PHILIPS PDTA114

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
PDTA114TE
PNP resistor-equipped transistor
Preliminary specification
Supersedes data of 1997 Jul 14
File under Discrete Semiconductors, SC04
1998 Jul 23
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114TE
FEATURES
• Built-in bias resistor R1 (typ. 10 kΩ)
• Simplification of circuit design
• Reduces number of components
and board space.
3
handbook, 4 columns
3
R1
1
APPLICATIONS
2
1
• Especially suitable for space
reduction in interface and driver
circuit applications
2
Top view
MAM359
• Inverter circuit configurations
without use of an external resistor.
Fig.1 Simplified outline (SC-75) and symbol.
DESCRIPTION
PNP resistor-equipped transistor in
an SC-75 plastic package.
NPN complement: PDTC114TE.
MARKING
1
PINNING
2
PIN
DESCRIPTION
1
base/input
2
emitter/ground (+)
3
collector/output
TYPE
NUMBER
3
MARKING
CODE
PDTA114TE
11
MGA893 - 1
Fig.2
Equivalent inverter
symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
−
−
−50
V
−
−
−100
mA
VCEO
collector-emitter voltage
IO
output current (DC)
ICM
peak collector current
−
−
−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
−
−
150
mW
hFE
DC current gain
IC = −1 mA; VCE = −5 V
200
−
−
R1
input resistor
7
10
13
1998 Jul 23
open base
MIN.
2
kΩ
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114TE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−50
V
VEBO
emitter-base voltage
open collector
−
−5
V
IO
output current (DC)
−
−100
mA
ICM
peak collector current
−
−100
mA
Ptot
total power dissipation
−
150
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
833
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
ICEO
collector cut-off current
CONDITIONS
IE = 0; VCB = −50 V
MIN.
−
TYP.
−
MAX.
−100
UNIT
nA
IB = 0; VCE = −30 V
−
−
−1
µA
IB = 0; VCE = −30 V; Tj = 150 °C
−
−
−50
µA
nA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−
−100
IC = −5 V; IC = −1 mA
hFE
DC current gain
200
−
−
VCEsat
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
−
−
−150
mV
R1
input resistor
7
10
13
kΩ
Cc
collector capacitance
−
3
pF
1998 Jul 23
IE = ie = 0; VCB = −10 V; f = 1 MHz −
3
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114TE
MBK784
MBK783
−1
600
handbook, halfpage
handbook, halfpage
hFE
VCEsat
(1)
(V)
400
(1)
−10−1
(2)
200
(2)
(3)
(3)
0
−10−1
−1
−10
IC (mA)
−10−2
−10−1
−102
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
1998 Jul 23
4
−1
−10
IC (mA)
−102
Collector-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114TE
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
E
B
A
X
HE
v M A
3
Q
A
1
A1
2
e1
c
bp
w M B
Lp
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT416
1998 Jul 23
REFERENCES
IEC
JEDEC
EIAJ
SC-75
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114TE
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jul 23
6
Philips Semiconductors
Preliminary specification
PNP resistor-equipped transistor
PDTA114TE
NOTES
1998 Jul 23
7
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
115104/00/02/pp8
Date of release: 1998 Jul 23
Document order number:
9397 750 04122