POINN TIPL761C

TIPL761B, TIPL761C
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
MAY 1989 - REVISED MARCH 1997
●
Rugged Triple-Diffused Planar Construction
●
4 A Continuous Collector Current
●
Operating Characteristics Fully Guaranteed
at 100°C
B
1
●
1200 Volt Blocking Capability
C
2
●
100 W at 25°C Case Temperature
E
3
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (V BE = 0)
Collector-emitter voltage (IB = 0)
SYMBOL
TIPL761B
TIPL761C
TIPL761B
TIPL761C
TIPL761B
TIPL761C
Emitter-base voltage
Continuous collector current
VCBO
VCES
VCEO
VALUE
1100
1200
1100
1200
500
550
UNIT
V
V
V
V EBO
10
V
IC
4
A
Peak collector current (see Note 1)
ICM
8
A
Continuous device dissipation at (or below) 25°C case temperature
Ptot
100
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIPL761B, TIPL761C
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V CEO(sus)
ICES
ICEO
IEBO
hFE
VCE(sat)
V BE(sat)
ft
Cob
TEST CONDITIONS
Collector-emitter
sustaining voltage
IC =
10 mA
L = 25 mH
MIN
(see Note 2)
TIPL761B
500
TIPL761C
550
TYP
MAX
V
VCE = 1100 V
VBE = 0
TIPL761B
Collector-emitter
V CE = 1200 V
VBE = 0
TIPL761C
50
cut-off current
V CE = 1100 V
VBE = 0
TC = 100°C
TIPL761B
200
TC = 100°C
50
V CE = 1200 V
VBE = 0
TIPL761C
200
Collector cut-off
VCE = 500 V
IB = 0
TIPL761B
50
current
V CE = 550 V
IB = 0
TIPL761C
50
VEB =
10 V
IC = 0
VCE =
5V
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
1
IC = 0.5 A
(see Notes 3 and 4)
UNIT
20
µA
µA
mA
60
IB =
0.4 A
IC =
2A
IB =
0.6 A
IC =
3A
(see Notes 3 and 4)
1.0
2.5
IB =
0.6 A
IC =
3A
TC = 100°C
5.0
IB =
0.4 A
IC =
2A
IB =
0.6 A
IC =
3A
(see Notes 3 and 4)
1.4
IB =
0.6 A
IC =
3A
TC = 100°C
1.3
VCE =
10 V
IC = 0.5 A
f=
VCB =
20 V
IE = 0
f = 0.1 MHz
V
1.2
1 MHz
V
12
MHz
110
pF
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
1.25
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
†
†
MAX
UNIT
tsv
Voltage storage time
2.5
µs
trv
Voltage rise time
300
ns
tfi
Current fall time
tti
Current tail time
txo
Cross over time
tsv
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
txo
Cross over time
IC = 3 A
V BE(off) = -5 V
IB(on) = 0.6 A
IC = 3 A
IB(on) = 0.6 A
V BE(off) = -5 V
TC = 100°C
MIN
(see Figures 1 and 2)
(see Figures 1 and 2)
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
TEST CONDITIONS
INFORMATION
TYP
250
ns
150
ns
400
ns
3
µs
500
ns
250
ns
150
ns
750
ns
TIPL761B, TIPL761C
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
33 Ω
+5V
D45H11
BY205-400
33 Ω
BY205-400
RB
(on)
1 pF
V Gen
180 µ H
2N2222
1 kΩ
68 Ω
0.02 µ F
vcc
BY205-400
Vclamp = 400 V
TUT
1 kΩ
+5V
270 Ω
BY205-400
5X BY205-400
1 kΩ
2N2904
Adjust pw to obtain IC
D44H11
47 Ω
For IC < 6 A
VCC = 50 V
For IC ≥ 6 A
VCC = 100 V
V
100 Ω
BE(off)
Figure 1. Inductive-Load Switching Test Circuit
I B(on)
A (90%)
IB
A - B = tsv
Base Current
B - C = trv
D - E = tfi
E - F = tti
C
B - E = txo
V
CE
B
90%
10%
Collector Voltage
D (90%)
E (10%)
I
C(on)
Collector Current
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.
B. Resistors must be noninductive types.
Figure 2. Inductive-Load Switching Waveforms
PRODUCT
INFORMATION
3
TIPL761B, TIPL761C
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCP741AA
100
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TC = 125°C
TC = 25°C
TC = -65°C
VCE = 5 V
10
1·0
0·1
TCP741AB
5·0
TC = 25°C
TC = 100°C
4·0
IC = 4 A
IC = 3 A
IC = 2 A
IC = 1 A
3·0
2·0
1·0
0
1·0
10
0
0·5
IC - Collector Current - A
1·0
Figure 4.
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
TCP741AC
1·25
TCP741AN
10
TC = 25°C
ICES - Collector Cut-off Current - µA
VBE(sat) - Base-Emitter Saturation Voltage - V
2·0
IB - Base Current - A
Figure 3.
1·15
1·05
0·95
IC = 4 A
IC = 3 A
IC = 2 A
IC = 1 A
0·85
0·75
0
0·2
0·4
0·6
0·8
1·0
1·2
1·4
IB - Base Current - A
Figure 5.
PRODUCT
4
1·5
INFORMATION
1·6
1·0
TIPL761C
VCE = 1200 V
0·1
TIPL761B
VCE = 1100 V
0·01
0·001
-60
-30
0
30
60
TC - Case Temperature - °C
Figure 6.
90
120
TIPL761B, TIPL761C
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAP741AC
IC - Collector Current - A
10
1·0
0.1
10 µs
tp =
tp = 100 µs
tp =
1 ms
tp = 10 ms
DC Operation
0·01
1·0
TIPL761B
TIPL761C
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 7.
THERMAL INFORMATION
Zθ JC/Rθ JC - Normalised Transient Thermal Impedance
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
TCP741AE
1·0
50%
20%
10%
0·1 5%
0%
duty cycle = t1/t2
Read time at end of t1,
TJ(max) - TC = P D(peak) ·
0·01
10-5
10-4
10 -3
t1
t2
( )
10 -2
ZθJC
Rθ JC
· RθJC(max)
10-1
10 0
t1 - Power Pulse Duration - s
Figure 8.
PRODUCT
INFORMATION
5
TIPL761B, TIPL761C
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
15,2
14,7
4,1
4,0
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
2
3
1,30
0,78
0,50
1,10
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
PRODUCT
6
INFORMATION
MDXXAW
TIPL761B, TIPL761C
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
INFORMATION
7