This version: Jan. 1998 Previous version: May. 1997 E2P0059-37-X2 ¡ electronic components OPA256C–1 IMAGE SENSORS OPA256C–1 Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA256C-1 is a 256-bit, one-dimensional diode array comprised of PN junction photodetector diodes and CCDs (charge coupled devices). By using a two-phase clock pulse, transfer pulse, and reset pulse, the OPA256C-1 can measure incident light. FEATURES • CCD for high sensitivity • CCD transfer efficiency greater than 99.995% • Photodetector configured of PN junction photodetector diodes for good blue sensitivity and good output uniformity. • Photodiodes highly integrated with 13 µm pitch for high resolution • High-speed scanning • Low-voltage operation • Internal output amplifier and compensating amplifier APPLICATIONS • • • • Industrial control Pattern recognition Control devices Object detection PIN CONFIGURATION • Dimensions (Unit: mm) 22.86±0.3 0.4 * 7.36±0.2 18 17 16 15 14 13 12 11 10 6 7 1st Bit 8 9 0.46 2.54 2.4±0.2 5 1.1±0.2 * 9.8±0.6 4 * 5.0min. 3 2.5±0.35 2 0.51min. 1 0.25 7.62 20.32±0.25 * : Indicates photodetector location This Material Copyrighted By Its Respective Manufacturer 1/10 IMAGE SENSORS OPA256C–1 • Pin Connection Block Diagram CS 18 OS 17 f2B 15 0D 16 f1B 14 fT 13 TP1 12 TP2 11 PG 10 8 TP4 9 VSS Transfer gate Photo-gate 1 2 Photodiodes F255 256 Photo-gate Transfer gate Output gate Preamplifier Compensating preamplifier BCCD analog shift register BCCD analog shift register 1 RD 2 fR 3 OG 4 f2A 5 f1A 6 fT 7 TP3 SS Name Symbol Symbol Name RD Reset transistor drain TP1 Test pin (electrical input gate) fR TP2 Test pin (electrical input diode) OG Reset transistor gate clock Output gate TP3 Test pin (electrical input gate) f1A CCD register clock TP4 Test pin (electrical input diode) f1B CCD register clock VSS Substrate bias f2A CCD register clock PG Photo-gate f2B CCD register clock OD Output transistor drain fT Phototransfer gate clock OS Output transistor source (video output) CS Compensating transistor source (noise output) This Material Copyrighted By Its Respective Manufacturer 2/10 IMAGE SENSORS OPA256C–1 ABSOLUTE MAXIMUM RATINGS Symbol Tstg Test Condition Min. Max. Unit ‚— –40 +125 °C Operating Temperature Top — –20 +85 °C Clock Voltage Vf –0.3 +18 V Applied Voltage VDD –0.3 +18 V Parameter Storage Temperature Ta=25°C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Symbol Parameter Reset Drain Voltage VDD Output Transistor Drain Voltage Min. Typ. Max. Unit VOD 11.4 12 12.6 V VRD 11.4 12 12.6 V VOG 4.75 5 5.25 V Photo Gate Voltage VPG 4.75 5 5.25 V Substrate Bias VSS –1.5 –2.0 –2.5 V Electrical Input Diode Voltage (TP2, 4) VIS 11.4 12 12.6 V Electrical Input Gate Voltage (TP1, 3) "H" CCD register "L" VIG –0.1 0 0.2 V Vf1,AB2 H 7 VDD VDD V Clock Pulse Voltage Output Gate Voltage Vf L 0 0.4 0.8 V Vf 1,AB2 7 VDD VDD V "L" VfTL 0 0.4 0.8 V "H" VfRH 7 VDD VDD V "L" VfRL 0 0.4 0.8 V "H" Photo-transfer Reset fV 0.1 — 4 MHZ Cf 1,AB2 — 80 — pF Photo-transfer CfT — 10 — pF Reset CfR — 4 — pF PD — 80 — mW RL — 1 — kW Video Frequency Clock Input Capacitance AB 1, 2 CCD register Power Dissipation Output Load Resistance This Material Copyrighted By Its Respective Manufacturer 3/10 IMAGE SENSORS OPA256C–1 POTOELECTRIC CHARACTERISTICS Symbol Parameter (Ambient Temperature Ta=25°C) Min. Typ. Max. Unit Note Sensitivity RW — 1500 — mV/Rx • sec *1 Saturation Output Voltage Vsat 180 250 — mV *2 U — — ±7 % *3 Output DC Level Vdc — 4.0 — V — Dark Output Voltage Vd — — 4 mV *4 Output Uniformity <*007*> (Overall) *1 2856K tungsten lamp *2 VRD, VDD=12 V, VSS=2.0 V, RL=1 kW *3 When it is 50 percent of the saturation output (2856K tungsten lamp.) However, this excludes the 1st, 2nd, and 256th bits *4 Storage time is assumed to be 10 ms. PIXEL CONFIGURATION (Ambient Temperature Ta=25°C) Symbol Central Value Accuracy Unit Arrangement — Straight line —- — Number of Pixels — 256 — — P 13 ±2.0 mm Parameter Pixels Pitch Photodiode Width Aperture Width Sensor Length ,, D 8 ±2.0 mm W 18 ±2.5 mm L 3328 ±3.0 mm * See output timing for information concerning dummy pixels. Pixcel Configration Diagram Q,¢¢Q,¢¢ ¢Q,¢¢ ,, QQ , Q ¢ ,, QQ ¢Q,¢¢QQ,,¢Q,¢¢ ¢Q,¢Q,¢Q, ,, QQ Light shield layer (Al) W Photodiode D D P ,,¢Q, ¢ QQ ¢¢ ,¢Q, Q L This Material Copyrighted By Its Respective Manufacturer 4/10 IMAGE SENSORS OPA256C–1 CLOCK INPUT TIMING CHARACTERISTICS (Ambient Temperature Ta=25°C) Register Parameter Symbol Min. Typ. Max. Unit Rise time trf — 30 100 ns Fall time tff — 20 100 ns *1 Overlap time tOf1, 2 0 20 100 ns *2 Blank time tBf1, 2 — 20 100 ns *3 Rise time trfT — 30 100 ns tffT — 20 100 ns Fall time Phototransfer Transfer time duration Reset Note tWfr 5 10 15 ms Setup time tSfT 0 1 10 ms Hold time tHfT 0 1 10 ms Rise time trfR — 30 100 ns Fall time trfR — 20 100 ns Duration tWfR 80 — 2000 ns Setup time tSfR 170 — 2000 ns Hold time tHfR 0 — 2000 ns *4 *5 OPA256C–1 Input Timing Diagrams *1 f1 AB or f2 AB f2 AB or f1 AB trf 90% 100% tff *2 fA2 or fB1 1 V 2 OG fA1 or fB2 to f1, 2 Limited to periods during fA1 rise and fA2 fall, and fB2 rise and fB1 fall. This Material Copyrighted By Its Respective Manufacturer 5/10 IMAGE SENSORS OPA256C–1 *3 fA1 or fB2 1 V 2 OG fA2 or fB1 tBf1, 2 Limited to periods during fA2 rise and fA1 fall, and fB1 rise and fB2 fall. *4 f1 10% AB tWfT tSfT tHfT 90% 50% 10% fT trfT tffT *5 fA1 or fB2 90% 10% 90% fB2 or fA1 fR This Material Copyrighted By Its Respective Manufacturer 10% tSfR trfR tWfR tHfR tffR 90% 50% 10% 6/10 IMAGE SENSORS OPA256C–1 Input Timing Chart tINT tS tT tH f1 AB f2 AB fR CS OS D1 D2 D3 Dummy output DW dummy S1 S2 S256 S255 VIDEO OUTPUT TIMING CHARACTERISTICS (Ambient Temperature Ta=25°C) Parameter Symbol Guaranteed Values Min. Typ. Max. Unit Note Video Rise Delay Time tdrv — 55 — ns — Video Rise Time trv — 55 — ns — Video Fall Delay Time tdfv — 15 — ns — Video Fall Time tfv — 30 — ns — Conditions VDD=VRD=Vf=12 V RL=1 kW tff=30 ns VDG=VPG=5 V CL=31 pF trf=35 ns VSS=–2 V Ta=25°C trfR=15 ns This Material Copyrighted By Its Respective Manufacturer 7/10 IMAGE SENSORS OPA256C–1 Output Timing Diagrams tff=30 ns trf=35 ns 90% 50% f1A.f2B 10% trf=R15 ns 90% 50% 10% fR tdrv tdfv 10% Video 90% trv tfv TYPICAL CHARACTERISTICS • Iluminance vs. Output Characteristics 1000 ffR=1 MHz RL=1 kW 2856K tungsten lamp Room temperature 200 100 50 m s 20 2 1 VRD=12 V Vf1.2, fT, fR=12 V VOG=5 V VPG=5 V VSS=–2.0 V t= 1 10 5 Tin Output Voltage (mV) 500 1 2 5 10 20 50 100 200 500 1000 Illuminance (Rx) This Material Copyrighted By Its Respective Manufacturer 8/10 IMAGE SENSORS OPA256C–1 • Spectral Sensitivity Characteristic Relative Output 1.0 VRD=12 V VOG=5 V VPG=5 V VSS=–2.0 V VfR=12 V 0.5 0.2 0.1 200 400 600 800 1000 1200 Wavelength (nm) • Dark vs. Temperature Characteristics 500 200 ffR=1 MHz VRD=12 V f1, 2, fR, fT=12 V VOG=5 V VPG=5 V VSS=–2 V RL=1 kW 100 m s Tin t= 10 m s 50 20 Tin t= 25 Dark Current Output ¥100(%) Saturation Output 1000 10 5 2 1 0 , 10 20 30 40 50 60 70 80 90 100 Ambient Temperature Ta (°C) • M.T.F. Characteristics (White Fluorescent Lamp) M.T.F(%) 80 60 40 Continuous input 20 1 2 This Material Copyrighted By Its Respective Manufacturer 3 5 Relaitive Output Single pulse (Black) input1 0 Max. Min. Black White Black White Black Sensor bit MTF=(Max.–Min.) / (Max.+Min.) ¥100 (%) 10 100 ¥7.7(Line pair/mm) 9/10 +5 0.01 6.8 5.1K 5.1K 6.8 +5V 0.01 100 6.8 0.01 200 6.8 200 0.01 RD78N RD13BL RD13BL 5K 5.1K ID LCO IB IB IA T CL f ID LCO IB IB IA T CL f ID LCO IB IB IA T CL f ID LCO IB IB IA T CL f ID LCO IB IB 74163 IA T CL f +5V f +5V fT fT JK +5V R Q f1A f1B Q f2A f2B 2K RD OD TP2 TP4 CS 2SC372 +5V 1K 500 1S2075K IK 5.1K 100K 0.01 5.1K 2SC169 OS J R K Q 10P – + 300 2SC372 + Im – TP1.3 VSS C CR 5K + Im – 750 fH 300P Analog GND 0.01 2K RD1313 +5V Digit GND 6.8 100 OPA256C-1 ID LCO IB IB IA T CL f 0.01 IMAGE SENSORS +5V 6.8 DRIVE CIRCUIT +15V +5V + – 100K mPC159A 20K 22P 18K 2.7K mA733 1.8K 5.1K IK 300 IB Q f Q 2K IA 680P 74107 +5V 74123 1.5K DS0026CN 7404 5.1K 6.8 RD78N RD138L 500 200 0.01 6.8 10/10 OPA256C–1 –15V