SD101AWS-V, SD101BWS-V, SD101CWS-V Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications • These diodes are also available in the Mini-MELF case with type designations LL101A to LL101C, in the DO-35 case with type- designations SD101A to SD101C and in the SOD-123 case with type designations SD101AW-V to SD101CW-V. • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 20145 Mechanical Data Case: SOD-323 Weight: approx. 4.3 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part Ordering code Type Marking Remarks SD101AWS-V SD101AWS-V-GS18 or SD101AWS-V-GS08 SA Tape and Reel SD101BWS-V SD101BWS-V-GS18 or SD101BWS-V-GS08 SB Tape and Reel SD101CWS-V SD101CWS-V-GS18 or SD101CWS-V-GS08 SC Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Value Unit SD101AWS-V VRRM 60 V SD101BWS-V VRRM 50 V SD101CWS-V VRRM 40 V Ptot 1501) mW Forward continuous current IF 30 mA Maximum single cycle surge IFSM 2 A Peak inverse voltage Power dissipation (Infinite Heat Sink) 1) 10 µs square wave Valid provided that electrodes are kept at ambient temperature Document Number 85680 Rev. 1.7, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 SD101AWS-V, SD101BWS-V, Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 6501) K/W Tj 1251) °C Tstg - 65 to + 150 °C Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition IR = 10 µA Reverse breakdown voltage Leakage current Symbol Min V(BR) 60 Max Unit V SD101BWS-V V(BR) 50 V 40 SD101CWS-V VR = 50 V SD101AWS-V IR 200 nA VR = 40 V SD101BWS-V IR 200 nA VR = 30 V SD101CWS-V IR 200 nA SD101AWS-V VF 410 mV SD101BWS-V VF 400 mV SD101CWS-V VF 390 mV SD101AWS-V VF 1000 mV SD101BWS-V VF 950 mV SD101CWS-V VF 900 mV SD101AWS-V CD 2.0 ns SD101BWS-V CD 2.1 ns SD101CWS-V CD 2.2 ns trr 1 ns Forward voltage drop IF = 15 mA VR = 0 V, f = 1 MHz IF = IR = 5 mA, recover to 0.1 IR Reverse recovery time Typ. V(BR) IF = 1 mA Junction capacitance Part SD101AWS-V V Typical Characteristics Tamb = 25 °C, unless otherwise specified 100 A B C I F - Forward Current (mA) I F - Forward Current (mA) 10 1 0.1 0.01 0 18477 0.2 0.4 0.6 0.8 Figure 1. Typical Variation of Forward Current vs. Forward Voltage www.vishay.com 2 80 60 40 20 0 1.0 VF - Forward Voltage (V) A B C 18478 0 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Figure 2. Typical Forward Conduction Curve For technical questions within your region, please contact one of the following: Document Number 85680 [email protected], [email protected], [email protected] Rev. 1.7, 05-Aug-10 SD101AWS-V, SD101BWS-V, Vishay Semiconductors 2.0 CD - Typical Capacitance (pF) I R - Reverse Current (µA) 100 125 °C 10 100 °C 75 °C 1 50 °C 0.1 25 °C 0.01 0 10 20 30 40 VR - Reverse Voltage (V) 18479 1.4 1.2 A 1.0 C 0.6 0.4 0.2 0 10 20 30 40 50 VR - Reverse Voltage (V) 18480 Figure 3. Typical Variation of Reverse Current at Various Temperatures B 0.8 0 50 T j = 25 °C 1.8 1.6 Figure 4. Typical Capacitance Curve as a Function of Reverse Voltage 0.1 (0.004) max. 0° to 8 ° 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 1.15 (0.045) Package Dimensions in millimeters (inches): SOD-323 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) 2.50 (0.098) 1.1 (0.043) 2.85 (0.112) 1.5 (0.059) 0.20 (0.008) 0.40 (0.016) Cathode bar Foot print recommendation: Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 Document Number 85680 Rev. 1.7, 05-Aug-10 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 SOD323 Vishay Semiconductors 0.1 (0.004) max. 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 0° - 8° 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) Mounting pad layout 0.6 (0.024) 1.1 (0.043) 2.85 (0.112) 2.50 (0.098) 1.5 (0.059) 0.40 (0.016) 0.20 (0.008) Cathode bar 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 1.15 (0.045) PACKAGE DIMENSIONS in millimeters (inches) Created - Date: 24. August. 2004 Rev. 04 - Date: 23. Sep .2009 Document no.: S8-V-3910.02-001 (4) 17443 www.vishay.com 24 For technical questions, contact: [email protected] Document Number: 84018 Rev. 1.3, 12-Jan-07 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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