IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single S P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION TO-220 G S G • • • • • • • D D P-Channel MOSFET The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-Channel Power MOSFET’s are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more common N-Channel Power MOSFET’s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. P-Channel Power MOSFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. ORDERING INFORMATION Package TO-220 IRF9Z22PbF SiHF9Z22-E3 IRF9Z22 SiHF9Z22 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Drain-Gate Voltage (RGS = 20 KΩ) Continuous Drain Current SYMBOL VDS VGS VGDR VGS at - 10 V TC = 25 °C TC = 100 °C ID IDM Pulsed Drain Currenta Linear Derating Factor Inductive Current, Clamped L = 100 µH ILM Unclamped Inductive Current (Avalanche Current) IL PD Maximum Power Dissipation TC = 25 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L =100 µH, RG = 25 Ω c. ISD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 0.063" (1.6 mm) from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 WORK-IN-PROGRESS LIMIT - 50 ± 20 - 50 - 8.9 - 5.6 - 36 0.32 - 36 - 2.2 40 - 55 to + 150 300d UNIT V A W/°C A A W °C www.vishay.com 1 IRF9Z22, SiHF9Z22 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 80 Case-to-Sink, Flat, Greased Surface RthCS 1.0 - Maximum Junction-to-Case (Drain) RthJC - 3.1 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VDS VGS = 0 V, ID = - 250 µA - 50 - - V VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V nA VGS = ± 20 V - - ± 500 VDS = max. rating, VGS = 0 V - - - 250 VDS = max. rating x 0,8, VGS = 0 V, TJ =125°C - - - 1000 - 0.28 0.33 Ω 2.3 3.5 - S IGSS IDSS RDS(on) gfs ID = - 5.6 Ab VGS = - 10 V VDS = 2 x VGS, IDS = - 5.6 Ab µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 9 VGS = - 10 V ID = - 9.7 A, VDS = - 0.8 max. rating. see fig. 17 - 480 - - 320 - - 58 - - 17 26 - 4.1 6.2 pF nC Gate-Drain Charge Qgd - 5.7 8.6 Turn-On Delay Time td(on) - 8.2 12 - 57 86 - 12 18 - 25 38 - 4.5 - - 7.5 - - - - 9.7 - - - 39 - - - 6.3 V 56 110 280 ns 0.17 0.34 0.85 µC Rise Time Turn-Off Delay Time Fall Time tr td(off) tf Internal Drain Inductance LD Internal Source Inductance LS VDD = - 25 V, ID = - 9.7 A, RG = 18 Ω, RD = 2.4 Ω, see fig. 16 (MOSFET switching times are essentially independent of operating temperature) Between lead, 6 mm (0.25") from package and center of die contact D ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = - 9.7 A, VGS = 0 Vb TJ = 25 °C, IF = - 9.7 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 IRF9Z22, SiHF9Z22 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 Fig. 3 - Typical Saturation Characteristics Fig. 4 - Maximum Safe Operating Area www.vishay.com 3 IRF9Z22, SiHF9Z22 Vishay Siliconix Fig. 5 - Typical Transconductance vs. Drain Current Fig. 6 - Breakdown Voltage vs. Temperature www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Normalized On-Resistance vs. Temperature Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 IRF9Z22, SiHF9Z22 Vishay Siliconix Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 12 - Maximum Drain Current vs. Case Temperature Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 www.vishay.com 5 IRF9Z22, SiHF9Z22 Vishay Siliconix Fig. 13a - Clamped Inductive Test Circuit Fig. 13b - Clamped Inductive Waveforms Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration Fig. 15a - Unclamped Inductive Test Circuit www.vishay.com 6 Fig. 15b - Unclamped Inductive Load Test Waveforms Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 IRF9Z22, SiHF9Z22 Vishay Siliconix Fig. 16 - Switching Time Test Circuit Fig. 18 - Typical Time to Accumulated 1 % Gate Failure Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 Fig. 17 - Gate Charge Test Circuit Fig. 19 - Typical High Temperature Reverse Bias (HTRB) Failure Rate www.vishay.com 7 IRF9Z22, SiHF9Z22 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % * ISD VGS = - 5 V for logic level and - 3 V drive devices Fig. 20 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91350. www.vishay.com 8 Document Number: 91350 S-Pending-Rev. A, 10-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1