RECTRON P4FMAJ300

TVS
RECTRON
P4FMAJ
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SERIES
GPP TRANSIENT VOLTAGE SUPPRESSOR
400 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
*
*
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Plastic package has underwriters laboratory
Glass passivated chip construction
400 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
DO-214AC
Ratings at 25 o C ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types P4FMAJ6.8 thru P4FMAJ400
Electrical characteristics apply in both direction
MAXIMUM RATINGS (At T A = 25oC unless otherwise noted)
SYMBOL
VALUE
UNITS
Peak Power Dissipation at TA = 25 oC, TP = 1mS ( Note 1 )
P PPM
Minimum 400
Watts
Peak Pulse Current with a 10/1000uS waveform
( Note 1, Fig.3 )
I PPM
SEE TABLE 1
Amps
P M ( AV )
1.0
Watts
I FSM
40
Amps
VF
3.5/6.5
Volts
T J , T STG
-65 to + 175
RATINGS
o
Steady State Power Dissipation at TL = 75 C ( Note 2 )
Peak Forward Surge Current, 8.3mS single half sine wavesuperimposed on rated load ( JEDEC METHOD ) ( Note 3 )
Maximum Instantaneous Forward Voltage at 25A for
unidirectional only ( Note 4 )
Operating and Storage Temperature Range
o
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25 C per Fig.2.
2. Mounted on 0.2 X 0.2” (5.0 X 5.0mm) copper pad to each terminal.
3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.
4. VF = 3.0V max. for devices of V(BR) < 200V and VF = 5.0V max. for devices of V(BR) > 200V.
0
C
1998-8
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