QIQ0645002 Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode Description: Powerex Low Side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy mounting with other components on a common heatsink. Features: Dim Inches Millimeters A 4.25 108.0 B 2.44 62.0 C 1.14+0.04/-0.02 29+1.0/-0.5 D 3.66±0.01 93.0±0.25 E 1.88±0.01 48.0±0.25 F 0.67 17.0 Welding Power Supplies G 0.16 4.0 H 0.24 6.0 J 0.59 15.0 Preliminary Dim K L M N P Q R S T Inches 0.55 0.87 0.33 0.10 0.85 0.98 0.11 0.25 Dia. 0.6 Page 1 Millimeters 14.0 22.0 8.5 2.5 21.5 25.0 2.8 6.5 Dia. 15.15 Low Drive Requirement Low VCE(sat) Super Fast Diode (3) F Series 150A 600V Chips per IGBT Switch (6) F Series 150A 600V Chips per Diode Isolated Baseplate for Easy Heat Sinking Low Thermal Impedance Isolated Material: DBC Alumina Applications: Choppers Welding Power Supplies 7/25/2002 QIQ0645002 Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode Maximum Ratings, Tj=25°°C unless otherwise specified Ratings Symbol QIQ0645002 Units Collector Emitter Voltage VCES 600 Volts Gate Emitter Voltage VGES ±20 Volts Collector Current (TC=25°C) IC 450 Amperes Peak Collector Current (Tj≤150°C) ICM 900* Amperes IFM 450 Amperes Peak Diode Forward Current IFM 1800 Amperes Diode I2t for Fusing for One Cycle t=8.3mS I2t 121500 A2sec Power Dissipation Pd 1650 Watts Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Mounting Torque, M6 Terminal Screws - 40 In-lb Mounting Torque, M6 Mounting Screws - 40 In-lb Module Weight (Typical) - 400 Grams VRMS 2000 Volts Diode Average Forward Current 180° Conduction, TC=70°C V Isolation *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Static Electrical Characteristics, Tj=25°°C unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. Max. Units ICES IGES VCE=VCES VGE=0V VGE=VGES VCE=0V - - 1.0 60 mA Gate-Emitter Threshold Voltage VGE(th) IC=45mA, VCE=10V 5.0 6.0 7.0 Volts Collector-Emitter Saturation Voltage VCE(sat) Collector Cutoff Current Gate Leakage Current Total Gate Charge QG Diode Forward Voltage VFM µA IC=450A, VGE=15V - 1.6 2.2 Volts IC=450A, VGE=15V, Tj=125°C - 1.6 - Volts VCC=300V, IC=450A, VGE=15V IF=900A - 2790 - nC - 2.0 2.6 Volts IF=450A - 1.7 - Volts IF=300A - 1.3 - Volts Dynamic Electrical Characteristics, Tj=25°°C unless otherwise specified Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay time Rise Time Turn- off Delay Time Fall Time Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol Test Conditions Min. Typ. Max. Units Cies Coes Cres td(on) tr td(off) tf trr Qrr VGE=0V VCE=10V f=1MHz - 8.4 123 8.1 4.5 TBD TBD TBD TBD 150 - nF nF ns ns ns ns ns ns VCC=300V IC=450A VGE1=VGE2=15V RG=4.2Ω IF=900A diF/dt=-1800A/µS µC Thermal and Mechanical Characteristics, Tj=25°°C unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case RθJC Per IGBT - 0.10 TBD °C/W Thermal Resistance, Junction to Case RθJC Per Diode - 0.085 TBD °C/W Contact Thermal Resistance (Thermal Grease Applied) RθCF Per Module - 0.02 - °C/W Preliminary Page 2 7/25/2002