CM600HU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Single IGBTMOD™ 600 Amperes/1200 Volts T (2 TYP) A D R (2 TYP.) F G G C E L E E CM H J K B Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. P TC MEASURING POINT S (4 TYP) C N Q Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking E C RTC E G Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches A 4.33 110.0 K 1.14 29.0 B 3.15 80.0 L 0.37 9.5 C 1.34 +0.04/-0.02 34.0 +1.0/-0.5 N Millimeters 1.02 +0.04/-0.02 26.0 +1.0/-0.5 D 3.66±0.01 93.0±0.25 P 0.85 21.5 E 2.44±0.01 62.0±0.25 Q 0.16 4.0 F 0.22 R M8 M8 5.5 G 0.57 14.5 S H 0.53 13.5 T J 0.96 24.5 0.26 Dia. M4 6.5 Dia. M4 Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600HU-24F is a 1200V (VCES), 600 Ampere Single IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 600 24 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-24F Trench Gate Design Single IGBTMOD™ 600 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600HU-24F Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 600 Amperes ICM 1200* Amperes Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) IE 600 Amperes Peak Emitter Current** IEM 1200* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 1900 Watts Mounting Torque, M8 Main Terminal – 95 in-lb Mounting Torque, M6 Mounting – 40 in-lb Mounting Torque, M4 Terminal – 15 in-lb – 600 Grams Viso 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Min. Typ. Max. ICES VCE = VCES, VGE = 0V Test Conditions – – 2 mA IGES VGE = VCES, VCE = 0V – – 80 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Voltage IC = 600A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts IC = 600A, VGE = 15V, Tj = 125°C – 1.9 – Volts Total Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V – 6600 Emitter-Collector Voltage** VEC IE = 600A, VGE = 0V – – * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Units – 3.2 nC Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-24F Trench Gate Design Single IGBTMOD™ 600 Amperes/1200 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions Min. Typ. Max. Units – – 230 nf VCE = 10V, VGE = 0V – – 10 nf Reverse Transfer Capacitance Cres – – 6 nf Inductive Turn-on Delay Time td(on) VCC = 600V, IC = 600A, – – 300 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 150 ns Switch Turn-off Delay Time td(off) RG = 1.0 ⍀, – – 800 ns Times Fall Time tf Inductive Load – – 300 ns Diode Reverse Recovery Time** trr Switching Operation – – 500 ns Diode Reverse Recovery Charge** Qrr IE = 600A – 43.2 – µC Typ. Max. Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT, Tc Reference Thermal Resistance, Junction to Case Rth(j-c)D Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT, Rth(c-f) Per Module, Thermal Grease Applied Min. – Units 0.063 °C/W 0.075 °C/W Point per Outline Drawing Per FWDi, Tc Reference – – – 0.03 – 0.015 Point per Outline Drawing °C/W Tc Reference Point Under Chip Contact Thermal Resistance – °C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-24F Trench Gate Design Single IGBTMOD™ 600 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 9.5 VGE = 20V 9 800 600 8.5 400 8 200 0 0 1 2 3 5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 1000 3 10 11 15 Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 1200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 15V Tj = 25°C Tj = 125°C 2 1 3 IC = 1200A IC = 600A 2 IC = 240A 1 0 0 4 Tj = 25°C 4 0 200 400 600 800 0 1000 1200 6 18 20 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 103 td(off) 102 Cies SWITCHING TIME, (ns) 103 102 101 0 1.0 2.0 3.0 100 10-1 4.0 100 101 GATE CHARGE, VGE 102 trr VCC = 600V VGE = ±15V RG = 1.0 Ω Tj = 25°C Inductive Load 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Irr REVERSE RECOVERY CURRENT, Irr, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 VCC = 600V VGE = ±15V RG = 1.0 Ω Tj = 125°C Inductive Load IC = 600A 16 VCC = 400V VCC = 600V 12 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 tr 101 Cres EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 103 102 Coes VGE = 0V 101 tf td(on) 8 4 102 103 COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Tj = 25°C REVERSE RECOVERY TIME, trr, (ns) 10 12 14 COLLECTOR-CURRENT, IC, (AMPERES) 104 4 8 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 100 10-3 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 0 0 2000 4000 6000 8000 10000 GATE CHARGE, QG, (nC) 101 Per Unit Base Rth(j-c) = 0.063°C/W (IGBT) Rth(j-c) = 0.075°C/W (FWDi) Single Pulse TC = 25°C 10-5 10-4 10-3 10-3 TIME, (s) 4