POLYFET P122

polyfet rf devices
P122
PATENTED GOLD METALLIZED
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
1.0 Watts Single Ended
Package Style SOT 223
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T C= 25 C )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
2 Watts
o
26.00 C/W
Maximum
Junction
Temperature
o
200 C
DC Drain
Current
Storage
Temperature
o
o
-65 C to 150 C
RF CHARACTERISTICS (
SYMBOL
Gps
η
VSWR
PARAMETER
MIN
Common Source Power Gain
TYP
0.8 A
MAX
50
Load Mismatch Tolerance
Drain to
Source
Voltage
Gate to
Source
Voltage
50 V
50 V
30 V
1.0 WATTS OUTPUT )
10
Drain Efficiency
Drain to
Gate
Voltage
20:1
UNITS
TEST CONDITIONS
dB
Idq = 0.20 A, Vds = 12.5 V, F = 1,000 MHz
%
Idq = 0.20 A, Vds = 12.5 V, F = 1,000 MHz
Relative Idq = 0.20 A, Vds = 12.5 V, F = 1,000 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL
PARAMETER
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
Igss
Gate Leakage Current
Vgs
Gate Bias for Drain Current
gM
Forward Transconductance
Rdson
MIN
TYP
MAX
TEST CONDITIONS
V
Ids = 0.01 A, Vgs = 0V
0.2
mA
Vds = 12.5 V, Vgs = 0V
1
uA
Vds = 0V Vgs = 30V
7
V
Ids = 0.02 A, Vgs = Vds
40
1
UNITS
0.2
Mho
Vds = 10V, Vgs = 5V
Saturation Resistance
2.00
Ohm
Vgs = 20V, Ids = 1.60 A
Idsat
Saturation Current
2.30
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitance
7.5
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
1.2
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
8.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 06/19/2000
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
P122
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F2C 1 DIE CAPACITANCE
100
10
Coss
Ciss
Crss
1
0
5
10
15
20
25
30
VDS IN VOLTS
IV CURVE
ID & GM VS VGS
F2C I DIE IV CURVE
F2C 1 DIE GM & ID vs VGS
10
2.5
2
Id
1
1.5
1
Gm
0.1
0.5
0
0
2
4
6
8
10
12
14
16
0.01
Vds in Volts
0
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
2
Vg = 12V
4
6
8
10
12
14
Vgs in Volts
S11 & S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 06/19/2000
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com