Mitsubishi Thyristor FT1500AU-240 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Ultra High Voltage Thyristor 1500 Amperes/12000 Volts J x K (BOTH SIDES) H TYP GATE (WHITE) G TYP AUX CATHODE POTENTIAL CONNECTOR (RED) F A TYPE NAME Features: □ Average On-state Current (IT(AV) = 1500A) B C □ Repetitive Peak Off-state Voltage (VDRM = 12000V) □ Low On-state Voltage CATHODE D □ Press Pack Type E D ANODE Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.13 Dia. 105.0 Dia. B 4.13 Dia. 105.0 Dia. C 6.5 Dia. 165.0 Dia. D 0.2 Description: Powerex Ultra High Voltage Thyristors are used in high voltage AC Switch and Static Var Compensator (SVC) applications. 0.40 E 1.38±0.02 35.0±0.5 F 17.99±0.39 457.0±10 G 0.30 7.5 H 0.17 Dia. 4.3 Dia. J 0.14 Dia. 3.6±0.1 Dia. K 0.09 Deep 2.2±0.1 Deep Applications: □ High Voltage AC Switch □ Static Var Compensator (SVC) Ordering Information: Example: Select the complete part module number you desire from the table below. Device FT* Current Rating Amperes Manu. Number Type Voltage Rating (x 50) 1500 A U** 240 * Press Pack Thyristor **Ultra High Voltage 1 Mitsubishi Thyristor Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 FT1500AU-240 Ultra High Voltage Thyristor 1500 Amperes/12000 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol FT1500AU-240 Units Repetitive Peak Reverse Voltage VRRM 12000 Volts Non-Repetitive Peak Reverse Voltage VRSM 12000 Volts DC Reverse Voltage VR(DC) 9600 Volts Repetitive Peak Off-state Voltage VDRM 12000 Volts Non-Repetitive Peak Off-state Voltage VDSM 12000 Volts IT(RMS) 2360 Amperes Average On-state Current, f = 60Hz, Sine Wave u = 180°C, Tf = 88°C IT(AV) 1500 Amperes Surge (Non-repetitive) On-state Current, One Half Cycle at 60Hz ITSM 34 kA I2t 4.8 x 106 A2s diT/dt 100 A/µs RMS On-state Current Current-squared, Time Integration, One Cycle at 60Hz Critical Rate of Rise of On-state Current, VD = 1/2 VDRM, IG = 2.0A, Tj = 125°C Peak Forward Gate Power Dissipation PFGM 30 Watts PFG(AV) 8.0 Watts Peak Forward Gate Voltage VFGM 20 Volts Peak Reverse Gate Voltage VRGM 10 Volts Peak Forward Gate Current Average Forward Gate Power Dissipation IFGM 6.0 Amperes Junction Temperature Tj -40 to 125 °C Storage Temperature Tstg -40 to 150 °C – 108 ~ 132 kN – 4000 Grams VD(DC) 9600 Volts Mounting Force Required, Recommended Value 118 Weight, Standard Value DC Off-state Voltage Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Repetitive Peak Reverse Current IRRM Tj = 125°C, VRRM Applied – – 1200 mA Repetitive Peak Off-state Current IDRM Tj = 125°C, VDRM Applied – – 1200 mA On-state Voltage VTM Tj = 125°C, ITM = 3000A, – – 4.0 Volts Instantaneous Measurement Critical Rate of Rise of Off-state Voltage dv/dt Tj = 125°C, VD = 1/2 VDRM 2000 – – V/µs Gate Trigger Voltage VGT Tj = 25°C, VD = 6V, RL = 2Ω – – 2.5 Volts Gate Non-trigger Voltage VGD Tj = 125°C, VD = 1/2 VDRM 0.2 – – Volts Gate Trigger Current IGT Tj = 25°C, VD = 6V, RL = 2Ω – – 350 mA Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified 2 Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Fin Rth(j-f) – – – 0.005 °C/W Mitsubishi Thyristor Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 FT1500AU-240 Ultra High Voltage Thyristor 1500 Amperes/12000 Volts Tj = 125oC 103 102 2 3 4 5 6 7 8 40 GATE VOLTAGE, VG, (VOLTS) 104 30 20 10 PFGM = 30W VFGM = 20V PFG(avg) = 8W 101 VGT = 2.5V IGT 100 Tj = 125°C Tj = 25°C Tj = -40°C IFGM = 6.0A VGD = 0.2V 0 100 9 101 10-1 101 102 102 103 104 INSTANTANEOUS ON-STATE VOLTAGE, VTM, (VOLTS) CONDUCTION TIME, (CYCLES AT 60 Hz) GATE CURRENT, IG, (mA) MAXIMUM THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION-TO-FIN) 101 MAXIMUM ON-STATE POWER DISSIPATION (SINGLE-PHASE HALF WAVEFORM) ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVEFORM) 10000 0.005 0.004 0.003 0.002 0.001 0 10-3 125 RESISTIVE, INDUCTIVE LOADS 8000 100 180° u 6000 360° 90° u = 30° 120° 60° 4000 FIN TEMPERATURE, (°C) MAXIMUM POWER DISSIPATION, (WATTS) 100 0.006 2000 10-1 100 50 90° 120° 180° u 360° RESISTIVE, INDUCTIVE LOADS 0 0 300 600 900 1200 1500 0 300 600 900 1200 1500 AVERAGE ON-STATE CURRENT, IT(avg), (AMPERES) AVERAGE ON-STATE CURRENT, IT(avg), (AMPERES) MAXIMUM ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) 300 175 150 270° 360° 60° FIN TEMPERATURE, (°C) u u 360° 180° 120° 90° u = 30° 4000 2000 125 RESISTIVE, INDUCTIVE LOADS 100 u = 30° 60° 75 90° 50 120° GATE TRIGGER CURRENT, (mA) DC 8000 200 100 VD = 6V RL = 2Ω DC METHOD 25 180° 270° DC 0 0 0 0 60° TIME, (S) RESISTIVE, INDUCTIVE LOADS 6000 u = 30° 75 25 0 10-2 10000 MAXIMUM POWER DISSIPATION, (WATTS) GATE CHARACTERISTICS 102 50 1 MAXIMUM THERMAL IMPEDANCE, Zth(j-c), (°C/WATT) RATED SURGE ON-STATE CURRENT 105 SURGE ON-STATE CURRENT, ITSM, (kA) INSTANTANEOUS ON-STATE CURRENT, IT, (AMPERES) MAXIMUM ON-STATE CHARACTERISTICS 500 1000 1500 2000 2500 AVERAGE ON-STATE CURRENT, IT(avg), (AMPERES) 0 500 1000 1500 2000 2500 AVERAGE ON-STATE CURRENT, IT(avg), (AMPERES) -40 -20 20 60 100 140 180 JUNCTION TEMPERATURE, Tj, (°C) 3 Mitsubishi Thyristor Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 FT1500AU-240 Ultra High Voltage Thyristor 1500 Amperes/12000 Volts GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE (TYPICAL) HOLDING CURRENT, LATCHING CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) 3000 0 1500 1000 -20 20 60 100 500 140 JUNCTION TEMPERATURE, Tj, (°C) -20 20 60 100 140 ITM di/dt VR + dv/dt tq – 0 50 100 150 105 104 102 10-1 100 ITM VAK, iA ITM = 3000A VRM = 150V t xI QRR = rr rm 2 Tj = 125°C 103 2000 ITM 1000 di/dt + trr 0 t – Irm 101 di/dt VR + 0 0 100 tq VD dv/dt t VRM 102 RATE-OF-DECREASE OF ON-STATE CURRENT, (A/µs) 4 6 8 10 8000 6000 4000 ITM = 3000A di/dt = -10A/µs VRM = 150V t xI QRR = rr rm 2 2000 ITM + di/dt trr 0 t – Irm VRM 0 101 RATE-OF-RISE OF OFF-STATE VOLTAGE, (V/µs) REVERSE RECOVERED CHARGE VS. RATE-OF-DECREASE OF ON-STATE CURRENT (TYPICAL) 2 10000 ITM = 2800A di/dt = -10A/µs VR = 100V VD = 6000V Tj = 80°C – JUNCTION TEMPERATURE, Tj, (°C) 0 REVERSE RECOVERED CHARGE VS. JUNCTION TEMPERATURE (TYPICAL) t 0 t TURN-OFF TIME VS. RATE-OF-RISE OF OFF-STATE VOLTAGE (TYPICAL) VD 0 IGM tgt GATE CURRENT, IG, (mA) VAK, iA 1000 0 JUNCTION TEMPERATURE, Tj, (°C) REVERSE RECOVERED CHARGE, (µC) TURN-OFF TIME, (µs) 2000 0.1 VD IGM diG/dt = 1.5A/µs diT/dt = 100A/µs VD = 6000V Tj = 125°C ITM = 3000A 3000 ITM = 2800A di/dt = -10A/µs VR = 100V VD = 6000V dv/dt = 3V/µs VAK, iA TURN-OFF TIME, (µs) 3000 10 0.1 VD 5 -60 TURN-OFF TIME VS. JUNCTION TEMPERATURE (TYPICAL) 15 IH CONDITION: VD = 6V VARIABLE RESISTANCE 0 -60 REVERSE RECOVERED CHARGE, (µC) tgw VAK, iA VD = 6V RL = 2Ω DC METHOD 0 2000 IG = 1050mA tgw = 200µs t VD = 12V IL IG VAK, iG 1.0 2500 TURN-ON TIME, (µs) 2.0 20 IL CONDITION: iG, iA HOLDING CURRENT, LATCHING CURRENT, (mA) GATE TRIGGER VOLTAGE, (VOLTS) 3.0 4 TURN-ON TIME VS. GATE CURRENT (TYPICAL) 102 0 50 100 JUNCTION TEMPERATURE, Tj, (°C) 150