RFMD RF2413PCBA

RF2413
• Digital and Spread Spectrum Systems
• CDMA Systems
• Analog Communication Systems
• General Purpose Frequency Conversion
• GSM Systems
• Portable Battery Powered Equipment
The RF2413 is a monolithic integrated transmitter universal modulation IC capable of generating modulated AM,
PM, or compound carriers in the VHF/UHF frequency
range. The modulation is performed at VHF, then the
resulting spectrum is upconverted to a frequency range
between 100MHz and 1000MHz. Up to 60dB of power
control is possible through the use of two gain control
pins. The IC contains all of the required components to
implement the modulation function including differential
amplifiers for the baseband inputs, a 90° hybrid phase
splitter, limiting LO amplifiers, two balanced mixers, a
combining, gain-controlled differential amplifier, a second
balanced mixer, and an output gain-controlled RF amplifier which will drive a 50Ω load.
1
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
5
.493
.486
MODULATORS AND
UPCONVERTERS
.018
.014
.050
.413
.398
8 °MAX
0°MIN
.050
.016
Si BJT
.009
.005
.299
.292
.092
.010
.008
!"
• Single 3V to 6.5V Power Supply
VDD2 1
VDD1 2
POWER
CONTROL
PD 3
20 RF OUT
• Low Broadband Noise Floor
19 GND4
• Excellent Amplitude & Phase Balance
18 GND3
I SIG 4
17 LO2
I REF 5
16 GND2
• Digitally Controlled Power Down
• 30MHz to 100MHz IF Frequency
Σ
Q REF 6
15 MIX IN+
Q SIG 7
14 MIX IN-
GC1 8
GC2 9
13 GND1
-45°
12 MOD OUT-
+45°
LO1 10
• 200MHz to 1000MHz RF Frequency
RF2413
11 MOD OUT+
RF2413 PCBA
Rev B3 990419
Gain Controlled Dual-Conversion Quadrature Modulator
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
5-19
RF2413
Absolute Maximum Ratings
Parameter
Supply Voltage
Input LO and RF Levels
I and Q Modulation Levels
Operating Ambient Temperature
Storage Temperature
Parameter
Rating
Unit
-0.5 to 7.0
+6
VDD
-40 to +85
-40 to +150
VDC
dBm
V
°C
°C
Specification
Min.
Typ.
Max.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit
T = 25°C, VDD =5V, VREF =2.5V,
BB=100kHz, LO1=70MHz, LO2=700MHz,
VMOD =3.0VPP, SSB, unless indicated otherwise.
Modulation Signals (I&Q)
MODULATORS AND
UPCONVERTERS
5
Condition
Frequency Range
Signal Level
Reference Voltage (VREF)
Input Impedance
Amplitude Balance
Quadrature Phase Error
DC to 25
3.0
2.0 to 3.0
3
0.1
1
MHz
VPP
V
kΩ
dB
°
30 to 200
30 to 250
-5 to +6
750-j500
MHz
MHz
dBm
Ω
290-j160
170-j180
6000-j2500
5200-j2800
Ω
Ω
Ω
Ω
100 to 1000
0 to +6
2000-j3000
MHz
dBm
Ω
600-j1400
Ω
+6
+2
-1
75
1.5
dBm
dBm
dBm
dB
V
For 1dB compression
First LO Input
Frequency Range
Power Level
Input Impedance
For 30dB sideband suppression
For 20dB sideband suppression
At 100MHz, without external 50Ω termination
IF Inputs & Outputs (MOD
OUT & MIX IN)
Output Impedance
Input Impedance
At 100MHz
At 200MHz
At 100MHz
At 200MHz
Second LO Input
Frequency Range
Power Level
Input Impedance
At 300MHz, without external 50Ω termination
At 1000MHz, without external 50Ω termination
RF Output
Output Power
-2
Total Gain Control Range
Gain Control Voltage for minimum gain
Gain Control Voltage for maximum gain
Nominal Output Impedance
Output VSWR
Output Broadband Noise Power
5-20
+5
5.0
V
50
1.5:1
3:1
-155
Ω
VDD =6V, LO1,2 power=0dBm, SSB
Freq=200MHz to 500MHz
Freq=500MHz to 800MHz
Freq=800MHz to 1000MHz
Gain 1 and Gain 2
Freq<600MHz
600MHz<Freq<1000MHz
dBm/Hz
Rev B3 990419
RF2413
Spurious
Sideband Suppression
Carrier Suppression
First LO Harmonics
30
20
35
25
dBc
dBc
20
30
dBc
dBc
Single sideband modulation
Unadjusted.
Unadjusted. Modulation DC offset may be
externally adjusted for maximum suppression. Suppression is then typically 40dBc.
Odd unfiltered IF
Even unfiltered IF
<100
>50
VCC
0
ns
kΩ
V
V
Threshold voltage
Threshold voltage
5
3 to 6.5
35
V
V
mA
Power Down
Turn On/Off Time
PD Input Resistance
Power Down “ON”
Power Down “OFF”
Power Supply
Voltage
50
5
MODULATORS AND
UPCONVERTERS
Current Consumption
Specifications
Operating limits
Rev B3 990419
5-21
RF2413
Pin
1
Function
VDD2
2
VDD1
3
PD
MODULATORS AND
UPCONVERTERS
5
4
5
I SIG
I REF
6
Q REF
7
Q SIG
8
GC1
9
5-22
GC2
Description
Interface Schematic
Supply Voltage for the RF Output Stage only. A 33pF external bypass
capacitor is required and an optional 0.1µF will be required if no other
low frequency bypass capacitors are nearby. The trace length between
the pin and the bypass capacitors should be minimized. The ground
side of the bypass capacitors should connect immediately to ground
plane.
Though the part is designed to run from a 5V supply, it will work at 3V.
Gain and available output power will be reduced by 5 to 10dB. This also
means that the part is sensitive to unintended power supply variation.
Power supply voltage should be kept constant, or another way of maintaining constant output power is required.
Supply Voltage for all circuits except the RF Output Stage. The same
comments as for VDD2 apply to this pin.
Power Down control. When this pin is 0V all circuits are turned off, and
when this pin is VDD all circuits are operating. This is a high impedance
input, internally connected to the gates of a few FETs. To minimize current consumption in power down mode, this pin should be as close to
0V as possible. Turn-on voltage of some parts of the circuit may be as
low as 0.1V. In order to maximize output power this pin should be as
close to VDD as possible during normal operation.
Baseband input to the I mixer. This pin is DC coupled. Maximum output
power is obtained when the input signal has a peak to peak amplitude
of 5V. The DC level supplied to this pin should be VDD2/2. Input impedance of this pin is about 3kΩ.
Reference voltage for the I mixer. This voltage should be the same as
the DC voltage supplied to the I SIG pin. To obtain a carrier suppression of better than 25dB it may be tuned ±0.15V (relative to the I SIG
DC voltage). Without tuning it will typically be better than 25dB. Input
impedance of this pin is about 3kΩ.
Reference voltage for the Q mixer. This voltage should be the same as
the DC voltage supplied to the Q SIG pin. To obtain a carrier suppression of better than 25dB it may be tuned ±0.15V (relative to the Q SIG
DC voltage). Without tuning, the carrier suppression will typically be
better than 25dB. The input impedance of this pin is about 3 kΩ.
Baseband input to the Q mixer. This pin is DC coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 5V. The DC level supplied to this pin should be VDD2/2. Input
impedance of this pin is about 3kΩ.
Gain control of the IF input amplifier. This pin, when used as the only
gain control, will give a 30dB control range. When used together with
GC2, a 60dB range is available. When this pin is at 1.8V or lower, the
gain is set to the minimum; when this pin is at 3.8V or above, the gain is
set to the maximum; see the plot below for typical characteristics. If
fixed maximum output level is required, it is recommended to connect
this pin to VDD. There are no provisions in the chip for limiting the
bandwidth of the gain control, so very fast response times are available. If a slower response is desired, an external capacitor can be
added.
Gain control for the RF output amplifier. This pin has the same control
characteristics as GC1.
VDD1
VDD2
PD
I SIG
I REF
Same as pin 5.
Same as pin 4.
GCx
Same as pin 8.
Rev B3 990419
RF2413
LO1
11
MOD OUT+
12
13
MOD OUTGND1
14
MIX IN-
15
16
MIX IN+
GND2
17
LO2
High impedance modulator LO input. A shunt 56Ω resistor can be used
for matching. This pin is NOT internally DC blocked. An external blocking capacitor must be provided if the pin is connected to a device with
DC present. A DC path to ground (i.e. an inductor or resistor to ground)
is, however, acceptable at this pin. If a blocking capacitor is required, a
value of 1nF is recommended.
LO1
Balanced IF output port. If no filtering is required this pin can be connected directly to the MIX IN+ pin. This pin is NOT DC blocked and carries DC. A blocking capacitor of 1nF is needed when this pin is
connected to a DC path. An appropriate matching network may be
needed if an IF filter is used.
Same as pin 11, except complementary output.
See pin 11.
Ground connection for all baseband circuits, modulator and the IF
buffer amplifier. Keep traces physically short and connect immediately
to ground plane for best performance.
High impedance balanced input to the gain controlled IF stage. This pin
MIX IN+
has an internal DC blocking capacitor. If no IF filter is needed, this pin
may be connected directly to MOD OUT-. If an IF filter is used, an external shunt resistor to ground may be needed to provide correct matching
BIAS
for the filter.
Same as pin 14, except complementary input.
See pin 14.
GND3
19
GND4
20
RF OUT
MOD OUT-
MIX IN-
BIAS
Ground connection for the limiting LO2 buffer amplifier. Keep traces
physically short and connect immediately to ground plane for best performance.
Mixer LO Input port. A shunt 56Ω resistor can be used for matching.
This pin has internal DC blocking,
LO2
BIAS
18
MOD OUT+
BIAS
Ground connection for the IF mixer and the RF gain control stage. Keep
traces physically short and connect immediately to ground plane for
best performance.
Ground connection for the RF output stage. Keep traces physically
short and connect immediately to ground plane for best performance.
50Ω output. This pin is not internally DC blocked, and an external
blocking capacitor of 100pF is required.
RF OUT
Rev B3 990419
5-23
5
MODULATORS AND
UPCONVERTERS
10
RF2413
VDD
33 pF
1
100 nF
33 pF
2
CMOS
POWER
DOWN
POWER
CONTROL
VREF
3
18
4
17
50 Ω µstrip
MODULATORS AND
UPCONVERTERS
5
470 Ω
5
470 Ω
470 Ω
16
15
Q INPUT
7
14
GAIN
CONTROL 1
8
13
GAIN
CONTROL 2
LO 1
INPUT
470 Ω
Note 3
50 Ω µstrip
LO 2 INPUT
Note 1
56 Ω
Σ
6
100 nF
RF OUTPUT
19
100 nF
Q INPUT
1 µF
50 Ω µstrip
20
9
1 nF
Note 2
12
-45°
+45°
10
11
56 Ω
5-24
NOTE 1:
Optional; High input impedance without resistor. SMD
resistor mounted adjacent to package pin, grounded through
via to the ground plane.
NOTE 2:
If no IF filter is needed, tie pins 11, 12, 14, and 15 as shown.
Otherwise insert the filter and the matching network.
NOTE 3:
Gain control pins (8 and 9) may be tied together directly.
Rev B3 990419
RF2413
(Download Bill of Materials from www.rfmd.com.)
C5
100 pF
C1
33 pF
C6
100 nF
2
ISIG
J1
QSIG
J2
C2
33 pF
P2-3
50 Ω µstrip
C3
1 nF
18
4
17
C4
100 pF
50 Ω µstrip
16
5
6
15
7
14
8
13
5
FOR 50 Ω MATCH
12
-45°
+45°
11
P1
FOR 50 Ω MATCH
LO2 IN
J4
R2
56 Ω
Σ
10
R1
56 Ω
Rev B3 990419
3
9
RF OUT
J5
19
50 Ω µstrip
P2-1
LO1 IN
J3
POWER
CONTROL
50 Ω µstrip
P1-3
50 Ω µstrip
20
1
MODULATORS AND
UPCONVERTERS
P1-1
2413400 Rev A
P1-1
P1-3
P2
1
VCC
2
GND
3
REF
P2-1
P2-3
1
GAIN 1
2
GND
3
GAIN 2
5-25
RF2413
Board Size 0.039”; Board Material FR-4; Multi-Layer
MODULATORS AND
UPCONVERTERS
5
5-26
Rev B3 990419
RF2413
Pout vs. Gain Control Voltages
10
0
-10
-30
BB: 100 kHz, 1.5 Vpp
LO1: 124 MHz, 0 dBm
LO2: 569 MHz, 0 dBm
Vdd: 5.0V, Vref=2.5V
-40
-50
5
MODULATORS AND
UPCONVERTERS
Pout (dBm)
-20
Vg1=Vg2=V gain
Vg1=Vdd, Vg2=V gain
-60
Vg2=Vdd, Vg1=V gain
-70
1.5
2
2.5
3
3.5
4
4.5
5
Vgain (Volts)
Rev B3 990419
5-27
MODULATORS AND
UPCONVERTERS
RF2413
5
5-28
Rev B3 990419