TIC126 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 2000, Power Innovations Limited, UK ● 12 A Continuous On-State Current ● 100 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 20 mA APRIL 1971 - REVISED JUNE 2000 TO-220 PACKAGE (TOP VIEW) K 1 A 2 G 3 Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL TIC126D Repetitive peak off-state voltage Repetitive peak reverse voltage TIC126M TIC126S VALUE VDRM 600 700 TIC126N 800 TIC126D 400 TIC126M TIC126S UNIT 400 VRRM 600 700 V V 800 TIC126N IT(RMS) 12 A IT(AV) 7.5 A Surge on-state current at (or below) 25°C case temperature (see Note 3) ITM 100 A Peak positive gate current (pulse width ≤ 300 µs) IGM 3 A W Continuous on-state current at (or below) 70°C case temperature (see Note 1) Average on-state current (180° conduction angle) at (or below) 70°C case temperature (see Note 2) Peak gate power dissipation (pulse width ≤ 300 µs) PGM 5 PG(AV) 1 W Operating case temperature range TC -40 to +110 °C Storage temperature range Tstg -40 to +125 °C TL 230 °C Average gate power dissipation (see Note 4) Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C. 2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate linearly to zero at 110°C. 3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 4. This value applies for a maximum averaging time of 20 ms. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM IRRM IGT TEST CONDITIONS Repetitive peak MAX UNIT TC = 110°C 2 mA IG = 0 TC = 110°C 2 mA VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs 20 mA VAA = 12 V RL = 100 Ω TC = - 40°C VD = rated VDRM off-state current Repetitive peak VR = rated VRRM reverse current Gate trigger current MIN TYP 8 2.5 tp(g) ≥ 20 µs VGT Gate trigger voltage VAA = 12 V RL = 100 Ω 0.8 tp(g) ≥ 20 µs VAA = 12 V RL = 100 Ω TC = 110°C tp(g) ≥ 20 µs VAA = 12 V IH TC = - 40°C 100 mA VAA = 12 V 40 Initiating IT = 100 mA VT dv/dt NOTE On-state voltage Critical rate of rise of off-state voltage V 0.2 Initiating IT = 100 mA Holding current 1.5 IT = 12 A (see Note 5) VD = rated VD IG = 0 1.4 TC = 110°C 400 V V/µs 5: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER 2.4 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W PRODUCT 2 INFORMATION MIN TYP TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 THERMAL INFORMATION MAX ANODE POWER LOSS vs ON-STATE CURRENT AVERAGE ON-STATE CURRENT DERATING CURVE TI03AE PA - Max Continuous Anode Power Dissipated - W IT(AV) - Maximum Average On-State Current - A 16 14 Continuous DC 12 10 Φ = 180º 8 6 4 0° 180° Φ Conduction 2 Angle 0 30 40 50 60 70 80 90 100 110 TI03AF 100 TJ = 110°C 10 1 0·1 0·1 TC - Case Temperature - °C 100 IT - Continuous On-State Current - A Figure 2. SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION TI03AG 10 TC ≤ 70°C No Prior Device Conduction Gate Control Guaranteed 1 10 100 Consecutive 50 Hz Half-Sine-Wave Cycles Figure 3. PRODUCT TI03AH 10 Rθ JC(t) - Transient Thermal Resistance - °C/W ITM - Peak Half-Sine-Wave Current - A 10 Figure 1. 100 1 1 1 0.1 1 10 100 Consecutive 50 Hz Half-Sine-Wave Cycles Figure 4. INFORMATION 3 TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 TYPICAL CHARACTERISTICS GATE TRIGGER VOLTAGE vs GATE TRIGGER CURRENT vs CASE TEMPERATURE CASE TEMPERATURE TC03AA TC03AB 1 RL = 100 Ω tp(g) ≥ 20 µs VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA VAA = 12 V 10 0·8 0·6 0·4 VAA =12 V 0·2 1 -50 -25 0 25 50 75 100 0 -50 125 RL = 100 Ω tp(g) ≥ 20 µs -25 0 25 75 100 125 TC - Case Temperature - °C TC - Case Temperature - °C Figure 5. Figure 6. PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT HOLDING CURRENT vs CASE TEMPERATURE 100 TC03AD 10 TC03AH 2·5 VTM - Peak On-State Voltage - V VAA = 12 V Initiating IT = 100 mA IH - Holding Current - mA 50 TC = 25 °C tp = 300 µs 2 Duty Cycle ≤ 2 % 1·5 1 0·5 1 -50 -25 0 25 50 75 100 125 TC - Case Temperature - °C Figure 7. PRODUCT 4 INFORMATION 0 0·1 1 10 ITM - Peak On-State Current - A Figure 8. 100 TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO-220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 6,6 6,0 15,32 14,55 18,0 TYP. 6,1 5,6 1,47 1,07 0,97 0,66 1 2 14,1 12,7 3 2,74 2,34 5,28 4,68 0,64 0,41 2,90 2,40 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT INFORMATION 5 TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 2000, Power Innovations Limited PRODUCT 6 INFORMATION