VTB Process Photodiodes VTB8440B, 8441B PACKAGE DIMENSIONS inch (mm) CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response. Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB8440B SYMBOL CHARACTERISTIC UNITS Min. ISC TC ISC VOC TC VOC ID RSH TC RSH CJ Max. Open Circuit Voltage H = 100 fc, 2850 K 420 420 mV VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/°C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .07 1.4 GΩ RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/°C Junction Capacitance H = 0, V = 0 1.0 1.0 nF VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. 4 Typ. 2850 K Spectral Response - Peak 5 Min. H = 100 fc, 2850 K Spectral Application Range D* Max. ISC Temperature Coefficient λp 4 Typ. Short Circuit Current λrange NEP VTB8441B TEST CONDITIONS .02 .08 5 2000 330 720 40 ±50 .08 100 330 580 2 µA .02 2 720 %/°C pA nm 580 nm 40 V ±50 Degrees Noise Equivalent Power 1.1 x 10 -13 (Typ.) 2.4 x 10 -14 (Typ.) W ⁄ Hz Specific Detectivity 2.2 x 10 12 (Typ.) 9.7 x 10 12 (Typ.) cm Hz / W PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 42