CM400DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 400 Amperes/250 Volts TC MEASURE POINT A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q K Q K H U C1 P G N K Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. R M C L Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches A 4.25 108.0 L 0.87 22.0 B 2.44 62.0 M 0.33 8.5 C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 Millimeters N 0.10 2.5 D 3.66±0.01 93.0±0.25 P 0.85 21.5 E 1.88±0.01 48.0±0.25 Q 0.98 25.0 F 0.67 17.0 R 0.11 2.8 G 0.16 4.0 S M6 M6 H 0.24 6.0 T 0.26 Dia. J 0.59 15.0 U 0.002 K 0.55 14.0 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400DU-5F is a 250V (VCES), 400 Ampere Dual IGBTMOD™ Power Module. 6.5 Dia. 0.05 Type Current Rating Amperes VCES Volts (x 50) CM 400 5 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-5F Trench Gate Design Dual IGBTMOD™ 400 Amperes/250 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Symbol CM400DU-5F Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 250 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 400 Amperes ICM 800* Amperes IE 400 Amperes Peak Emitter Current** IEM 800* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 890 Watts Mounting Torque, M6 Main Terminal – 40 in-lb Mounting Torque, M6 Mounting – 40 in-lb – 400 Grams Viso 2500 Volts Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Collector-Cutoff Current Gate Leakage Current Test Conditions ICES VCE = VCES, VGE = 0V Min. Typ. Max. Units – – 1.0 mA IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V 3.0 4.0 5.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 400A, VGE = 10V, Tj = 25°C – 1.2 1.7 Volts IC = 400A, VGE = 10V, Tj = 125°C – 1.1 – Volts Total Gate Charge QG VCC = 100V, IC = 400A, VGE = 10V – 1500 Emitter-Collector Voltage* VEC IE = 400A, VGE = 0V – – – 2.0 nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. – – Max. – – 7.0 nf – – 3.8 nf Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 100V, IC = 400A, – – 850 ns Load Rise Time tr VGE1 = VGE2 = 10V, – – 400 ns Switch Turn-off Delay Time td(off) RG = 6.3⍀, Resistive – – 1100 ns Times Fall Time tf Load Switching Operation – – 500 ns Diode Reverse Recovery Time trr IE = 400A – – 300 ns Diode Reverse Recovery Charge Qrr IE = 400A – 16.0 – µC Min. Typ. Max. VCE = 10V, VGE = 0V 110 Units Input Capacitance nf Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Test Conditions Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.14 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.24 °C/W Thermal Resistance, Junction to Case Rth(j-c´)Q Per IGBT 1/2 Module* – – 0.08 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.04 – °C/W Contact Thermal Resistance 2 Symbol * TC measured point is just under chip. Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-5F Trench Gate Design Dual IGBTMOD™ 400 Amperes/250 Volts OUTPUT CHARACTERISTICS (TYPICAL) VGE = 15V 540 800 10 8 2.0 6.25 6.5 6 480 5.75 320 5.5 160 5.25 VCE = 10V Tj = 25°C Tj = 125°C 640 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 480 320 160 5 0 0 0 1 2 3 4 0.8 0.4 2 4 6 8 0 10 160 320 480 640 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 6 IC = 800A IC = 400A 2 IC = 160A 4 8 12 16 20 0.8 1.0 1.2 1.4 1.6 Cres 100 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, trr, (ns) td(off) td(on) tf tr 102 VCC = 100V VGE = ±10V RG = 6.3 Ω Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE trr Irr VCC = 100V VGE = ±10V RG = 6.3 Ω Tj = 125°C 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 102 10-1 10-1 1.8 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 101 101 Coes VGE = 0V f = 1MHz 101 0.6 0 0 102 101 101 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 4 Cies CAPACITANCE, Cies, Coes, Cres, (nF) 8 800 102 Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 1.2 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 10 SWITCHING TIME, (ns) 1.6 0 0 5 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 800 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 400A 16 VCC = 50V 12 VCC = 100V 8 4 0 0 500 1000 1500 2000 2500 3000 GATE CHARGE, QG, (nC) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.14°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 4 101 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM400DU-5F Trench Gate Design Dual IGBTMOD™ 400 Amperes/250 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.24°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3