GaAlAs Infrared Emitting Diodes VTE1285 T-1¾ (5 mm) Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 µs Fall: 1.0 µs Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) -40°C to 100°C 200 mW 2.86 mW/°C 100 mA 1.43 mA/°C 2.5 A -.8%/°C 5.0V 10 µA 880 nm 23 pF 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee Half Power Beam Angle Radiant Intensity Total Power Test Current VF Ie PO IFT @ IFT Volts Typ. Max. 1.5 2.0 Condition mW/cm2 VTE1285 Forward Drop distance Diameter mW/sr mW Min. Typ. mm mm Min. Typ. mA (Pulsed) 3.0 5.5 36 6.4 39 20 100 θ1/2 Typ. ±8° Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 117