RFMD RF2189

RF2189
Preliminary
2
3V, 2.5GHZ LINEAR POWER AMPLIFIER
Typical Applications
• Commercial and Consumer Systems
• PCS Communication Systems
• Portable Battery-Powered Equipment
• Wireless LAN Systems
• Broadband Spread-Spectrum Systems
2
POWER AMPLIFIERS
• 2.5GHz ISM Band Applications
Product Description
2
The RF2189 is a linear, medium-power, high-efficiency
amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF
amplifier in 2.5GHz spread-spectrum transmitters. The
device is provided in a 16-pin leadless chip carrier with a
backside ground and is self-contained with the exception
of the output matching network and power supply feed
line.
0.45
0.28
3.75
1
0.80
TYP
0.75
0.50
3.75
1
+
1.60 4.00
12°
1.50 SQ
INDEX AREA 3
3.20
0.75
0.65
4.00
1.00
0.90
0.05
0.00
NOTES:
1 Shaded Pin is Lead 1.
2
Dimensions in mm.
Dimension applies to plated terminal and is measured between
0.10 mm and 0.25 mm from terminal tip.
The terminal #1 identifier and terminal numbering convention
3 shall conform to JESD 95-1 SPP-012. Details of terminal #1
identifier are optional, but must be located within the zone
indicated. The identifier may be either a mold or marked
feature.
4
5
Optimum Technology Matching® Applied
ü
Si BJT
Si Bi-CMOS
GaAs HBT
GaAs MESFET
SiGe HBT
Si CMOS
Pins 1 and 9 are fused.
Package Warpage: 0.05 max.
Package Style: LCC, 16-Pin, 4x4
Features
GND
VCC2
VCC2
VCC1
NC
• Single 3.3V Power Supply
1
16
15
14
13
• +25dBm Saturated Output Power
• 20dB Small Signal Gain
• High Power Added Efficiency
Bias
Circuits
12
RF OUT
GND
2
GND
3
11
RF OUT
NC
4
10
NC
Functional Block Diagram
Rev A4 010424
• 1800MHz to 2500MHz Frequency Range
9
GND
8
VPC
7
NC
6
RF IN
NC
5
• Power Down Mode
Ordering Information
RF2189
RF2189 PCBA
3V, 2.5GHz Linear Power Amplifier
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
2-249
RF2189
Preliminary
Absolute Maximum Ratings
Parameter
POWER AMPLIFIERS
2
Supply Voltage
Power Control Voltage (VPC)
DC Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Moisture sensitivity
Parameter
Rating
Unit
-0.5 to +6.0
-0.5 to 3.3
350
+12
-40 to +85
-40 to +150
JEDEC Level 3
VDC
V
mA
dBm
°C
°C
Specification
Min.
Typ.
Max.
Refer to “Handling of PSOP and PSSOP Products”
on page 16-15 for special handling information.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit
T=25 °C, VCC =3.3V, VPC =3.0V, PIN =0dBm,
Freq=2450MHz
Overall
Frequency Range
Maximum Saturated Output
Power
Efficiency at Max Output Power
Small Signal Gain
Reverse Isolation
Condition
+23
1800 to 2500
+24
Second Harmonic
42
20
30
30
-50
IM3
IM5
IM7
Isolation
Input Impedance
Input VSWR
Noise Figure
-30
-35
-48
-30
50
2:1
7
19
-20
+26
MHz
dBm
%
dB
dB
dB
dBc
-23
-30
-35
dBm
dBm
dBm
dBm
Ω
PIN =+6dBm
In “ON” state
In “OFF” state
Including second harmonic trap, see application circuit
POUT =+17dBm in each tone
POUT =+17dBm in each tone
POUT =+17dBm in each tone
In “OFF” state, PIN =0dBm
dB
Power Down
Power Control “ON”
2.7
Power Control “OFF”
PC Input Impedance
0
3.0
V
0.5
V
Voltage supplied to control input; device is
“ON”
Voltage supplied to control input; device is
“OFF”
kΩ
5
Power Supply
Operating Voltage
Current Consumption
180
95
50
Current Consumption
2-250
3.0 to 5.0
260
150
320
175
V
mA
mA
100
<1
150
10
mA
µA
Power Down “ON”, at max output power
Power Down “ON”, two-tone test +20dBm
average output power
Idle current
Power Down “OFF”
Rev A4 010424
RF2189
Preliminary
Function
GND
2
3
4
5
6
GND
GND
NC
NC
RF IN
7
8
NC
PC
Description
Interface Schematic
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance.
Same as pin 1.
Same as pin 1.
Not connected.
2
Not connected.
RF input. This input is DC coupled, so an external blocking capacitor is
required if this pin is connected to a DC path.
Not connected.
See pin 1.
Power control pin. For maximum power this pin should be 3.3V. A
higher voltage is not recommended. For less output power and reduced
idle current this voltage may be reduced.
VCC1
500Ω
PC
9
GND
10
11
NC
RF OUT
12
13
14
RF OUT
NC
VCC1
15
VCC2
To RF
Stages
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance.
Not internally connected.
RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done
through a quarter-wave length microstrip line that is RF grounded at the
other end, or through an RF inductor that supports the required DC currents.
Same as pin 11.
RF OUT
See pin 11.
Not connected.
Power supply pin for the bias circuits. External low frequency bypass
capacitors should be connected if no other low frequency decoupling is
nearby.
Bias supply pin for the first stage. A small tuning capacitor is required to
set the desired frequency response. External low frequency bypass
capacitors should be connected as shown in the application schematic
if no other low frequency decoupling is nearby.
See pin 5.
VCC2
RF IN
BIAS
16
Pkg
Base
VCC2
GND
Rev A4 010424
Connected internally to pin 15.
See pin 15.
Ground connection. The backside of the package should be connected
to the ground plane through a short path, i.e., vias under the device
may be required.
See pin 1 and 6.
2-251
POWER AMPLIFIERS
Pin
1
RF2189
Preliminary
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
C8
10 nF
C2
1 nF
VCCT
2
VCC
POWER AMPLIFIERS
L2
1 kΩ Ferrite
C7
1 µF
C30
9 pF
C26
100 pF
C6
10 pF
1
16
2
15
14
13
Bias
Circuits
12
11
4
10
6
7
8
C4
22 pF
50 Ω µstrip
3
5
L1
3.3 nH
C1
2.2 pF
C3
15 pF
9
P1
P1-1
C13
10 nF
C5
15 pF
C15
22 uF
50 Ω µstrip
J2
RF OUT
1
P2
VPC
2
P1-4
P1-5
P2-2
3
GND
4
VCC
5
VCC
1
GND
2
VPC
CON2
CON5
J1
RF IN
VPC
2-252
Rev A4 010424
RF2189
Preliminary
Evaluation Board Layout
Board Size 2.0” x 2.0”
Board Thickness 0.031”; Board Material FR-4
POWER AMPLIFIERS
2
Rev A4 010424
2-253
RF2189
Preliminary
POWER AMPLIFIERS
2
2-254
Rev A4 010424