OPTEK OP950

Product Bulletin OP950
June 1996
PIN Silicon Photodiode
Type OP950
Features
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
• Wide receiving angle
• Linear response vs. irradiance
• Fast switching time
• Side-looking package ideal for space
Reverse Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40o C to +100o C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
iron]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2)
Description
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.67 mW/o C above 25o C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
photodiode being tested.
(4) To calculate typical dark current in µA, use the formula ID = 10(0.042 TA-1.5) where TA is
ambient temperature in o C.
limited applications
The OP950 device consists of a PIN
silicon photodiode molded in a clear
epoxy package which allows spectral
response from visible to infrared light
wavelengths. The wide receiving angle
provides relatively even reception over a
large area. The side-looking package is
designed for easy PC board mounting.
This photodiode is mechanically and
spectrally matched to Optek’s GaAs and
GaAlAs series of infrared emitting
diodes.
Typical Performance Curves
Relative Response vs.
Wavelength
VR = 5 V
IF = 20 mA
λ- Wavelength - nm
Optek Technology, Inc.
1215 W. Crosby Road
Coupling Characteristics
OP950 and OP240
Carrollton, Texas 75006
3-58
Distance Between Lens Tips - inches
(972) 323-2200
Fax (972) 323-2396
Type OP950
Electrical Characteristics (TA = 25o C unless otherwise noted)
SYMBOL
PARAMETER
IL
Reverse Light Current
ID
Reverse Dark Current
V(BR)
Reverse Breakdown Voltage
MIN TYP
8
1
MAX UNITS
TEST CONDITIONS
18
µA
VR = 5 V, Ee = 1 mW/cm2(3)
60
nA
VR = 30 V, Ee = 0
V
IR = 100 µA
60
VF
Forward Voltage
V
IF = 1 mA
CT
Total Capacitance
4
1.2
pF
VR = 20 V, Ee = 0, f = 1.0 MHz
tr, tf
Rise Time, Fall Time
5
ns
VR = 20 V, λ = 850 nm, RL = 50 Ω
Typical Performance Curves
Normalized Light Current vs
Reverse Voltage
Total Capacitance vs
Reverse Voltage
TA = 25o C
Ee = 0 mW/cm2
f = 1 MHz
Normalized Light and Dark
Current vs Ambient Temperature
VR = 5 V
λ= 935 nm
Normalized
to
TA = 25o C
Light Current
TA = 25o C
λ= 935 nm
Normalized to VR = 5 V
Dark Current
VR - Reverse Voltage - V
VR - Reverse Voltage - V
Light Current vs. Irradiance
Switching Time Test Circuit
TA - Ambient Temperature - oC
Light Current vs. Angular
Displacement
VR = 5 V
TA = 25o C
λ= 935 nm
Test Conditions:
λ= 935 nm
VR = 5 V
Distance Lens to
Lens = 1.5 inches
Ee - Irradiance - mW/cm2
θ - Angular Displacement - Deg.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
3-59