POWEREX CM75TU-34KA

CM75TU-34KA
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Six IGBTMOD™
KA-Series Module
75 Amperes/1700 Volts
S - NUTS
(5 TYP)
J
T - (4 TYP.)
K
K
CM
TC
Measuring
Point
R
N
P
P
G UP E U P
L
G VP E VP
N
L
N
L
B E
Q
M
G U N E UN
G V N EV N
U
GWN EWN
R
W
V
J
L
TC
Measuring
Point
GWP EWP
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
J
N
L
N
L
V
D
A
W - THICK x X - WIDE
TAB (12 PLACES)
H
C
F
P
GU P
EUP
G VP
E VP
G WP
E WP
U
V
W
GUN
E UN
N
G VN
E VN
GWN
E WN
G
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
A
4.21
107.0
M
0.57
4.02
102.0
N
0.85
21.7
P
0.67
17.0
48.5
B
C
1.14 +0.04/-0.02 29.0 +1.0/-0.5
Millimeters
14.4
D
3.54±0.01
90.0±0.25
Q
1.91
E
3.15±0.01
80.0±0.25
R
0.15
F
0.16
4.0
S
M5
M5
G
1.02
26.0
T
0.26 Dia.
6.5 Dia.
3.75
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75TU-34KA is a
1700V (VCES), 75 Ampere SixIGBT IGBTMOD™ Power Module.
H
0.31
8.1
V
0.03
0.8
J
0.91
23.0
W
0.02
0.5
Type
Current Rating
Amperes
VCES
Volts (x 50)
K
0.47
12.0
X
0.110
2.79
CM
75
34
L
0.43
11.0
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-34KA
Six IGBTMOD™ KA-Series Module
75 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Symbol
CM75TU-34KA
Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1700
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
75
Amperes
ICM
150*
Amperes
IE
75
Amperes
Peak Emitter Current**
IEM
150*
Amperes
Maximum Collector Dissipation (Tc = 25°C)
Pc
660
Watts
Mounting Torque, M5 Main Terminal
–
31
in-lb
Mounting Torque, M5 Mounting
–
31
in-lb
–
680
Grams
Viso
3500
Volts
Storage Temperature
Collector Current (Tc = 25°C)
Peak Collector Current (Tj ≤ 150°C)
Emitter Current** (Tc = 25°C)
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Min.
Typ.
Max.
Collector-Cutoff Current
Symbol
ICES
VCE = VCES, VGE = 0V
Test Conditions
–
–
1
Units
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 7.5mA, VCE = 10V
4.0
5.5
7.0
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 75A, VGE = 15V, Tj = 25°C
–
3.2
4.0
Volts
IC = 75A, VGE = 15V, Tj = 125°C
–
–
Volts
Total Gate Charge
QG
VCC = 1000V, IC = 75A, VGE = 15V
–
–
nC
Emitter-Collector Voltage*
VEC
IE = 75A, VGE = 0V, Tj = 25°C
–
–
4.6
Volts
IE = 75A, VGE = 0V, Tj = 125°C
–
2.2
–
Volts
3.8
340
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
2
Symbol
Test Conditions
Min.
Typ.
Max.
Units
–
–
10.5
nf
–
–
1.8
nf
–
–
0.55
nf
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
VCC = 1000V, IC = 75A,
–
–
100
ns
Load
Rise Time
tr
VGE1 = VGE2 = 15V,
–
–
100
ns
Switch
Turn-off Delay Time
td(off)
RG = 4.2⍀, Resistive
–
–
400
ns
Times
Fall Time
tf
Inductive Load
–
–
800
ns
Diode Reverse Recovery Time
trr
Switching Operation
–
–
200
ns
Diode Reverse Recovery Charge
Qrr
IE = 75A
–
5.3
–
µC
VCE = 10V, VGE = 0V
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-34KA
Six IGBTMOD™ KA-Series Module
75 Amperes/1700 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/6 Module
–
–
0.19
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/6 Module
–
–
0.35
°C/W
Rth(c-f)
Per Module, Thermal Grease Applied
–
0.09
–
°C/W
Rth(j-c')Q
Tc Measured Point
–
–
0.13*
°C/W
Contact Thermal Resistance
Thermal Resistance
(Under Chips - IGBT Part)
* If you use this value, Rth(f-a) should be measured just under the chips.
OUTPUT CHARACTERISTICS
(TYPICAL)
150
12
125
11
VGE = 20V
100
10
75
9
50
8
25
120
90
60
30
0
0
0
2
4
6
8
10
VGE = 15V
Tj = 25°C
Tj = 125°C
5
4
3
2
1
0
0
4
8
12
16
0
20
25
50
75
100
125
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
103
10
6
IC = 150A
IC = 75A
4
2
IC = 30A
CAPACITANCE, Cies, Coes, Cres, (nF)
Tj = 25°C
8
102
101
Cies
100
Coes
Cres
VGE = 0V
101
0
0
4
150
102
Tj = 25°C
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
6
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
14
15
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
150
Tj = 25oC
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
8
12
16
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
1
2
3
4
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
5
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-34KA
Six IGBTMOD™ KA-Series Module
75 Amperes/1700 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
102
td(on)
101
tr
100
100
101
102
VCC = 1000V
VGE = ±15V
RG = 4.2 Ω
Tj = 25°C
INDUCTIVE
LOAD
102
101
100
100
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.19°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
4
101
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
100
10-1
100
102
101
EMITTER CURRENT, IE, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-2
trr
Irr
COLLECTOR CURRENT, IC, (AMPERES)
10-3
101
101
100
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.35°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
IC = 75A
16
VCC = 800V
VCC = 1000V
12
8
4
0
0
100
200
300
GATE CHARGE, QG, (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-3
101
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
REVERSE RECOVERY TIME, trr, (ns)
SWITCHING TIME, (ns)
103
VCC = 1000V
VGE = ±15V
tf
RG = 4.2 Ω
Tj = 125°C
td(off)
GATE CHARGE, VGE
102
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
103
104
10-3
10-3
400
500