TISP2310L DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK FEBRUARY 1990 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION ● Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘2310L V(Z) V(BO) V V 250 310 ● Planar Passivated Junctions Low Off-State Current < 10 µA ● Rated for International Surge Wave Shapes WAVE SHAPE STANDARD 8/20 µs ANSI C62.41 A 150 10/160 µs FCC Part 68 60 10/560 µs FCC Part 68 45 0.2/310 µs RLM 88 38 FTZ R12 50 10/700 µs VDE 0433 50 CCITT IX K17/K20 50 REA PE-60 50 10/1000 µs ● ITSP device symbol UL Recognized, E132482 description The TISP2310L is designed specifically for telephone equipment protection against lightning and transients induced by a.c. power lines. These devices will supress voltage transients between terminals A and C, B and C, and A and B. Transients are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides. PRODUCT These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TISP2310L DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS FEBRUARY 1990 - REVISED SEPTEMBER 1997 absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 150 10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 ITSP 0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) A 38 5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45 10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs) 50 Non-repetitive peak on-state current, 50 Hz, 0.7 s (see Notes 1 and 2) ITSM 10 A rms Initial rate of rise of on-state current, diT/dt 250 A/µs TJ 150 °C 0 to 70 °C Linear current ramp, Maximum ramp value < 38 A Junction temperature Operating free - air temperature range Storage temperature range Tstg -40 to +150 °C Lead temperature 1.5 mm from case for 10 s Tlead 260 °C NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature 2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has returned to thermal equilibrium. 3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting loaded current waveform is specified. . electrical characteristics for the A and B terminals, TJ = 25°C PARAMETER VZ ID Coff NOTE TEST CONDITIONS Reference zener MIN IZ = ± 1mA voltage Off-state leakage TYP ± 250 Off-state capacitance VD = 0 f = 1 kHz (see Note 4) UNIT V VD = ± 50 V current MAX 40 ± 10 µA 100 pF 4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is connected to the guard terminal of the bridge. electrical characteristics for the A and C or the B and C terminals, TJ = 25°C PARAMETER VZ ∝ VZ TEST CONDITIONS Reference zener IZ = ± 1mA voltage Breakover voltage (see Notes 5 and 6) I(BO) Breakover current (see Note 5) VTM Peak on-state voltage IT = ± 5 A Holding current (see Note 5) dv/dt ID Coff off-state voltage Off-state leakage current Off-state capacitance MAX %/oC ± 310 ± 0.15 ± 2.2 (see Notes 5 and 6) UNIT V 0.1 of reference voltage Critical rate of rise of TYP ± 250 Temperature coefficient V(BO) IH MIN V ± 0.6 A ± 3 V ± 150 mA (see Note 7) ± 5 kV/µs VD = ± 50 V ± 10 µA 200 pF VD = 0 f = 1 kHz (see Note 4) 110 NOTES: 5. These parameters must be measured using pulse techniques, tw = 100 µs, duty cycle ≤ 2%. 6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm (0.125 inch) from the device body. 7. Linear rate of rise, maximum voltage limited to 80 % VZ (minimum).. PRODUCT 2 INFORMATION TISP2310L DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS FEBRUARY 1990 - REVISED SEPTEMBER 1997 PARAMETER MEASUREMENT INFORMATION Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS The high level characteristics for terminals A and B are not guaranteed. thermal characteristics PARAMETER RθJA Junction to free air thermal resistance PRODUCT MIN TYP MAX UNIT 100 °C/W INFORMATION 3 TISP2310L DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS FEBRUARY 1990 - REVISED SEPTEMBER 1997 MECHANICAL DATA SOT-82 3-pin plastic single-in-line package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-82 2,7 2,4 7,8 7,4 10,8 10,5 Exposed Heat Slug 2,54 typ 0,9 0,7 15,7 typ 1 2 3 0,75 0,49 2,2 typ 4,4 typ 1,2 typ ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the heat slug. PRODUCT 4 INFORMATION MDXXAQ TISP2310L DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS FEBRUARY 1990 - REVISED SEPTEMBER 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 5