RECTRON P6FMBJ300

TVS
RECTRON
P6FMBJ
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SERIES
GPP TRANSIENT VOLTAGE SUPPRESSOR
600 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
*
*
*
*
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Plastic package has underwriters laboratory
Glass passivated chip construction
600 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
DO-214AA
Ratings at 25 o C ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types P6FMBJ6.8 thru P6FMBJ400
Electrical characteristics apply in both direction
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted)
SYMBOL
VALUE
UNITS
Peak Power Dissipation with a 10/1000uS (Note 1,2 Fig.1)
P PPM
Minimum 600
Watts
Peak Pulse Durrent with a 10/1000uS waveform
( Note 1, Fig.3 )
I PPM
SEE TABLE 1
Amps
P M ( AV )
5.0
Amps
I FSM
100
Amps
VF
SEE NOTE 4
Volts
T J , T STG
-55 to + 150
RATINGS
o
Steady State Power Dissipation at TL = 75 C ( Note 2 )
Peak Forward Surge Current, 8.3mS single half sine wave superimposed on rated load (Jedec Method)(Note 3,2) unidirectional only
Maximum Instantaneous Forward Voltage at 50A for
unidirectional only ( Note 3,4 )
Operating and Storage Temperature Range
o
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25 C per Fig.2.
2. Mounted on 0.2 X 0.2” ( 5.0 X 5.0mm ) copper pad to each terminal.
3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.
4. VF = 3.5V on P6FMBJ6.8 thru P6FMB90 devices and VF = 5.0V on P6FMBJ100 thur P6FMBJ400 devices.
0
C
1998-8
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