QIC0620003 200 Amp/600 Volts Preliminary Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBT Common Emitter Module 200 Amp/600 Volts Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching. The modules are isolated for easy mounting with other components on a common heatsink. QIC0620003 Dual IGBT Module Common Emitter 200 Amperes / 600 Volts Dimensions A B C D E F G H J K L Inches 3.70 1.34 1.18 3.15 0.67 0.28 0.67 0.91 0.91 M6X1.0 DIA 0.256 Millimeters 94 34 30 80 17 6.99 17.1 23 23 M6X1.0 DIA. 6.5 Features: Isolated Mounting Isolation Material - DBC Alumina Low Drive Power Internal Series Gate Resistors Super-Fast FWD (110ns) Copper Baseplate 2500 V isolating voltage QIC0620003 200 Amp/600 Volts Preliminary Dual IGBT Common Emitter Module 200 Amp/600 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Maximum Ratings, Tj=25°C unless otherwise specified Symbol Ratings QIC0620003 Units Collector Emitter Voltage VCES 600 Volts Gate Emitter Voltage VGES Volts Amperes Amperes Collector Current IC ±20 200 Peak Collector Current ICM 400* Diode Forward Current IF 50 Amperes Diode Forward Surge Current IFM 500 Amperes Junction Temperature Tj -40 to 150 Storage Temperature Tstg -40 to 125 °C °C Mounting Torque, M6 Terminal Screws - 40 In-lb Mounting Torque, M6 Mounting Screws - 40 In-lb Module Weight (Typical) - 200 Grams VRMS 2500 Volts V Isolation *Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj=25°C unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. Max. Units ICES IGES VCE=VCES VGE=0V VGE=VGES VCE=0V - - 1.0 0.5 mA µA Gate-Emitter Threshold Voltage VGE(th) IC=20mA, VCE=10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC=200A, VGE=15V - 2.1 2.8 Volts IC=200A, VGE=15V, Tj=150°C - 2.15 - Volts VCC=300V, IC=200A, VGS=15V IF=50A, VGS=0V - 600 - nC - - 2.8 Volts Collector Cutoff Current Gate Leakage Current Total Gate Charge QG Diode Forward Voltage VFM Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay time Rise Time Turn- off Delay Time Fall Time Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol Test Conditions Min. Typ. Max. Units Cies Coes Cres td(on) tr td(off) tf trr Qrr VGE=0V VCE=10V f=1MHz - 0.37 20 7 4 200 550 300 300 110 - nF nF ns ns ns ns ns ns µC VCC=300V IC=200A VGE1=VGE2=15V RG=3.1Ω IF=50A diF/dt=-100A/µS Thermal and Mechanical Characteristics, Tj=25°C unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case RθJC Per IGBT - 0.14 TBD °C/W Thermal Resistance, Junction to Case RθJC Per Diode - 0.70 TBD °C/W Contact Thermal Resistance, Thermal Grease Applied RθCF Per Module - - 0.075 °C/W