CM400HU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD™ U-Series Module 400 Amperes/1200 Volts A B E H K L M 4 - Mounting Holes J F G C D G E E C CM 2 - M4 NUTS Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. 2 - M8 NUTS TC Measured Point N P E Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking C E G Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.21 107.0 B 3.66±0.01 C 2.44 D 1.89±0.01 E 0.53 93.0±0.25 62.0 48.0±0.25 Dimensions Inches H 1.02 J 0.37 9.5 K 1.14 29.0 L 0.81 13.5 M 0.26 Dia. Millimeters 26.0 20.5 6.5 Dia. F 0.49 12.55 N 1.34 +0.04/-0.02 34 +1.0/-0.5 G 0.39 10.0 P 1.02 +0.04/-0.02 26 +1.0/-0.5 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400HU-24H is a 1200V (VCES), 400 Ampere Single IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 400 24 7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400HU-24H Single IGBTMOD™ U-Series Module 400 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM400HU-24H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 400 Amperes ICM 800* Amperes IE 400 Amperes Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 25°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** IEM 800* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 2100 Watts Mounting Torque, M6 Main Terminal, M6 Mounting – 40 in-lb Mounting Torque, M4 Terminal – 15 in-lb – 450 Grams Viso 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 2 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 400A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts IC = 400A, VGE = 15V, Tj = 125°C – – Volts Total Gate Charge QG VCC = 600V, IC = 400A, VGE = 15V – 1500 – nC Emitter-Collector Voltage* VEC IE = 400A, VGE = 0V – – 2.85 3.2 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time tr Switch Turn-off Delay Time Times Fall Time Test Conditions Min. Typ. Max. – – 60 nf – – 21 nf – – 12 nf VCC = 600V, IC = 400A, – – 250 ns VGE1 = VGE2 = 15V, – – 350 ns VCE = 10V, VGE = 0V Units td(off) RG = 0.78V, Resistive – – 350 ns tf Load Switching Operation – – 350 ns Diode Reverse Recovery Time trr IE = 400A, diE/dt = -800A/µs – – 300 ns Diode Reverse Recovery Charge Qrr IE = 400A, diE/dt = -800A/µs – 2.2 – µC Max. Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Min. Typ. Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT Module – – 0.06 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi Module – – 0.09 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.02 – °C/W Contact Thermal Resistance 8 Symbol Test Conditions Units Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400HU-24H Single IGBTMOD™ U-Series Module 400 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) 800 12 VGE = 20V 600 11 400 10 9 200 8 0 2 4 6 8 600 400 200 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 10 4 8 12 16 240 0 20 480 720 960 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 102 2 IC = 160A 101 1.0 0 103 4 8 12 16 20 2.5 3.0 3.5 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 td(off) td(on) VCC = 600V VGE = ±15V RG = 0.78 Ω Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) 103 Irr 101 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 Cres VGE = 0V f = 1MHz 100 101 102 GATE CHARGE, VGE di/dt = -800A/µsec Tj = 25°C trr Coes COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 102 101 10-1 10-1 4.0 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) tr 101 101 2.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) tf 102 1.5 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY TIME, trr, (ns) 0 CAPACITANCE, Cies, Coes, Cres, (nF) 4 102 Cies 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 400A REVERSE RECOVERY CURRENT, Irr, (AMPERES) IC = 800A 8 6 1200 Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VCE = 10V Tj = 25°C Tj = 125°C 0 0 SWITCHING TIME, (ns) 5 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 800 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 400A 16 VCC = 400V 12 VCC = 600V 8 4 0 0 400 800 1200 1600 2000 GATE CHARGE, QG, (nC) 9 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.06°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM400HU-24H Single IGBTMOD™ U-Series Module 400 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.09°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3