FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " (dot) signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring collector currents up to 300mA. Sourced from Pr19 (NPN) and Pr63 (PNP). Absolute Maximum Ratings TA = 25°C unless otherwise noted Value Units Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PD Power Dissipation @Ta = 25°C* 0.7 W TSTG Storage Temperature Range -55 to +150 °C TJ Junction Temperature 150 °C RθJA Thermal Resistance, Junction to Ambient 180 °C/W Symbol Parameter VCEO Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions BVCEO Collector to Emitter Voltage Ic = 10 mA 30 V BVCBO Collector to Base Voltage Ic = 10 uA 60 V BVEBO Emitter to Base Voltage Ie = 10 uA 5 V 1998 Fairchild Semiconductor Corporation Page 1 of 2 Min Max Units 2227A.lwpPr19&63(Y1) FMB2227A Discrete Power & Signal Technologies (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions ICBO Collector Cutoff Current Vcb = 50V 30 nA IEBO Emitter Cutoff Current Veb = 3.0V 30 nA hFE DC Current Gain Vce = Vce = Vce = Vce = VCE(sat) Collector-Emitter Saturation Voltage Ic = 150mA, Ib=15mA Ic = 300mA, Ib=30mA 0.4 1.4 V VBE(sat) Base-Emitter Saturation Voltage 1.3 V 10V, 10V, 10V, 10V, Ic = 1.0mA Ic = 10mA Ic = 150mA Ic = 300mA Min Max 50 75 100 30 - Ic = 150mA, Ib=15mA Small - Signal Characteristics Units Typical COB Output Capacitance Vcb = 10V, f = 1.0MHz 6 pF CIB Input Capacitance Veb = 0.5V, f = 100kHz 20 pF fT Current Gain - Bandwidth Product Vce = 20V, Ic = 50mA, f = 100MHz 250 MHz 1998 Fairchild Semiconductor Corporation Page 2 of 2 2227A.lwpPr19&63(Y1) FMB2227A NPN & PNP Complementary Dual Transistor