RF2157 2 PCS CDMA/TDMA 3V POWER AMPLIFIER Typical Applications • Spread-Spectrum Systems • 3V 1750-1780MHz CDMA PCS Handsets • Commercial and Consumer Systems • 3V TDMA PCS Handsets • Portable Battery-Powered Equipment Product Description 2 0.45 0.28 3.75 The RF2157 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA and TDMA handheld digital equipment, spread-spectrum systems, and other applications in the 1710MHz to 1910MHz band. The device is packaged in a compact 4mmx4mm LCC, as well as a 4mmx4mm MLF (micro leaded package). The frequency response can be optimized for linear performance over 1710MHz to 1910MHz. The device features a digital mode switch which can be used to minimize operating current under low output power conditions. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü 2 GaAs HBT GaAs MESFET SiGe HBT Si CMOS 1 0.80 TYP 0.75 0.50 3.75 + 1 1.60 4.00 12° 1.50 SQ INDEX AREA 3 3.20 0.75 0.65 4.00 1.00 0.90 0.05 0.00 NOTES: 1 Shaded Pin is Lead 1. 2 Dimensions in mm. Dimension applies to plated terminal and is measured between 0.10 mm and 0.25 mm from terminal tip. The terminal #1 identifier and terminal numbering convention 3 shall conform to JESD 95-1 SPP-012. Details of terminal #1 identifier are optional, but must be located within the zone indicated. The identifier may be either a mold or marked feature. 4 5 Pins 1 and 9 are fused. Package Warpage: 0.05 max. Package Style: LCC, 16-Pin, 4x4 Features GND RF IN NC NC NC • Single 3V Supply 1 16 15 14 13 • 29dBm Linear Output Power • 24dB Linear Gain VPD1 2 12 VCC1 MODE 3 11 VCC1 VPD2 4 10 VCC • 35% Linear Efficiency • On-board Power Down Mode • 1750MHz to 1910MHz Operation 9 GND 8 RF OUT 7 RF OUT 6 NC GND 5 Functional Block Diagram Rev A19 010611 Ordering Information RF2157 RF2157 PCBA PCS CDMA Power Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-187 POWER AMPLIFIERS • 3V 1850-1910MHz CDMA PCS Handsets RF2157 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤31dBm) Mode Voltage (VMODE) POWER AMPLIFIERS 2 Control Voltage (VPD) Input RF Power Operating Case Temperature Storage Temperature Parameter Rating Unit +8.0 +4.5 +3.5 VDC VDC VDC +3.5 +12 -30 to +110 -65 to +150 VDC dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25°C, VCC =3.4 V, VPD =2.8V, POUT =29dBm, unless otherwise specified Overall Usable Frequency Range Typical Frequency Range Linear Gain Small Signal Gain Second Harmonic (Including second harmonic trap) Third Harmonic Fourth Harmonic 1750 23 22 22 1910 1750-1780 1850-1910 25 24 27 -35 28 26 29 -40 -45 MHz MHz MHz dB dB dB dBc Linear Efficiency VMODE ≥2.5V 29 28 33 CDMA ACPR @ 1.25MHz Noise Power @ 80MHz Offset dBm dBm % 37 6 -46 -139 VCC =3.0V POUT =16dBm -44 dBc dBm/Hz VMODE ≤0.5V CDMA Linear Output Power Linear Efficiency CDMA ACPR @ 1.25MHz Noise Power @ 80MHz Offset Tuned Matching Network Tuned Matching Network POUT =29dBm, VMODE ≤ 0.5V POUT =29dBm, VMODE ≥2.5V PIN ≤-20dBm dBc dBc CDMA Linear Output Power Condition 29 30 35 -46 -139 -44 37 -31 -52 < 2:1 -28 -48 dBm % dBc dBm/Hz TDMA Linear Efficiency TDMA ACPR @ 30kHz Offset TDMA ACPR @ 60kHz Offset Input VSWR Output Load VSWR Stability Junction to Case Thermal Resistance 2-188 30 % dBc dBc 10:1 No damage. 5:1 25 °C/W Rev A19 010611 RF2157 Parameter Specification Min. Typ. Max. Unit Condition Power Supply VPD Current Turn On/Off Time Total Current (Power Down) VPD Low Voltage VPD High Voltage MODE High Voltage MODE Low Voltage Rev A19 010611 110 7 2.7 2.5 3.4 325 140 0 2.8 2.8 0 4.5 175 9 V mA mA mA 100 10 0.2 2.9 ns µA V V VMODE ≤ 0.5V VMODE =2.8V VCC =3.4V, VPD =2.8V, VMODE =2.8V No RF input power applied. 2 POWER AMPLIFIERS Power Supply Voltage Idle Current VPD ≤0.2V R1 =1kΩ 0.5 2-189 RF2157 Pin 1 2 Function GND VPD1 3 MODE 4 VPD2 5 GND 6 NC 7 RF OUT 8 9 10 RF OUT GND VCC 11 VCC1 12 13 VCC1 NC 14 NC 15 NC 16 RF IN POWER AMPLIFIERS 2 Description Interface Schematic This pin is internally grounded to the die flag. Power down control for first stage. When this pin is “low”, first stage circuits are shut off. When this pin is 2.8V, all first stage circuits are operating normally. VPD1 requires a regulated 2.8V for the amplifier to operate properly over all specified temperature and voltage ranges. A dropping resistor from a higher regulated voltage may be used to provide the required 2.8V. For full power operation, VMODE is set low. VMODE will reduce the bias current by approximately 50% when set HIGH. Large Signal Gain is reduced approximately 1.5dB at 29dBm POUT. Small Signal Gain is reduced by approximately 6dB at lower temperatures. An external series resistor is optional to limit the amount of current required. Power down control for the second stage. When this pin is “low”, the second stage circuit is shut off. When this pin is 2.8V, the second stage circuit is operating normally. VPD requires a regulated 2.8V for the amplifier to operate properly over all specified temperature and voltage ranges. A dropping resistor from a higher regulated voltage may be used to provide the required 2.8V. A 15pF high frequency bypass capacitor is recommended. Connect to ground plane via 15nH inductor. DC return for the second stage bias circuit. This pin is internally a no connection. It is recommended that this pin be connected to either the RF output matching network or to the ground plane. RF output and power supply for final stage. This is the unmatched colRF OUT lector output of the second stage. A DC block is required following the matching components. The biasing may be provided via a parallel L-C set for resonance at the operating frequency of 1710MHz to 1910MHz. It is important to select an inductor with very low DC resistance with a From Bias 1A current rating. Alternatively, shunt microstrip techniques are also Network applicable and provide very low DC resistance. Low frequency bypassing is required for stability. Same as pin 7. See pin 7. This pin is internally grounded to the die flag. Supply for bias reference and control circuits. High frequency bypassing may be necessary. Power supply for first stage and interstage match. Pins 11 and 12 should be connected by a common trace where the pins contact the printed circuit board. Same as pin 11. This pin is internally a no connection. It is recommended that this pin be connected to either VCC1 or to the ground plane. It is recommended that these pins be connected to the ground plane for improved isolation between RF IN (pin 16) and the VCC1 pins (pins 11 and 12). It is recommended that these pins be connected to the ground plane for improved isolation between RF IN (pin 16) and the VCC1 pins (pins 11 and 12). RF input. An external 15pF series capacitor is required as a DC block. In addition, a series transmission line and shunt capacitor, 5pF, are required to provide 2:1 VSWR. VCC1 15 pF RF IN 5 pF Pkg Base 2-190 GND From GND1 Bias Stages Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane. Rev A19 010611 RF2157 Application Schematic Korea - CDMA RF IN Bypassing for VREG1 and V REG2 C5 15 pF Matching network for optimum input return loss C24 4.7 pF Interstage tuning for centering frequency response 2 POWER AMPLIFIERS RF Choke - Bias inductor for the amplifier interstage TL4 R12 Jumper C27 15 pF 1 16 15 14 13 VREG R11 Jumper R1 1 kΩ VMODE C13 15 pF Bias return L4 15 nH Matching network for optimum load impedance 2 12 3 11 4 10 5 6 7 C1 4.7 pF 8 TL1 C3 15 pF Pins 1 and 9 are internally grounded to the die flag. Board CDMA (Korea) C30 (pF) 10 Rev A19 010611 C1 (pF) 4.7 L1 (nH) 12 C14 (pF) 2.2 RF OUT Bypassing for V CC C8 10 nF L2 8.2 nH VCC C6 15 pF L1 12 nH C7 1.5 pF TL2 C14 2.2 pF 9 C30 11 pF C4 15 pF C28 10 nF * L1 is a High Q inductor (i.e., Coilcraft 0805HQ-series). **C1 and C14 are High Q capacitors (i.e., Johanson C-series). Transmission Line Length TL1 TL2 TL3 TL4 CDMA (Korea) 30-40 mils 150 mils 20-30 mils 200 mils 2-191 RF2157 Application Schematic US - CDMA RF IN Bypassing for VREG1 and V REG2 2 C5 15 pF Matching network for optimum input return loss C24 4.7 pF Interstage tuning for centering frequency response POWER AMPLIFIERS RF Choke - Bias inductor for the amplifier interstage TL4 R12 Jumper C27 15 pF 1 16 15 14 13 VREG R11 Jumper R1 1 kΩ VMODE C13 15 pF Bias return L4 15 nH Matching network for optimum load impedance 2 12 3 11 4 10 5 6 7 C1 4.7 pF 8 TL1 C3 15 pF Pins 1 and 9 are internally grounded to the die flag. Board CDMA (US) C30 (pF) 10 C1 (pF) 4.7 L1 (nH) 12 C14 (pF) 2.2 RF OUT L2 8.2 nH VCC C6 15 pF C4 15 pF C28 10 nF * L1 is a High Q inductor (i.e., Coilcraft 0805HQ-series). **C1 and C14 are High Q capacitors (i.e., Johanson C-series). Transmission Line Length CDMA (US) 2-192 Bypassing for V CC C8 10 nF L1 12 nH C7 1.5 pF TL2 C14 2.2 pF 9 C30 9.1 pF TL1 TL2 TL3 TL4 30-40 mils 150 mils 20-30 mils 200 mils Rev A19 010611 RF2157 Evaluation Board Schematic Korea - CDMA (Download Bill of Materials from www.rfmd.com.) RF IN C5 15 pF 2 POWER AMPLIFIERS C24 4.7 pF TL4 C26 1 µF R12 Jumper C27 15 pF 1 16 15 14 13 P2-1 R11 Jumper R1 1 kΩ P2-2 P1 P1-1 1 VCC 2 GND C13 15 pF L4 15 nH P2 P2-1 1 VREG P2-2 2 VMODE 2 12 3 11 4 10 5 6 7 C1 4.7 pF 8 TL1 C3 15 pF Pins 1 and 9 are internally grounded to the die flag. Board CDMA (Korea) C30 (pF) 10 Rev A19 010611 C1 (pF) 4.7 L1 (nH) 12 C14 (pF) 2.2 RF OUT TL3 C8 10 nF C25 1 uF L2 8.2 nH P1-1 C6 15 pF L1 12 nH C7 1.5 pF TL2 C14 2.2 pF 9 C30 11 pF C4 15 pF C28 10 nF C2 4.7 uF * L1 is a High Q inductor (i.e., Coilcraft 0805HQ-series). **C1 and C14 are High Q capacitors (i.e., Johanson C-series). Transmission Line Length TL1 TL2 TL3 TL4 CDMA (Korea) 30-40 mils 150 mils 20-30 mils 200 mils 2-193 RF2157 Evaluation Board Schematic US - CDMA RF IN C5 15 pF POWER AMPLIFIERS 2 C24 4.7 pF TL4 C26 1 µF R12 Jumper C27 15 pF 1 16 15 14 13 P2-1 R11 Jumper R1 1 kΩ P2-2 P1 P1-1 1 VCC 2 GND C13 15 pF 2 12 3 11 4 10 5 6 7 8 9 C30 9.1 pF TL3 C8 10 nF C25 1 uF L2 8.2 nH P1-1 C6 15 pF 2157400C L4 15 nH P2 P2-1 1 VREG P2-2 2 VMODE C1 4.7 pF TL1 C7 1.5 pF TL2 C14 2.2 pF C3 15 pF Pins 1 and 9 are internally grounded to the die flag. Board CDMA (US) C30 (pF) 10 C1 (pF) 4.7 L1 (nH) 12 C14 (pF) 2.2 L1 12 nH RF OUT C4 15 pF C28 10 nF * L1 is a High Q inductor (i.e., Coilcraft 0805HQ-series). **C1 and C14 are High Q capacitors (i.e., Johanson C-series). Transmission Line Length CDMA (US) 2-194 C2 4.7 uF TL1 TL2 TL3 TL4 30-40 mils 150 mils 20-30 mils 200 mils Rev A19 010611 RF2157 Evaluation Board Layout Board Size 2" x 2" Board Thickness 0.031”, Board Material FR-4, Multi-Layer POWER AMPLIFIERS 2 Rev A19 010611 2-195 RF2157 POWER AMPLIFIERS 2 2-196 Rev A19 010611