VISHAY TSDF52830YS

TSDF52830YS
VISHAY
Vishay Semiconductors
Dual - MOSMIC®- two AGC Amplifiers for TV-Tuner Prestage
with Integrated Band Switch for One-Line Switching
Comments
6
5
4
MOSMIC - MOS Monolithic Integrated Circuit
VY
CW
Description
The Dual-MOSMIC® TSDF52830YS, assembled in
the well-known SOT-363 plastic package, is a combination of two different MOSMIC® amplifiers with common Source and common Gate 2 leads and an
integrated switch. One of the MOSMIC stages is optimized for use in VHF applications, especially regarding cross modulation performance and noise figure at
lower VHF frequencies, whereas the other stage is
optimized for use in UHF applications regarding gain
and noise figure performance at higher frequencies of
UHF range. The integrated switch is operated by the
Gate 1 bias of the UHF amplifier on Pin 1. All of the
Gates are protected against excessive input voltage
surges by integrated antiserial diodes between themselves and Source.
WN5
1
2
3
19024
Electrostatic sensitive device.
Observe precautions for handling
Typical Application
5
AGC
C
VHF
in
RFC
G2 (common)
C
6
G1 AMP2
D
4
C
+5 V
VHF
out
Features
• Two differently optimized amplifiers in a single
package. One of them has a fully internal self-biasing network on chip and the other has a partly integrated bias for easy Gate 1 switch-off with PNP
switching transistors inside PLL -IC
• Internal switch for saving lines on PCB layout as
well as external components
• Integrated gate protection diodes
• Low noise figure, high gain
• Typical forward transadmittance of 31 mS
resp. 28 mS
• Superior cross modulation at gain reduction
• High AGC-range with soft slope
• Main AGC control range from 3 V to 0.5 V
Applications
Low noise gain controlled VHF and UHF input stages
with 5 V supply voltage, such as in digital and analog
TV tuners and in other multimedia and communications equipment.
Document Number 85178
Rev. 1.1, 26-Aug-04
RFC
RG1
V GG
UHF
in
C
AMP1
1
G1
D
3
C
+5 V
UHF
out
S (common)
2
19025
V GG = 5 V: UHF AMP is on; VHF AMP is off
V GG = 0 V: UHF AMP is off; VHF AMP is on
(0 = shorted to Ground or open)
Mechanical Data
Case: SOT-363 Plastic case
Weight: approx. 6.0 mg
V - Vishay
Y - Year, is variable for digit from 0 to 9
(e.g. 3 = 2003, 4 = 2004)
CW - Calendar Week, is variable for
number from 01 to 52
Number of Calendar Week is always indicating
place of pin 1
Pinning:
1 = Gate 1 (UHF amplifier), 2 = Source (common)
3 = Drain (UHF amplifier), 4 = Drain (VHF amplifier),
5 = Gate 2 (common), 6 = Gate1 (VHF amplifier)
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TSDF52830YS
VISHAY
Vishay Semiconductors
Parts Table
Part
Marking
TSDF52830YS
Package
WN5
SOT-363
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications
Parameter
Test condition
Symbol
Value
VDS
8
V
ID
25
mA
± IG1/G2SM
10
mA
+ VG1± VG2SM
6
V
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Gate 1/Gate 2 - source voltage
Unit
- VG1SM
1.5
V
Ptot
200
mW
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Gate 1 - source voltage
Total power dissipation
Tamb ≤ 60 °C
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications
Parameter
Test condition
Drain - source voltage
Value
Unit
VDS
8
V
ID
30
mA
± IG1/G2SM
10
mA
+ VG1/± VG2SM
6
V
Drain current
Gate 1/Gate 2 - source peak
current
Gate 1/Gate 2 - source voltage
Symbol
- VG1SM
1.5
V
Ptot
200
mW
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Symbol
Value
Unit
RthChA
450
K/W
Gate 1 - source voltage
Total power dissipation
Tamb ≤ 60 °C
Maximum Thermal Resistance
Parameter
Channel ambient
1)
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
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2
Test condition
1)
Document Number 85178
Rev. 1.1, 26-Aug-04
TSDF52830YS
VISHAY
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications
Parameter
Test condition
Symbol
Min
V(BR)DSS
15
Drain - source breakdown
voltage
ID = 10 µA, VG2S = VG1S = 0
Gate 1 - source breakdown
voltage
+ IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS
7
± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS
+ IG1SS
7
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0
Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V,
RG1 = 100 kΩ
Typ.
8
Unit
V
10
± IG2SS
IDSO
Max
12
V
10
V
20
nA
20
nA
17
mA
Gate 1 - source cut-off voltage
VDS = 5 V, VG2S = 4, ID = 20 µA
VG1S(OFF)
0.3
1.0
V
Gate 2 - source cut-off voltage
VDS = VRG1 = 5 V, RG1 =100 kΩ,
ID = 20 µA
VG2S(OFF)
0.3
1.2
V
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications
Max
Unit
Gate 1 - source breakdown
voltage
Parameter
+ IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS
Test condition
Symbol
Min
7
Typ.
10
V
Gate 2 - source breakdown
voltage
± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS
7
10
V
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0
+ IG1SS
50
µA
± IG2SS
20
nA
Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V,
Gate 1 = nc
IDSP
8
17
mA
VG2S(OFF)
0.3
1.2
V
Gate 2 - source cut-off voltage
Document Number 85178
Rev. 1.1, 26-Aug-04
VDS = VRG1 = 5 V, Gate 1 = nc,
ID = 20 µA
13
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TSDF52830YS
VISHAY
Vishay Semiconductors
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Amplifier 1
VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 100 kΩ, ID = IDSO, f = 1 MHz, Tamb = 25 °C, unless otherwise specified
Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications
Symbol
Min
Typ.
Max
Unit
Forward transadmittance
Parameter
Test condition
|y21s|
27
31
35
mS
Gate 1 input capacitance
Cissg1
1.7
2.1
pF
Crss
20
Feedback capacitance
fF
Coss
0.9
pF
GS = 2 mS, BS = BSopt,
GL = 0.5 mS, BL = BLopt,
f = 200 MHz
Gps
33
dB
GS = 3.3 mS, B S = BSopt,
GL = 1 mS, BL = BLopt,
f = 400 MHz
Gps
30
dB
GS = 3.3 mS, B S = BSopt,
GL = 1 mS, BL = BLopt,
f = 800 MHz
Gps
25
dB
AGC range
VDS = 5 V, VG2S = 0.5 to 4 V,
f = 800 MHz
Gps
50
dB
Noise figure
GS = GL = 20 mS, BS = BL = 0,
f = 50 MHz
F
5.0
7.0
dB
GS = 2 mS, GL = 0.5 mS,
BS = BSopt, f = 400 MHz
F
1.0
1.5
dB
GS = 3.3 mS, GL = 1 mS,
BS = BSopt, f = 800 MHz
F
1.3
2.0
dB
Output capacitance
Power gain
Cross modulation
40
Input level for
k = 1 % @ 0 dB
AGC fw = 50 MHz,
funw = 60 MHz
Xmod
90
Input level for
k = 1 % @ 40 dB
AGC fw = 50 MHz,
funw = 60 MHz
Xmod
100
dBµV
105
dBµV
Remark on improving intermodulation behavior:
By setting RG1 smaller than 100 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed.
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Document Number 85178
Rev. 1.1, 26-Aug-04
TSDF52830YS
VISHAY
Vishay Semiconductors
Amplifier 2
VDS = VRG1 = 5 V, VG2S = 4 V, Gate 1 = nc, ID = IDSP, f = 1 MHz, Tamb = 25 °C, unless otherwise specified
Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications
Symbol
Min
Typ.
Max
Unit
Forward transadmittance
Parameter
Test condition
|y21s|
23
28
33
mS
Gate 1 input capacitance
Cissg1
2.2
2.7
pF
Crss
20
Feedback capacitance
fF
Coss
1.0
pF
GS = 2 mS, BS = BSopt,
GL = 0.5 mS, BL = BLopt,
f = 200 MHz
Gps
32
dB
GS = 2 mS, BS = BSopt,
GL = 1 mS, BL = BLopt,
f = 400 MHz
Gps
28
dB
GS = 3.3 mS, BS = BSopt,
GL = 1 mS, BL = BLopt,
f = 800 MHz
Gps
22
dB
AGC range
VDS = 5 V, VG2S = 0.5 to 4 V,
f = 200 MHz
Gps
50
dB
Noise figure
GS = GL = 20 mS, BS = BL = 0,
f = 50 MHz
F
4.5
6.0
dB
GS = 2 mS, GL = 1 mS,
BS = BSopt, f = 400 MHz
F
1.0
1.6
dB
GS = 3.3 mS, GL = 1 mS,
BS = BSopt, f = 800 MHz
F
1.5
2.3
dB
Output capacitance
Power gain
Cross modulation
Document Number 85178
Rev. 1.1, 26-Aug-04
Input level for
k = 1 % @ 0 dB
AGC fw = 50 MHz,
funw = 60 MHz
Xmod
90
dBµV
Input level for
k = 1 % @ 40 dB
AGC fw = 50 MHz,
funw = 60 MHz
Xmod
105
dBµV
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TSDF52830YS
VISHAY
Vishay Semiconductors
Package Dimensions in mm (Inches)
1.00 (0.039)
0.80 (0.031)
0.10 (0.004)
0.25 (0.010)
0.10 (0.004)
ISO Method E
10
Mounting Pad Layout
2.20 (0.087)
1.80 (0.071)
0.90 (0.035)
1.60 (0.063)
2.20 (0.087)
2.00 (0.079)
1.35 (0.053)
0.30 (0.012)
0.20 (0.009)
1.15 (0.045)
0.35 (0.014)
0.65 (0.026) Ref.
0.65 (0.026)
1.3 (0.052)
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1.30 (0.052) Ref.
14280
Document Number 85178
Rev. 1.1, 26-Aug-04
TSDF52830YS
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85178
Rev. 1.1, 26-Aug-04
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