DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS516 High-speed diode Product specification 1998 Aug 31 Philips Semiconductors Product specification High-speed diode BAS516 FEATURES PINNING • Ultra small plastic SMD package PIN • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. 1 cathode 2 anode handbook, halfpage1 APPLICATIONS • High-speed switching in e.g. surface mounted circuits. DESCRIPTION 2 Top view DESCRIPTION The BAS516 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 (SC79) SMD plastic package. MAM408 Marking code: 6. Fig.1 Simplified outline (SOD523) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current CONDITIONS MIN. − MAX. 85 UNIT V − 75 V − 250 mA − 500 mA t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A − 500 mW Ts = 90 °C; note 1; see Fig.2 square wave; Tj = 25 °C prior to surge; see Fig.4 Ts = 90 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Ts is the temperature at the soldering point of the cathode tab. 1998 Aug 31 2 Philips Semiconductors Product specification High-speed diode BAS516 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage CONDITIONS MAX. UNIT see Fig.3 reverse current IF = 1 mA 715 mV IF = 10 mA 855 mV IF = 50 mA 1 V IF = 150 mA 1.25 V 30 nA VR = 75 V 1 µA VR = 25 V; Tj = 150 °C 30 µA VR = 75 V; Tj = 150 °C; 50 µA see Fig.5 VR = 25 V Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 1 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Note 1. Soldering point of the cathode tab. 1998 Aug 31 3 note 1 VALUE UNIT 120 K/W Philips Semiconductors Product specification High-speed diode BAS516 GRAPHICAL DATA MGM762 500 IF (mA) MBG382 300 handbook, halfpage handbook, halfpage IF (mA) 400 (1) (2) (3) 200 300 200 100 100 0 0 0 50 100 150 200 0 1 Ts (oC) Fig.2 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Maximum permissible continuous forward current as a function of soldering point temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents; Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1998 Aug 31 4 104 Philips Semiconductors Product specification High-speed diode BAS516 MGA884 105 IR (nA) 10 MBK881 0.6 handbook, halfpage Cd (pF) V R = 75 V 4 0.4 max 103 75 V 0.2 10 25 V 2 typ typ 10 0 100 0 T j ( o C) 0 200 4 8 12 VR (V) f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction temperature. 1998 Aug 31 Fig.6 5 Diode capacitance as a function of reverse voltage; typical values. 16 Philips Semiconductors Product specification High-speed diode BAS516 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S (1) 90% VR MGA881 input signal output signal (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time tr = 0.35 ns. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005. Fig.8 Forward recovery voltage test circuit and waveforms. 1998 Aug 31 6 t tp output signal Philips Semiconductors Product specification High-speed diode BAS516 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.7 0.5 0.35 0.25 0.2 0.1 1.3 1.1 0.9 0.7 1.7 1.5 0.15 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 1998 Aug 31 REFERENCES IEC JEDEC EIAJ SC-79 7 EUROPEAN PROJECTION ISSUE DATE 98-11-25 Philips Semiconductors Product specification High-speed diode BAS516 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Aug 31 8 Philips Semiconductors Product specification High-speed diode BAS516 NOTES 1998 Aug 31 9 Philips Semiconductors Product specification High-speed diode BAS516 NOTES 1998 Aug 31 10 Philips Semiconductors Product specification High-speed diode BAS516 NOTES 1998 Aug 31 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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