EFM101 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION EFM106 SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.057 gram DO-214AC MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 0.067 (1.70) 0.051 (1.29) 0.110 (2.79) 0.086 (2.18) 0.180(4.57) 0.160(4.06) 0.012 (0.305) 0.006 (0.152) 0.091 (2.31) 0.067 (1.70) 0.059 (1.50) 0.035 (0.89) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. 0.008 (0.203) 0.004 (0.102) 0.209 (5.31) 0.185 (4.70) Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) SYMBOL EFM101 EFM102 EFM103 EFM104 EFM105 EFM106 UNITS Maximum Recurrent Peak Reverse Voltage RATINGS VRRM 50 100 150 200 300 400 Volts Maximum RMS Volts VRMS 35 70 105 140 210 280 Volts VDC 50 100 150 200 300 400 Volts Maximum DC Blocking Voltage Maximum Average Forward Current at T A = 55 oC IO Peak Forward Surge Current I FM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) 1.0 30 I FSM CJ Operating and Storage Temperature Range Amps 15 T J , T STG Amps 10 pF 0 -65 to + 175 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC SYMBOL VF Maximum DC Reverse Current @T A = 25 o C at Rated DC Blocking Voltage @T A =150 o C Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. IR EFM101 EFM102 EFM103 0.95 EFM104 EFM105 EFM106 1.25 UNITS Volts 5.0 uAmps 50 trr 35 nSec 2001-4 RATING AND CHARACTERISTIC CURVES ( EFM101 THRU EFM106 ) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE trr +0.5A 0 (+) -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1cm SET TIME BASE FOR 5/10 ns/cm 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 1.0 TJ = 25 .1 .01 4 1.0 M10 TJ = 100 10 ~EF TJ = 150 10 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS .1 101 100 TJ = 25 Pulse Width = 300uS 1% Duty Cycle .01 .001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 0 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE 70 60 50 40 TJ = 25 30 20 10 0 JUNCTION CAPACITANCE, (pF) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, (A) 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( EFM INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 0 6 OSCILLOSCOPE (NOTE 1) 10 1 NONINDUCTIVE 1.0 FM (NOTE 2) -0.25A ~E PULSE GENERATOR 05 D.U.T Single Phase Half Wave 60Hz Resistive or Inductive Load M1 (+) 25 Vdc (approx) (-) (-) 2.0 EF 10 NON-INDUCTIVE AVERAGE FORWARD CURENT, (A) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 200 100 60 40 20 10 6 TJ = 25 4 2 1 .1 .5 1 2 5 10 20 50 100 200 400 NUMBER OF CYCLES AT 60Hz .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) RECTRON )