” level VOL IOL = 4 mA — — 0.4 V Output leakage current VCC power supply current (Read) Voltage is relative to VSS. ∗ : Vcc+1.5V(Max.) when pulse width of overshoot is less than 10ns. ∗∗ : -1.5V(Min.) when pulse width of undershoot is less than 10ns. AC Characteristics (VCC = 3.3 V ± 0.3 V, Ta = 0 to 70°C) Parameter Address cycle time Symbol Condition Min. Max. Unit tC — 90 — ns tACC CE = OE = VIL — 90 ns CE access time tCE OE = VIL — 90 ns OE access time tOE CE = VIL — 45 ns tCHZ OE = VIL 0 30 ns tOHZ CE = VIL 0 25 ns tOH CE = OE = VIL 0 — ns Address access time Output disable time Output hold time Measurement conditions Input signal level -------------------------------- 0 V/3 V Input timing reference level ------------------ 0.8 V/2.0 V Output load--------------------------------------- 100 pF Output timing reference level ---------------- 0.8 V/2.0 V 1.73 V 330 Ω Output 100 pF (Including scope and jig) 5/10 PEDR27V3202E-01-01 1Semiconductor MR27V3202E TIMING CHART (READ CYCLE) 16-Bit Read Mode (BYTE BYTE = VIH) tC A0 to A20 tOH tCE CE tCHZ tOE OE tACC tOHZ Valid Data D0 to D15 Hi-Z Hi-Z 8-Bit Read Mode (BYTE BYTE = VIL) tC A–1 to A20 tOH tCE CE tCHZ tOE OE tOHZ tACC Valid Data D0 to D7 Hi-Z D8 to D14 Hi-Z Hi-Z 6/10 PEDR27V3202E-01-01 1Semiconductor MR27V3202E ELECTRICAL CHARACTERISTICS (PROGRAMMING OPERATION) DC Characteristics (Ta = 25°C ± 5°C) Parameter Symbol Condition Min. Typ. Max. Unit ILI VI = VCC+0.5 V — — 10 µA VPP power supply current (Program) IPP2 CE = VIL — — 50 mA VCC power supply current ICC — — — 50 mA Input “H” level VIH — 3.0 — VCC+0.5 V Input leakage current Input “L” level VIL — –0.5 — 0.8 V Output “H” level VOH IOH = –400 µA 2.4 — — V Output “L” level VOL IOL = 2.1 mA — — 0.45 V Program voltage VPP — 9.5 9.75 10.0 V VCC power supply voltage VCC — 3.9 4.0 4.1 V Voltage is relative to VSS. AC Characteristics (VCC = 4.0 V ± 0.1 V, BYTE/VPP = 9.75 V ± 0.25 V, Ta = 25°C ± 5°C) Symbol Condition Min. Typ. Max. Unit Address set-up time Parameter tAS — 100 — — ns OE set-up time tOES — 2 — — µs Data set-up time tDS — 100 — — ns Address hold time tAH — 2 — — µs Data hold time tDH — 100 — — ns Output float delay time from OE tOHZ — 0 — 100 ns VPP voltage set-up time tVS — 2 — — µs Program pulse width tPW — 9 10 11 µs Data valid from OE tOE — — — 100 ns Address hold from OE high tAOH — 0 — — ns Pin Check Function Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM programmer. Setting up address as following condition call the preprogrammed codes on device outputs. (VCC = 3.3 V ± 0.3 V, CE = VIL, OE = VIL, BYTE/VPP = VIH, Ta = 25°C ± 5°C) A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 DATA ∗ 0 1 0 1 0 1 0 1 0 VH 0 1 0 1 0 1 0 0 1 1 0 FF00 1 0 1 0 1 0 1 0 1 VH∗ 1 0 1 0 1 0 1 1 0 0 1 00FF Other conditions FFFF ∗: VH = 8 V ± 0.25 V 7/10 PEDR27V3202E-01-01 1Semiconductor MR27V3202E Consecutive Programming Waveforms A0 to A20 tAS tAH CE tPW High OE tDH tDS Din D0 to D15 Din tVS BYTE/Vpp Consecutive Program Verify Waveforms A0 to A20 High CE tACC tAHO OE tOE D0 to D15 BYTE/Vpp tOHZ Dout Dout 9.75 V 8/10 PEDR27V3202E-01-01 1Semiconductor MR27V3202E Program and Program Verify Cycle Waveforms A0 to A20 tAS tAHO CE tPW tOES OE tOHZ tDH tDS tOE tOHZ Dout Din D0 to D15 9.75 V BYTE/Vpp Pin Capacitance (VCC = 3.3 V, Ta = 25°C, f = 1 MHz) Parameter Symbol Input CIN1 BYTE/VPP CIN2 Output COUT Condition VI = 0 V VO = 0 V Min. Typ. Max. — — 8 — — 120 — — 10 Unit pF 9/10 PEDR27V3202E-01-01 1Semiconductor MR27V3202E Programming/Verify Flow Chart Programming Verify Start Start Pin Check Pin Check NG Bad Insertion NG Bad Insertion PASS PASS Address = First Location Address = First Location VCC = 4.0 V VCC = 3.0 V/VPP = 3.0 V VPP = 9.75 V Verify(One Byte) NG PASS Program 10 µs VCC = 3.6 V/VPP = 3.6 V Increment Address NO Last Address? Verify(One Byte) YES NG PASS Address = First Location Device Passed Device Failed X=0 NG Verify(One Byte) X = X+1 PASS Increment Address NO YES Last Address? X = 2? YES NO VCC = 3.0 V/VPP = 3.0 V Verify(One Byte) Program 10 µs NG PASS Device Passed Device Failed 10/10