QIQ1245001 Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode Description: Powerex Low Side Chopper IGBT Module is designed specially for customer applications. The modules are isolated for easy mounting with other components on a common heatsink. Features: Applications: Outline Drawing and Circuit Diagram Dim A B C D E F G H J Inches 4.33 3.15 1.14+0.04/-0.02 3.66±0.01 2.44±0.01 0.83 0.16 0.24 0.59 Preliminary Millimeters 110.0 80.0 29.0+1.0/-0.5 93.0±0.25 62.0±0.25 21.0 4.0 6.0 15.0 Low Drive Requirement Low VCE(sat) Super Fast Diode (3) F Series 150A 1200V Trench Gate Chips per IGBT (5) F Series 150A 1200V Chips per Diode Isolated Baseplate for Easy Heat Sinking Al2O3 DBC Ceramic Low Thermal Impedance Choppers Welding Power Supplies Dim K M P Q R S T V W X Inches 0.55 0.33 0.94 0.98 0.86 M6 0.26 Dia. 0.02 0.11 1.08 Page 1 Millimeters 14.0 8.5 24.0 25.0 21.75 M6 6.5 Dia. 0.5 2.79 27.35 n 4/22/2002 QIQ1245001 Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode Maximum Ratings, Tj=25°°C unless otherwise specified Ratings Symbol QIQ1245001 Units Collector- Emitter Voltage (G-E Short) VCES 1200 Volts Gate- Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current IC 450 Amperes Peak Collector Current (Tj<= 150°C) ICM 900* Amperes Diode Forward Current IFM 750 Amperes Power Dissipation Pd TBD Watts Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Mounting Torque, M6 Terminal Screws - 40 In-lb Mounting Torque, M6 Mounting Screws - 40 In-lb Module Weight (Typical) - 580 Grams VRMS 2500 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Static Electrical Characteristics, Tj=25°°C unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. Max. Units ICES IGES VCE=VCES VGE=0V VGE=VGES VCE=0V - - 1.0 60 mA Gate-Emitter Threshold Voltage VGE(th) IC=45mA, VCE=10V 5.0 6.0 7.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC=450A, VGE=15V - 1.8 2.4 Volts IC=450A, VGE=15V, Tj=125°C - 1.9 - Volts VCC=600V, IC=450A, VGS=15V IF=750A - 4950 - nC - - 3.2 Volts Collector Cutoff Current Gate Leakage Current Total Gate Charge QG Diode Forward Voltage VFM µA Dynamic Electrical Characteristics, Tj=25°°C unless otherwise specified Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay time Rise Time Turn-off Delay Time Fall Time Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol Test Conditions Min. Typ. Max. Units Cies Coes Cres td(on) tr td(off) tf trr Qrr VGE=0V VCE=10V f=1MHz - 44.0 180 7.6 4.5 TBD TBD TBD TBD 250 - nF nF nF ns ns ns ns ns µC Max. Units VCC=600V IC=450A VGE1=VGE2=15V RG=1.0Ω IF=750A Thermal and Mechanical Characteristics, Tj=25°°C unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case RθJC Per IGBT - 0.075 TBD °C/W Thermal Resistance, Junction to Case RθJC Per Diode - 0.052 TBD °C/W Contact Thermal Resistance RθCF Per Module - 0.01 - °C/W Preliminary Page 2 4/22/2002