POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE ARF674 Repetitive voltage up to Mean forward current Surge current 4500 V 945 A 15 kA FINAL SPECIFICATION feb 97 - ISSUE : 03 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 4500 V V RSM Non-repetitive peak reverse voltage 125 4600 V I RRM Repetitive peak reverse current 125 80 mA V=VRRM CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 945 A I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 940 A I FSM Surge forward current Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM 125 15 kA Forward current = 1570 25 3 V V I² t I² t V FM Forward voltage V F(TO) Threshold voltage 125 1.90 r F Forward slope resistance 125 0.700 A 1125 x1E3 A²s mohm SWITCHING t rr Reverse recovery time Q rr Reverse recovery charge I rr Peak reverse recovery current s Softness (s-factor), min V FR IF= di/dt= VR = 500 A 30 A/µs 100 V 125 8 µs 600 µC 150 A 0.4 Peak forward recovery di/dt= 400 A/µs 42 V Junction to heatsink, double side cooled 21 °C/kW MOUNTING R th(j-h) Thermal impedance T Operating junction temperature -30 / 125 °C Mounting force 22.0 / 24.5 kN F j Mass 520 ORDERING INFORMATION : ARF674 S 45 standard specification VRRM/100 g ARF674 FAST RECOVERY DIODE POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FINAL SPECIFICATION feb 97 - ISSUE : 03 DISSIPATION CHARACTERISTICS SQUARE WAVE 3500 DC 180° 3000 120° DC Power Dissipation [W] 90° 2500 60° 30° 2000 1500 1000 500 0 0 200 400 600 800 1000 1200 1400 Mean Forward Current [A] SINE WAVE 3500 180° 120° Power Dissipation [W] 3000 DC 90° 60° 2500 30° 2000 1500 1000 500 0 0 200 400 600 800 Mean Forward Current [A] 1000 1200 1400 ARF674 FAST RECOVERY DIODE POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FINAL SPECIFICATION feb 97 - ISSUE : 03 SWITCHING CHARACTERISTICS FORWARD RECOVERY VOLTAGE 80 70 Tj = 125 °C 60 VFR [V] 50 40 IF VFR Tj = 25 °C 30 20 VF 10 0 0 200 400 600 800 1000 1200 di/dt [A/µs] REVERSE RECOVERY CURRENT Tj = 125 °C REVERSE RECOVERY CHARGE Tj = 125 °C 3500 1200 1000 A 1000 A 3000 1000 500 A 800 500 A 2000 Irr [A] Qrr [µC] 2500 1500 250 A 600 400 250 A 1000 200 500 0 0 0 100 200 di/dt ta = Irr / (di/dt) 300 400 0 100 300 400 di/dt [A/µs] [A/µs] tb = trr - ta 200 IF d i/d t ta tb Softness (s factor) s = tb / ta 25% di Irr Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) Irr Vr ARF674 FAST RECOVERY DIODE POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FINAL SPECIFICATION feb 97 - ISSUE : 03 FORWARD CHARACTERISTIC Tj = 125 °C SURGE CHARACTERISTIC Tj = 125 °C 3000 16 14 2500 ITSM [kA] Forward Current [A] 12 2000 1500 1000 10 8 6 4 500 2 0 0 1 1.5 2 2.5 3 3.5 4 1 10 n° cycles Forward Voltage [V] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 25.0 Zth j-h [°C/kW] 20.0 15.0 10.0 5.0 0.0 0.001 0.01 0.1 1 10 100 t[s] Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100