Product Bulletin OP230WPS March 2001 Hermetic Point Source Infrared Emitting Diode Type OP230WPS Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) • Point source irradiance pattern • Wavelength matched to silicon’s peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Peak Forward Current (2 µs pulse width, 0.1% duty cycle). . . . . . . . . . . . . . . . . . 1.0 A Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . -55°C to +125°C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C(1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW(2) response • Fast switching speed • TO-46 package style with flat window Description The OP230WPS is an 850 nm, top surface emitting, IRED. The .004” emitting area centered under a nondistorting flat lens can be used in many applications where external lensing is desired. NOTES: (1) RMA flux is recommended. Duration can be ex tended to 10 seconds maximum when flow soldering. (2) Derate linearly 2.0mW/°C above 25°C. (3) E e(APT) is a measurement of the average apertured radiant in cidence upon a sensing area .250” (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and .466”(11.84 mm) from the measurement surface. Ee(APT) is not necessarily uniform within the measured area. The stable VF vs. Temperature characteristic make them ideal for applications were voltage is limited (such as battery operation). The low tr /tf make them ideal for high speed operations. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 5 (972) 323-2200 Fax (972) 323-2396 Type OP230WPS Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL Ee(APT) PARAMETER MIN TYP MAX Apertured Irradiance .5 UNITS mW/cm 2 TEST CONDITIONS IF = 100 mA VF Forward Voltage 2.20 V IR Reverse Current 1.0 µA VR = 2 V λp Wavelength Peak Emission 850 nm IF = 100 mA B Spectral Bandwidth Between Half Power Points 80 nm ±45° Deg. θHP Emission Angle at Half Power Points IF = 100 mA IF = 100 mA IF = 100 mA tr Rise Time 10 ns IF(PK) = 100 mA tf Fall Time 10 ns PW = 10 µs, D.C. = 10% Typical Performance Curves Relative Radiant Intensity vs. Angular Displacement Forward VoltVoltage age vs.vs.Am bient Temperature Temperature Forward Ambient 1 1.95 0.9 0.8 1.9 0.7 1.85 I F = 40 mA Apt. = .060” Distance = 1.0” 0.6 0.5 1.8 0.4 1.75 0.3 0.2 1.7 0.1 1.65 -50 -25 C 0C 25 C 50 C 75 C 100 C 125 C 0 Te mp Temp Angular Displacement - Deg. Radiant Forward Current Radiant Intensity Intensity vs.vs. Forward Current 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 10m A 20m A 30mA 40mA 50mA 60m A 70m A 80m A 90mA 100m A IFF Optek re serves the right to make changes at any time in order to improve design and to supply the best product possi ble. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 6