RS801M RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION RS807M SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes FEATURES Low leakage Low forward voltage Mounting position: Any Surge overload rating: 200 amperes peak Ideal for printed circuit boards High forward surge current capability RS-8M MECHANICAL DATA .189 (4.8) .150 (3.8) 1.169 (29.7) .134 (3.4) .197 (5) 1.193 (30.3) .165 (4.2) .150 (3.8) .708 (18.0) .669 (17.0) .106 (2.7) .096 (2.3) .094 (2.4) .078 (2.0) .173 (4.4) .800 (20.3) .697 (17.7) .441 (11.2) .425 (10.8) * UL listed the recognized component directory, file #E94233 * Epoxy: Device has UL flammability classification 94V-O f.134 (3.1) .122 (3.1) * * * * * * .114 (2.9) .098 (2.5) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .043 (1.1) .031 (0.8) Ratings at 25 o C ambient temperature unless otherwise specified. .035 (0.9) .023 (0.6) Single phase, half wave, 60 Hz, resistive or inductive load. .402 (10.2) .303 (7.7) .386 (9.8) .287 (7.3) For capacitive load, derate current by 20%. .303 (7.7) .287 (7.3) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) SYMBOL RATINGS RS801M RS802M RS803M RS804M RS805M RS806M RS807M UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 Maximum RMS Bridge Input Voltage VRMS Maximum DC Blocking Voltage VDC o Maximum Average Forward Rectified Output Current at Tc = 75 C Peak Forward Surge Current 8.3 ms single half sine-wave 100 200 400 600 35 70 140 280 420 50 100 200 400 600 800 1000 Volts 560 700 Volts 800 1000 Volts IO 8.0 Amps I FSM 200 Amps T J, T STG -55 to + 150 superimposed on rated load Operating and Storage Temperature Range 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS SYMBOL Maximum Forward Voltage Drop per element at 8.0A DC Maximum Reverse Current at Rated @T A = 25 oC DC Blocking Voltage per element @T C = 100 oC VF RS801M RS802M RS803M RS804M RS805M RS806M RS807M UNITS 1.1 Volts 10 uAmps 0.2 mAmps IR 2001-5 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 POWER DISSIPATION 28 10 5 2 TC = 150 (TYP) TC = 25 (TYP) 1 0.5 0.2 0.1 20 16 12 8 4 pulse test per one diode 0 0.4 0.6 0.8 1 sine wave Tj=150 24 POWER DISSIPATION PF(W) INSTANTANEOUS FORWARD CURRENT, (A) RATING AND CHARACTERISTIC CURVES (RS801M THRU RS807M) 1.2 INSTANTANEOUS FORWARD VOLTAGE, (V) 0 2 3 260 IFSM AVERAGE FORWARD CURRENT, (A) sine wave 0 200 8.3ms 8.3ms 1 cycle non-repetitive Tj=25 100 5 10 20 50 10 12 14 on glass-epoxi substrate P.C.B soldering land 5mmf sine wave R-load free in air 1 0 0 100 40 80 120 AMBIENT TEMPERATURE, ( NUMBER OF CYCLE 160 ) TYPICAL FORWARD CURRENT DERATING CURVE 9 AVERAGE FORWARD CURRENT, (A) 2 8 2 0 1 6 TYPICAL FORWARD CURRENT DERATING CURVE SURGE FORWARD CURRENT CAPABILITY PEAK FORWARD SURGE CURRENT, (A) 4 AVERAGE RECTIFIED FORWARD CURRENT, Io (A) heatsink Tc Tc 8 7 6 sine wave R-load on heatsink 5 4 3 2 1 0 0 25 50 75 100 125 CASE TEMPERATURE, ( 150 175 ) RECTRON