Product Bulletin OP599 June 1996 NPN Plastic Silicon Phototransistors Type OP599 Series Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) • Variety of sensitivity ranges • T-1 3/4 package style Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter-Collector Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Continuous Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40o C to +100o C Lead Soldering Temperature (1/16 inch [1.6 mm] from case for 5 sec. with soldering iron). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2) Description The OP599 series phototransistor consists of an NPN silicon phototransistor mounted in a dark blue plastic injection molded shell package. The narrow receiving angle provides excellent on-axis coupling. The sensors are 100% production tested for close correlation with Optek GaAlAs emitters. Optek’s packaging process provides excellent optical and mechanical axis alignment. The shell also provides excellent optical lens surface, control of chip placement, and consistency of the outside package dimensions. Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.33 mW/o C above 25o C. (3) VCE = 5 V. Light source is an unfiltered GaAlAs emitting diode operating at peak emission wavelength of 890 nm and Ee(APT) of .25 mW/cm2. (4) This dimension is held to within ± 0.005" on the flange edge and may vary up to ± 0.020" in the area of the leads. Typical Performance Curves Typical Spectral Response Wavelength - nm Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 3-34 (972) 323-2200 Fax (972)323-2396 Types OP599 Electrical Characteristics (TA = 25oC unless otherwise noted) SYMBOL PARAMETER On-State Collector Current IC(ON) ICEO MIN TYP MAX UNITS OP599D OP599C OP599B OP599A 0.20 0.40 1.20 2.35 100 mA mA mA mA See Note (3) See Note (3) See Note (3) See Note (3) nA VCE = 10.0 V, Ee = 0 V(BR)CEO Collector-Emitter Breakdown Voltage 30 V IC = 100 µA V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 V IE = 100 µA V IC = 100 µA Ee = 0.25 mW/cm2(3) VCE(SAT) Collector Dark Current 1.95 3.85 TEST CONDITIONS Collector-Emitter Saturation Voltage 0.40 Typical Performance Curves Ee - Irradiance - mW/cm2 Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 3-35