polyfet rf devices F1027 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance 200 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 440 Watts Maximum Junction Temperature 0.4 o C/W 200 o C Storage Temperature DC Drain Current -65 o C to 150o C 24 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 30V 70 V RF CHARACTERISTICS ( 200 WATTS OUTPUT ) SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficienc VSWR MIN TYP MAX 10 60 Load Mismatch Toleranc 20:1 UNITS TEST CONDITIONS dB Idq = 2.4 A, Vds = 28.0 V, F = 175 MHz % Idq = 2.4 A, Vds = 28.0 V, F = 175 MHz Relative Idq = 2.4 A, Vds = 28.0 V, F = 175 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX Bvdss Drain Breakdown Voltag 65 Idss Zero Bias Drain Curren 6 Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc Rdson Saturation Resistanc Idsat Saturation Curren Ciss Common Source Input Capacitanc Crss Common Source Feedback Capacitanc Coss Common Source Output Capacitanc UNITS V 1 TEST CONDITIONS Ids = 0.3 A, Vgs = 0V mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.6 A, Vgs = Vds 4.8 Mho Vds = 10V, Vgs = 5V 0.18 Ohm Vgs = 20V, Ids = 24 A 33 Amp Vgs = 20V, Vds = 10V 198 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz 24 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz 120 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1027 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1027 PIN VS POUT F=175 MHZ; IDQ=2.4A; VDS=28.0V F1B 6 DICE CAPACITANCE 19 300 1000 18 250 17 POUT 200 16 Ciss GAIN Coss 15 150 100 14 13 100 Crss 12 50 11 10 0 0 2 4 6 8 10 12 14 16 18 10 20 0 5 10 PIN IN WATTS 15 20 25 30 VDS IN VOLTS IV CURVE ID AND GM VS VGS F1B 6 DICE IV CURVE F1B 6 DIE GM & ID vs VG 40 100 35 Id 30 25 10 20 15 10 Gm 1 5 0 0 2 4 6 8 10 12 14 16 18 20 0.1 Vds in Volts 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V S11 AND S22 SMITH CHART Vg = 10V 2 Vg = 12V 4 6 8 10 12 14 Vgs in Volts PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com