QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 (4.95) FEATURES • != 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18° 0.040 (1.02) NOM • High Output Power 0.800 (20.3) MIN • Package material and color: Clear, peach tinted, plastic 0.050 (1.25) CATHODE 0.100 (2.54) NOM 1. Derate power dissipation linearly 2.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16” (1.6mm) minimum from housing. 0.240 (6.10) 0.215 (5.45) NOTES: 0.020 (0.51) SQ. (2X) SCHEMATIC ANODE 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. ABSOLUTE MAXIMUM RATINGS CATHODE (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Operating Temperature TOPR -40 to +100 °C Storage Temperature TSTG -40 to +100 °C (Iron)(2,3,4) Soldering Temperature TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C Continuous Forward Current IF 50 mA Reverse Voltage VR 5 V PD 200 mW Power Dissipation(1) ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER (TA =25°C) TEST CONDITIONS SYMBOL MIN TYP Peak Emission Wavelength IF = 100 mA Emission Angle IF = 100 mA Forward Voltage Reverse Current !PE — 880 — nm " — ±9 — Deg. IF = 100 mA, tp = 20 ms VF — — 1.7 V VR = 5 V IR — — 10 µA Radiant Intensity QED121 IF = 100 mA, tp = 20 ms IE 20 — 40 mW/sr Radiant Intensity QED122 IF = 100 mA, tp = 20 ms IE 50 — 100 mW/sr Radiant Intensity QED123 IF = 100 mA, tp = 20 ms IE 80 — — mW/sr tr — 800 — ns tf — 800 — ns Rise Time Fall Time 1 of 2 IF = 100 mA MAX UNITS 100021B QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE TYPICAL PERFORMANCE CURVES NORMALIZED COLLECTOR CURRENT NORMALIZED RADIANT INTENSITY 10 Normalized to: IF= 100 mA, TA = 25˚C Pulse Width = 100 µs 1 0.1 0.01 0.001 1 10 100 1 Normalized to: Pulse Width = 100 µs Duty Cycle = 0.1% VCC = 5 V RL = 100 # TA = 25˚C IF = 100 mA 0.8 0.6 IF = 20 mA 0.4 0.2 0 1000 0 1 IF - INPUT CURRENT (mA) 2 3 4 5 6 LENS TIP SEPERATION (INCHES) Fig. 1 Normalized Radiant Intensity vs. Input Current Fig. 2 Coupling Characteristics of QED12X and QSD12X NORMALIZED RADIANT INTENSITY 1.0 VF - FORWARD VOLTAGE (V) 2.5 IF = 50 mA IF = 100 mA 2 1.5 1 IF = 10 mA 0.5 IF = 20 mA Pulse Width = 100 µs Duty Cycle = 0.1% 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 775 90 100 800 825 850 TA - TEMPERATURE (˚C) 875 900 925 950 ! (nm) Fig. 3 Forward Voltage vs. Temperature Fig. 4 Normalized Radiant Intensity vs. Wavelength Fig. 5 Radiation Pattern 20 10 0˚ -10 -20 30 -30 40 -40 50 -50 60 -60 70 -70 80 -80 90 -90 100 2 of 2 80 60 40 20 0 20 40 60 80 100 100021B