RF2155 2 3V PROGRAMMABLE GAIN POWER AMPLIFIER Typical Applications • Analog Communication Systems • Driver Stage for Higher Power Applications • 900MHz Spread Spectrum Systems • 3V Applications 2 Product Description POWER AMPLIFIERS • 400MHz Industrial Radios -A- The RF2155 is a 3V medium power programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz. The device is self-contained with the exception of the output matching network and power supply feed line. A two-bit digital control provides 4 levels of power control, in 8dB steps. 0.009 0.004 0.158 0.150 0.021 0.014 0.069 0.064 0.392 0.386 0.244 0.230 0.050 0.060 0.054 8° MAX 0° MIN 0.035 0.016 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS 0.010 0.008 Package Style: Standard Batwing Features • Single 3V Supply NC 1 16 G16 • 500mW CW Output Power VCC1 2 15 G8 • 31dB Small Signal Gain VCC2 3 14 RF OUT • Up to 60% Efficiency GND 4 13 GND • Digitally Controlled Output Power GND 5 12 GND • 430MHz to 930MHz Frequency Range GND1 6 11 RF OUT RF IN 7 10 NC PD 8 9 NC Functional Block Diagram Rev B3 010417 Ordering Information RF2155 RF2155 PCBA 3V Programmable Gain Power Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-179 RF2155 Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Supply Voltage Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Parameter Rating Unit -0.5 to +5.5 -0.5 to +3.3 500 +10 10:1 -30 to +85 -40 to +150 VDC V mA dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25 °C, VCC =3.6V, VPD =3.0V, ZLOAD =13Ω, PIN =0dBm, Freq=915MHz Overall Frequency Range Maximum CW Output Power Small Signal Gain Second Harmonic Third Harmonic Fourth Harmonic Input VSWR CW Efficiency Output Load VSWR Condition 50 6:1 430 to 930 450 300 31 -30 -40 -36 2:1 56 MHz mW mW dB dBc dBc dBc % VCC =3.6V VCC =3.0V Without external second harmonic trap All gain settings G16=“high”, G8=“high”, PIN =0dBm Spurious<-60dBc Power Control Power Down “ON” Power Down “OFF” PD Input Current G16, G8 “ON” G16, G8 “OFF” G16, G8 Input Current Output Power 2.7 0 2.2 0 0.8 +25.5 +16.0 +8.0 -1.0 2.8 0.5 3.7 2.5 0.3 1.0 +26.5 +18.5 +10.5 +1.5 Turn On/Off Time 3.0 0.8 5.0 3.0 0.5 1.6 +28.0 +21.0 +13.0 +4.0 100 V V mA V V mA dBm dBm dBm dBm ns Voltage supplied to the input Voltage supplied to the input Only in “ON” state Voltage supplied to the input Voltage supplied to the input Only in “ON” state G16=“high”, G8=“high”, PIN =0dBm G16=“high”, G8=“low”, PIN =0dBm G16=“low”, G8=“high”, PIN =0dBm G16=“low”, G8=“low”, PIN =0dBm 5.0 300 115 55 35 110 10 V V mA mA mA mA mA µA Specifications Operating limits G16=“high”, G8=“high”, PIN =0dBm G16=“high”, G8=“low”, PIN =0dBm G16=“low”, G8=“high”, PIN =0dBm G16=“low”, G8=“low”, PIN =0dBm G16=“high”, G8=“high”, No RF In G16=“low”, G8=“low”, PD=“low” Power Supply Power Supply Voltage 3.6 3.0 Power Supply Current 20 2-180 225 90 37 25 50 1 Rev B3 010417 RF2155 Function NC VCC1 3 VCC2 4 GND 5 6 GND GND1 7 RF IN 8 PD 9 10 11 12 13 14 15 NC NC RF OUT GND GND RF OUT G8 Rev B3 010417 Description Interface Schematic Not internally connected. Positive supply for the first stage (driver) amplifier. This is an unmatched transistor collector output. This pin should see an inductive path to AC ground (VCC with a UHF bypassing capacitor). This inductance can be achieved with a short, thin microstrip line (approximately equivalent to 0.4nH). At lower frequencies, the inductance value should be larger (longer microstrip line) and VCC should be bypassed with a larger bypass capacitor. This inductance forms a matching network with the amplifier stages, setting the amplifier's frequency of maximum gain. An additional 1µF bypass capacitor in parallel with the UHF bypass capacitor is also recommended, but placement of this component is not as critical. A resistor of 39Ω from this pin to pin 3 is necessary to ensure stability under extreme output VSWR conditions. Positive supply for the bias circuits. This pin should be bypassed with a single UHF capacitor, placed as close as possible to the package. Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance. Same as pin 4. Ground return for the first stage; this should be connected to a via very close to the device. Amplifier RF input. This is a 50Ω RF input port to the amplifier. To improve the input match over all four gain control settings, an input inductor of 6.8nH should be added. The amplifier does not contain internal DC blocking and, therefore, should be externally DC blocked before connecting to any device which has DC present or which contains a DC path to ground. A series UHF capacitor is recommended for the DC blocking. Power down control voltage. When this pin is at 0V, the device will be in power down mode, dissipating minimum DC power. When this pin is at 3V the device will be in full power mode delivering maximum available gain and output power capability. This pin should not, in any circumstance, be higher than 3.3V. This pin should also have an external UHF and HF bypassing capacitor. VCC1 RF IN From Bias Stages 2 POWER AMPLIFIERS Pin 1 2 See pin 2. PD To RF Stages Not internally connected. Not internally connected. Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. It is internally connected to pins 11 and 14 to provide low series inductance and flexibility in output matching. Bias for the final power amplifier output transistor must also be provided through one of these pins. Typically, pin 14 is used to supply bias. A transmission line of approximately 500mils length, followed by a bypass capacitor, is adequate. This pin can also be used to create a second harmonic trap. A UHF and large tantalum (1µF) capacitor should be placed on the power supply side of the bias inductor. Pin 11 should be used for the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC blocking at the output. Same as pin 4. RF OUT From Bias Stages Same as pin 4. Same as pin 11. RF output power gain control 8dB bit (see specification table for logic). The control voltage at this pin should never exceed 3.3V and a logic high should be at least 2.7V. This pin should also have an external UHF bypassing capacitor. VCC2 Gxx To RF Stages 2-181 RF2155 Pin 16 Function G16 Description Interface Schematic RF output power gain control 16dB bit (see specification table for logic). The control voltage at this pin should never exceed 3.3V and a logic high should be at least 2.7V. This pin should also have an external UHF bypassing capacitor. Same as pin 15. Application Schematic 915 MHz POWER AMPLIFIERS 2 33 pF VCC 1 16 2 15 33 pF 16 dB Ctrl W=20, L=180 mil 33 pF Board Material: FR-4 (Er=4.7) h=30 mil 39 Ω W=20, L=570 mil 3 14 4 13 5 12 6 11 8 dB Ctrl VCC 33 pF 33 pF Impedances are critical at pin 2, 7, 11, and 14 W=55, L=330 mil 33 pF 6.8 nH 50 Ω 33 pF RF Out 3.9 pF RF In Power Down 7 10 8 9 33 pF 2-182 Rev B3 010417 RF2155 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1-1 P1-3 P2 1 VB2 2 GND 3 PD P2-1 P2-3 1 VCC 2 GND 3 VB1 2 POWER AMPLIFIERS P1 2155400 Rev - C14 1 µF P2-1 C13 1 µF C6 1 nF C5 33 pF R1 39 Ω C4 33 pF RF IN J1 50 Ω µ strip C1 33 pF L1 6.8 nH P1-3 C9 1 nF Rev B3 010417 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 C7 33 pF C12 1 nF L=570 mil, W=20 mil C8 33 pF P2-3 P1-1 C2 33 pF L=330 mil, W=55 mil C2 33 pF 50 Ω µ strip RF OUT J2 C10 3.9 pF C3 33 pF 2-183 RF2155 Evaluation Board Layout Board Size 2.0” x 2.0” POWER AMPLIFIERS 2 2-184 Rev B3 010417 RF2155 Pout and Icc vs. Pin, State 11 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) 30 Pout and Icc vs. Pin, State 10 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) 300 25 300 Pout Pout 20 250 15 150 10 15 200 10 150 5 100 0 50 100 5 50 -15 -10 -5 0 5 -5 10 0 -20 -15 -10 Pin (dBm) 5 10 Pout and Icc vs. Pin, State 01 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) 20 300 10 250 5 300 Pout Pout 15 250 Icc Icc -5 150 100 -10 100 50 -15 50 0 -20 5 150 0 -5 -10 -10 -5 0 5 Pout (dBm) 200 200 Icc (mA) 0 10 -15 0 Pin (dBm) Pout and Icc vs. Pin, State 01 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) -20 -5 0 -20 10 Icc (mA) -20 Pout (dBm) 2 -15 -10 Pin (dBm) -5 0 5 10 Pin (dBm) Pout and Efficiency vs. Vcc, Full Gain (915 MHz, Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) Pout vs. Temperature, All Gain Settings (Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) 30 60.0 30 Bit1=1;Bit2=1 Pout Efficiency 25 29 57.0 20 27 51.0 Pout (dBm) 54.0 Efficiency (%) Pout (dBm) Bit1=1;Bit2=0 28 15 10 Bit1=0;Bit2=1 5 26 48.0 Bit1=0;Bit2=0 0 25 45.0 3.0 3.5 4.0 4.5 Vcc (Volts) Rev B3 010417 5.0 5.5 -5 -25 -5 15 35 55 75 95 Temperature (°C) 2-185 POWER AMPLIFIERS 200 Icc (mA) 20 250 Icc Pout (dBm) Icc Icc (mA) Pout (dBm) 25 RF2155 Pout vs. Frequency, All Gain Settings (Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) Icc vs. Frequency, All Gain Settings (Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) 30 250 Bit1=1;Bit2=1 Bit1=1;Bit2=1 25 200 20 Bit1=1;Bit2=0 150 15 10 Icc (mA) Pout (dBm) POWER AMPLIFIERS 2 Bit1=0;Bit2=1 100 Bit1=1;Bit2=0 50 Bit1=0;Bit2=1 5 Bit1=0;Bit2=0 0 Bit1=0;Bit2=0 -5 870 880 890 900 910 920 Frequency (MHz) 2-186 930 940 950 960 0 870 880 890 900 910 920 930 940 950 960 Frequency (MHz) Rev B3 010417