QSE773 PLASTIC SILICON PIN PHOTODIODE FEATURES PACKAGE DIMENSIONS • Daylight Filter 0.215 (5.46) 0.199 (5.06) CL • Sidelooker Package • Pin Photodiode • Wide Reception Angle, 120° • Chip Size = .1072 inches (2.712 mm) 0.311 (7.90) 0.288 (7.30) 0.126 (3.20) 0.110 (2.80) SCHEMATIC 0.610 (15.49) MIN ANODE CATHODE 0.060 (1.52) 0.020 (0.51) SQ. (2x) 0.100 (2.54) 0.116 (2.95) 0.100 (2.54) 1. Derate power dissipation linearly 2.50 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16” (1.6mm) minimum from housing. 5. As long as leads are not under any stress or spring tension. 6. Light source is an GaAs LED which has a peak emission wavelength of 940 nm. 7. All measuements made under pulse conditions. NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. ABSOLUTE MAXIMUM RATINGS Parameter (TA = 25°C unless otherwise specified) Symbol Rating Unit Operating Temperature TOPR -40 to +85 °C Storage Temperature TSTG -40 to +85 °C Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C Reverse Voltage VR 32 V Power Dissipation(1) PD 150 mW 1 of 3 100032A QSE773 PLASTIC SILICON PIN PHOTODIODE ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER (TA =25°C unless otherwise specified) TEST CONDITIONS SYMBOL MIN IR = 0.1 mA VR 32 Dark Reverse Current VR = 10 V IR(D) — Peak Sensitivity VR = 5 V !PK Ee = 1.0 mW/cm2, VCE = 5 V(6) IPH Reverse Voltage Capacitance MAX UNITS — V 30 nA 920 " Reception Angle @ 1/2 Power Photo Current TYP nm +/-60 Degrees 30 — µA VR = 3 V C 20 pF Rise Time VR = 5 V, RL = 1 K tr 50 ns Fall Time VR = 5 V, RL = 1 K tf 50 ns TYPICAL PERFORMANCE CURVES 120 Wavelength = 940 nm TA = 25˚C 100 0.8 ISC - SHORT CIRCUIR CURRENT S (!)rel - RELATIVE SPECTRAL SENSITIVITY 1.0 0.6 0.4 0.2 80 60 40 20 0 700 800 900 1000 1100 0 0 !#- WAVELENGTH (nm) Fig. 1 Relative Spectral Sensitivity vs. Wavelength 2 of 3 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Ee - IRRADIANCE (mW/cm2) Fig. 2 Short Circuit Current vs. Irradiance 100032A QSE773 PLASTIC SILICON PIN PHOTODIODE 100 1000 f = 1 MHz E=0 VR = 10 V E=0 IR - DARK CURRENT (nA) CAPACITANCE (pF) 80 60 40 20 0 0.01 100 10 1 0.1 1 10 100 0 10 20 30 VR - REVERSE VOLTAGE (V) 40 50 60 70 80 90 100 TA -TEMPERATURE (˚C) Fig. 3 Capacitance vs. Reverse Voltage Fig. 4 Dark Current vs. Temperature 1200 IR -DARK CURRENT (pA) E=0 1000 800 600 400 200 0 0 2 4 6 8 10 12 14 16 18 20 VR - REVERSE VOLTAGE (V) Fig. 5 Dark Current vs. Reverse Voltage 3 of 3 100032A