RF2114 2 MEDIUM POWER LINEAR AMPLIFIER Typical Applications • Portable Battery-Powered Equipment • Digital Communication Systems • Spread-Spectrum Communication Systems • Commercial and Consumer Systems 2 POWER AMPLIFIERS • Driver for Higher Power Linear Applications • Base Station Equipment Product Description The RF2114 is a medium to high power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 1MHz and 600MHz. It may also be used as a driver amplifier in higher power applications. The device is selfcontained with the exception of the output matching network, power supply feed line, and bypass capacitors. The device can be used in 3-cell battery applications. The maximum CW output at 3V is 125mW. The unit has a total gain of 35dB, depending upon the output matching network. 0.156 0.148 ! Si Bi-CMOS GaAs HBT GaAs MESFET SiGe HBT Si CMOS 0.010 0.004 0.347 0.339 0.050 0.252 0.236 0.059 0.057 8° MAX 0° MIN 0.0500 0.0164 Optimum Technology Matching® Applied Si BJT .018 .014 0.010 0.007 Package Style: SOIC-14 Features • 1MHz to 600MHz Operation RF1 IN 1 14 RF2 OUT GND 2 13 RF2 OUT GND 3 12 GND PD 4 11 GND RF2 IN 5 10 GND 9 RF2 OUT 8 RF2 OUT • Over 800mW CW Output Power • 35dB Small Signal Gain PRE AMP • Single 2.7V to 6.5V Supply • 45% Efficiency • Digitally Controlled Power Down Mode PA RF1 OUT 6 VCC1 7 BIAS CIRCUIT Functional Block Diagram Rev A5 001222 Ordering Information RF2114 RF2114 PCBA Medium Power Linear Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-33 RF2114 Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Supply Voltage Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR Operating Ambient Temperature Storage Temperature Parameter Rating Unit -0.5 to +8.5 -0.5 to +5.0 500 +12 20:1 -40 to +85 -40 to +150 VDC V mA dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25°C, VCC =5.8V, VPD =4.0 V, ZLOAD =18Ω, PIN =6dBm, Freq=150MHz Overall Frequency Range Saturated Output Power Output Power Power Gain CW Total Efficiency Two Tone Total Efficiency IM3 IM5 Second Harmonic Third Harmonic Output Noise Power Input VSWR Condition +28 30 -50 -70 1 to 600 +29 >+27 36 45 26 -40 -43 -24 -30 <-125 <3:1 +31 40 -25 -30 MHz dBm dBm dB % % dBc dBc dBc dBc dBm/Hz Frequency>450MHz POUT = +19dBm/tone POUT = +19dBm/tone POUT = +19dBm/tone Without external second harmonic trap Input Impedance 50 Ω Load Impedance 18+j0 Ω With external matching network; see application schematic With external matching network; see application schematic Load impedance for optimal match V V Voltage supplied to the input; Part is “ON” Voltage supplied to the input; Part is “OFF” Power Down Control Power Down “ON” Power Down “OFF” VCC 0 0.2 Power Supply Power Supply Voltage Power Supply Idle Current Supply Current VPD Current Total "OFF" Current Drain Turn-on Time 2-34 150 2.7 to 6.5 45 300 <3.5 90 500 10 <100 V mA mA mA µA ns Total of pins 5 and 6 Into pin 4 VPD < 0.1VDC VPD =0 to VPD =+4VDC Rev A5 001222 RF2114 Function RF1 IN 2 GND 3 4 GND PD 5 RF2 IN 6 RF1 OUT 7 VCC1 8 RF2 OUT 9 10 11 12 13 14 RF2 OUT GND GND GND RF2 OUT RF2 OUT Rev A5 001222 Description Interface Schematic RF input pin. This pin is internally connected to the bias circuits. An external DC blocking capacitor is required. The value of this capacitor depends on the actual operating frequency. Ground connection. Keep the connection to the backside ground plane as short as possible, by placing the vias close to the pin. Same as pin 2. 2 Power down control voltage. When this pin is at 0V, the device will be in power down mode, dissipating minimum DC power. When this pin is at VCC (but not higher than 5.0V max), the device will be in full power mode delivering maximum gain and output power capability. This pin may also be used to perform some degree of gain control or power control when set to voltages between 0V and VCC or 5.0V, whichever is the lowest. It is not optimized for this function so the transfer function is not linear over a wide range as with other devices specifically designed for analog gain control. However, it may be usable for coarse adjustment or in some closed loop AGC systems. This pin should not, in any circumstance, be higher in voltage than VCC. This pin should also have an external bypassing capacitor. RF input of the power stage. This pin is internally connected to the bias circuits. An external DC blocking capacitor is required. This same capacitor can also be used for interstage matching. Typically this capacitor is between RF2 IN (pin 5) and RF1 OUT (pin 6); see the application schematics for details. RF output of the pre-amplifier. Power supply needs to be supplied to this pin through an inductor to VCC. Together with the series capacitor between pin 5 and 6 the interstage matching circuit is formed. See the application schematics for values for different frequencies. Positive supply for the active bias circuits. This needs to be bypassed with a single capacitor, placed as close as possible to the package. Additional bypassing of 1µF is also recommended, but proximity to the package is not as critical. Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. Pins 8, 9, 13, and 14 are connected internally. Bias for the final power amplifier output transistor must also be provided through one of these two pins. Typically, pins 8 and 9 are connected to a network that provides the DC bias and also creates a second harmonic trap. A capacitor series resonates with internal bond wires and some additional series inductance, and acts as a trap at two times the operating frequency, effectively shorting out the second harmonic. Shorting out this harmonic serves to increase the amplifier’s maximum output power and efficiency, as well as to lower the level of the second harmonic output. Typically, pins 13 and 14 are externally connected very close to the package and used as the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC blocking at the output. Same as pin 8. POWER AMPLIFIERS Pin 1 Same as pin 2. Same as pin 2. Same as pin 2. Same as pin 8. Same as pin 8. 2-35 RF2114 Application Schematic for 150MHz Operation 50 Ω µstrip 330 pF 100 nH RF INPUT 6.8 pF POWER AMPLIFIERS 2 P1-3 1 14 2 13 22 nH 330 pF 50 Ω µstrip RF OUTPUT PRE AMP 3 12 4 11 24 pF 120 pF 1 nF 5 10 PA 6 1200 nH 9 BIAS CIRCUIT 7 8 5.6 nH 330 pF 150 nH 33 pF P1-1 10 µF 10 nF 22 nH 330 pF 330 pF Application Schematic for 450MHz Operation 50 Ω µstrip 20 pF 33 nH 22 Ω RF INPUT 1 14 6.8 nH 150 pF 50 Ω µstrip RF OUTPUT 2 P1-3 100 pF 13 PRE AMP 3 12 4 11 9.1 pF 4.3 pF 5 Designed for V CC = 5 V VPC = 5 V POUT = 500 mW 10 PA 6 200 Ω 12 nH 7 9 BIAS CIRCUIT 8 1.8 nH 100 pF 4.3 pF 10 nH P1-1 10 µF 2-36 10 nF 330 pF 100 pF Rev A5 001222 RF2114 Evaluation Board Schematic (150MHz) (Download Bill of Materials from www.rfmd.com.) 2114400 Rev A 136 MHz to 178 MHz 50 Ω µstrip C1 330 pF L1 100 nH L2 22 nH 1 C2 6.8 pF P1-3 C6 1 nF C3 120 pF 2 12 4 11 10 P1 PA 6 L4 150 nH P1-1 9 BIAS CIRCUIT 8 J2 RF OUT C4 24 pF 13 PRE AMP 3 7 50 Ω µstrip 14 5 L3 1200 nH C5 330 pF L6 5.6 nH L5 22 nH P1-3 1 VCC 2 GND 3 PC C9 33 pF P1-1 C12 10 nF C11 10 µF Rev A5 001222 C7 330 pF C10 1 nF 2 POWER AMPLIFIERS J1 RF IN C8 330 pF 2-37 RF2114 Evaluation Board Layout 2” x 3” POWER AMPLIFIERS 2 2-38 Rev A5 001222