CM75TU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD™ U-Series Module 75 Amperes/600 Volts A B F G E S 4 - Mounting Holes G H E H E R K L GuP EuP C GuN EuN GvP EvP GwP EwP D TC Measured Point TC Measured Point M GwN EwN GvN EvN u v w K J E H N J E E H 5 - M4 NUTS 0.110 - 0.5 Tab P Q P GuP GvP GwP EuP EvP EwP U V W GuN GvN GwN EuN EvN EwN Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking N Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.02 102.0 K 0.05 1.25 B 3.15±0.01 80.0±0.25 L 0.74 18.7 M 1.55 39.3 N 0.12 91.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM75TU-12H is a 600V (VCES), 75 Ampere SixIGBT IGBTMOD™ Power Module. C 3.58 D 2.91±0.01 E 0.43 11.0 P 0.32 8.1 F 0.79 20.0 Q 1.02 26.0 G 0.39 10.0 R 0.47 11.85 Type Current Rating Amperes VCES Volts (x 50) H 0.75 19.1 S 0.22 Dia. 5.5 Dia. CM 75 12 J 0.79 20.0 74.0±0.25 3.05 77 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TU-12H Six IGBTMOD™ U-Series Module 75 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM75TU-12H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 75 Amperes ICM 150* Amperes IE 75 Amperes Peak Emitter Current** IEM 150* Amperes Maximum Collector Dissipation (Tj < 150°C) Pc 310 Watts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Mounting Torque, M4 Main Terminal – 15 in-lb Mounting Torque, M5 Mounting – 31 in-lb – 570 Grams Viso 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C 4.5 6 7.5 Volts – 2.4 3.0 Volts IC = 75A, VGE = 15V, Tj = 125°C – Total Gate Charge QG VCC = 300V, IC = 75A, VGE = 15V – 150 – Volts – nC Emitter-Collector Voltage* VEC IE = 75A, VGE = 0V – – 2.6 Min. Typ. Max. Units – – 6.6 nf – – 3.6 nf – – 1 nf 2.6 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 300V, IC = 75A, – – 100 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 250 ns Switch Turn-off Delay Time Times Fall Time VCE = 10V, VGE = 0V td(off) RG = 8.3V, Resistive – – 200 ns tf Load Switching Operation – – 300 ns Diode Reverse Recovery Time trr IE = 75A, diE/dt = -150A/µs – – 160 ns Diode Reverse Recovery Charge Qrr IE = 75A, diE/dt = -150A/µs – 0.18 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/6 Module – – 0.4 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per Free-Wheel Diode 1/6 Module – – 0.9 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.018 – °C/W Contact Thermal Resistance 78 Units Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TU-12H Six IGBTMOD™ U-Series Module 75 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) 150 15 13 14 125 V = 20V GE 100 12 75 11 50 10 25 9 5 VCE = 10V Tj = 25°C Tj = 125°C 125 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 100 75 50 25 8 0 0 0 2 4 6 8 3 2 1 4 8 12 16 0 20 40 80 160 120 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 101 Tj = 25°C 8 IC = 150A 6 IC = 75A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C EMITTER CURRENT, IE, (AMPERES) 102 101 Cies 100 Coes 10-1 Cres VGE = 0V f = 1MHz IC = 30A 100 1.0 0 0 4 8 12 16 20 1.5 2.0 2.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, trr, (ns) td(off) tf 102 td(on) 101 VCC = 300V VGE = ±15V RG = 8.3 Ω Tj = 125°C 100 100 3.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 tr 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 trr Irr 101 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE di/dt = -150A/µsec Tj = 25°C 101 100 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 102 10-2 10-1 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 SWITCHING TIME, (ns) VGE = 15V Tj = 25°C Tj = 125°C 0 0 10 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 75A 16 VCC = 200V 12 VCC = 300V 8 4 0 0 50 100 1500 200 GATE CHARGE, QG, (nC) 79 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 80 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.4°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM75TU-12H Six IGBTMOD™ U-Series Module 75 Amperes/600 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.9°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3