CM300HA-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD™ H-Series Module 300 Amperes/1400 Volts A S D W - M6 THD. (2 TYP.) P G F C T Q X - M4 THD. (2 TYP.) M H Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. V - DIA. (4 TYP.) N B U K K R E J L T E C E G Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.21 107.0 M 0.83 21.0 B 3.661±0.01 93.0±0.25 N 0.69 17.5 C 2.44 62.0 P 0.63 16.0 D 1.89±0.01 48.0±0.25 Q 0.51 13.0 E 1.42 Max. 36.0 Max. R 0.43 11.0 F 1.34 34.0 S 0.35 9.0 G 1.18 30.0 T 0.28 7.0 H 1.14 29.0 U 0.12 3.0 J 0.98 Max. 25.0 Max. V 0.26 Dia. Dia. 6.5 K 0.94 24.0 W M6 Metric M6 L 0.93 23.5 X M4 Metric M4 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300HA-28H is a 1400V (VCES), 300 Ampere Single IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 300 28 185 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300HA-28H Single IGBTMOD™ H-Series Module 300 Amperes/1400 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM300HA-28H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1400 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) IC 300 Amperes ICM 600 Amperes Emitter Current* (Tc = 25°C) IE 300 Amperes Peak Emitter Current* (Tj ≤ 150°C) IEM 600 Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 2100 Watts Max. Mounting Torque M6 Main Terminal Screws – 26 in-lb Max. Mounting Torque M6 Mounting Screws – 26 in-lb Max. Mounting Torque M4 Terminal Screws – 13 in-lb – 400 Grams VRMS 2500 Volts Module Weight (Typical) V Isolation (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V – – 1.0 mA IGES VGE = VCES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 5.0 6.5 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Current IC = 300A, VGE = 15V, Tj = 25°C – 3.1 4.2 Volts IC = 300A, VGE = 15V, Tj = 125°C – 2.95 – Volts Total Gate Charge QG VCC = 800V, IC = 300A, VGE = 15V – 1530 – nC Emitter-Collector Voltage* VEC IE = 300A, VGE = 0V – – 3.8 Volts Min. Typ. Max. Units – – 60 nF – – 21 nF Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VGE = 0V, VCE = 10V, f = 1MHz Reverse Transfer Capacitance Cres – – 12 nF Resistive td(on) – – 250 ns Turn-on Delay Time Load Rise Time Switching Turn-off Delay Time Times tr VCC = 800V, IC = 300A – – 500 ns td(off) VGE1 = VGE2 = 15V, RG = 1.0Ω – – 350 ns Fall Time tf – – 500 ns Diode Reverse Recovery Time* trr IE = 300A, diE/dt = –600A/µs – – 300 ns Diode Reverse Recovery Charge* Qrr IE = 300A, diE/dt = –600A/µs – 3.0 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.06 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.12 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.04 °C/W * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode. 186 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300HA-28H Single IGBTMOD™ H-Series Module 300 Amperes/1400 Volts 600 500 14 5 13 15 COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC VGE = 20V 12 400 300 11 200 10 100 9 VCE = 10V Tj = 25°C Tj = 125°C 500 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 600 400 300 200 100 8 0 0 0 2 4 6 8 0 10 12 16 3 2 1 0 20 0 100 200 300 500 400 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 6 IC = 600A 4 IC = 300A 2 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C 8 102 Cies 101 Coes 100 Cres VGE = 0V f = 1MHz IC = 120A 101 1.0 0 4 8 12 16 20 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 2.5 3.0 3.5 REVERSE RECOVERY TIME, t rr, (ns) 103 td(off) tf td(on) 102 VCC = 800V VGE = ±15V RG = 1.0Ω Tj = 125°C tr 102 COLLECTOR CURRENT, IC, (AMPERES) 10-1 10-1 4.0 100 103 Irr t rr 101 di/dt = -600A/µsec Tj = 25°C 101 101 102 EMITTER CURRENT, IE, (AMPERES) 102 GATE CHARGE, VGE 102 102 101 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 101 101 2.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 1.5 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 600 102 Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 8 VGE = 15V Tj = 25°C Tj = 125°C 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 Switching Time, (ns) 4 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 300A 16 VCC = 600V 12 VCC = 800V 8 4 0 0 400 800 1200 1600 2000 GATE CHARGE, QG, (nC) 187 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 188 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.06°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) CM300HA-28H Single IGBTMOD™ H-Series Module 300 Amperes/1400 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.12°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3