TIP135, TIP136, TIP137 PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK ● JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with TIP130, TIP131 and TIP132 TO-220 PACKAGE (TOP VIEW) ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current B 1 ● Minimum hFE of 1000 at 4 V, 4 A C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL TIP135 Collector-base voltage (IE = 0) TIP136 Emitter-base voltage Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V -60 VCEO TIP137 Continuous collector current -80 -100 TIP135 TIP136 UNIT -60 VCBO TIP137 Collector-emitter voltage (IB = 0) VALUE -80 V -100 V EBO -5 V IC -8 A ICM -12 A IB -0.3 A Ptot 70 W Ptot 2 W ½LIC 2 75 mJ °C Tj -65 to +150 Tstg -65 to +150 °C TL 260 °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP135, TIP136, TIP137 PNP SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER V (BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE Cobo VEC TEST CONDITIONS Collector-emitter breakdown voltage Collector-emitter cut-off current MIN TIP135 IC = -30 mA IB = 0 (see Note 5) TYP MAX TIP136 -80 TIP137 -100 V VCE = -30 V IB = 0 TIP135 -0.5 V CE = -40 V IB = 0 TIP136 -0.5 V CE = -50 V IB = 0 TIP137 -0.5 VCB = -60 V IE = 0 TIP135 -0.2 V CB = -80 V IE = 0 TIP136 -0.2 Collector cut-off V CB = -100 V IE = 0 TIP137 -0.2 current V CB = -60 V IE = 0 TC = 100°C TIP135 -1 V CB = -80 V IE = 0 TC = 100°C TIP136 -1 V CB = -100 V IE = 0 TC = 100°C TIP137 -1 VEB = IC = 0 Emitter cut-off current -5 V Forward current VCE = -4 V IC = -1 A transfer ratio V CE = -4 V IC = -4 A Collector-emitter IB = -16 mA IC = -4 A saturation voltage IB = -30 mA IC = -6 A VCE = IC = -4 A Base-emitter voltage Output capacitance Parallel diode forward voltage -4 V VCB = -10 V IE = 0 IE = IB = 0 -8 A -5 (see Notes 5 and 6) UNIT -60 mA mA mA 500 1000 15000 -2 (see Notes 5 and 6) -3 (see Notes 5 and 6) (see Notes 5 and 6) V -2.5 V 200 pF -3.5 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER 1.78 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W PRODUCT 2 INFORMATION MIN TYP TIP135, TIP136, TIP137 PNP SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS135AA 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = -4 V t p = 300 µs, duty cycle < 2% 100 -0·5 -1·0 -10 TCS135AB -2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 -1·5 -1·0 TC = -40°C TC = 25°C TC = 100°C -0·5 -0·5 IC - Collector Current - A -1·0 -10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS135AC VBE(sat) - Base-Emitter Saturation Voltage - V -3·0 -2·5 TC = -40°C TC = 25°C TC = 100°C -2·0 -1·5 -1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 -10 IC - Collector Current - A Figure 3. PRODUCT INFORMATION 3 TIP135, TIP136, TIP137 PNP SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -10 SAS135AB -1·0 -0·1 TIP135 TIP136 TIP137 -0.01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 TC - Case Temperature - °C Figure 5. PRODUCT 4 INFORMATION 125 150 TIP135, TIP136, TIP137 PNP SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT 5 INFORMATION MDXXBE TIP135, TIP136, TIP137 PNP SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT 6 INFORMATION