VTP Process Photodiodes VTP8551 PACKAGE DIMENSIONS inch (mm) CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. These diodes exhibit low dark current under reverse bias and fast speed of response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 85°C -40°C to 85°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP8551 SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. ISC Max. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 350 mV VOC Temperature Coefficient 2850 K -2.0 mV/°C Dark Current H = 0, VR = 10 V RSH Shunt Resistance H = 0, V = 10 mV TC ISC VOC TC VOC ID CJ Junction Capacitance H = 0, V = 3 V Re Responsivity 940 nm SR Sensitivity @ Peak 50 Typ. 70 µA .20 %/°C 30 .15 nA GΩ 50 pF A/(W/cm2) .05 .55 A/W λrange Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. ±50 Degrees NEP Noise Equivalent Power 1.8 x 10-13 (Typ.) W ⁄ Hz Specific Detectivity 1.5 x 10 12 (Typ.) cm Hz / W D* 400 33 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA 1150 nm 925 nm 140 V Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 63