S DM4410 S amHop Microelectronics C orp. Augus t , 2002 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m W ) TYP R ugged and reliable. 11 @ V G S = 10V 30V S urface Mount P ackage. 10A 15 @ V G S = 4.5V S O-8 1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS 30 V Gate-S ource Voltage V GS 20 V P arameter Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed (300ms Pulse Width) ID 10 A IDM 30 A Drain-S ource Diode Forward C urrent a IS 2.3 A Maximum P ower Dissipation a PD 2.5 W Operating Junction and S torage Temperature R ange T J , T S TG -55 to 150 C R JA 50 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S DM4410 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V Gate-Body Leakage IGS S V GS = 16V, V DS = 0V Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS Min Typ C Max Unit OFF CHAR ACTE R IS TICS 30 V 1 uA 100 nA 3 V ON CHAR ACTE R IS TICS b Forward Transconductance 1 1.5 V GS =10V, ID = 10A 11 13.5 m ohm V GS =4.5V, ID= 5A 15 20 m ohm V DS = 10V, V GS = 10V V DS = 10V, ID = 20A A 40 18 S 1375 PF 670 PF 200 PF 30 ns 32 ns 132 ns 30 ns DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =15V, V GS = 0V f =1.0MH Z c tD(ON) V DD = 15V, ID = 1A, V GS = 10V, R GE N = 6 ohm tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DS =10V, ID = 10A,V GS =10V 40 50 nC V DS =10V, ID = 10A,V GS =4.5V 20 8.2 24 nC V DS =10V, ID = 10A, V GS =10V 2 5.3 nC nC S DM4410 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 5 V GS = 0V, Is =2.3A VSD 0.76 1.1 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 25 25 V G S =10,9,8,7,6,5,4V 20 I D , Drain C urrent (A) ID , Drain C urrent(A) 20 15 10 5 25 C 15 10 T j=125 C 5 -55 C V G S =3V 0 0 0.5 1 1.5 2 2.5 0 0.0 3 V DS , Drain-to-S ource Voltage (V ) R DS (ON) , On-R es is tance(Ohms ) C , C apacitance (pF ) 3000 2400 1800 C is s 1200 C os s C rs s 0 5 10 15 20 25 3.0 4.0 5.0 6.0 F igure 2. Trans fer C haracteris tics 3600 0 2.0 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 600 1.0 30 0.030 V G S =10V 0.025 0.020 T j=125 C 0.015 25 C 0.010 -55 C 0.005 0 0 5 10 15 20 V DS , Drain-to S ource Voltage (V ) I D , Drain C urrent(A) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.09 V DS =V G S I D =250uA 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 ID=-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 40.0 Is , S ource-drain current (A) 20 15 10 5 V DS =15V 0 0 5 10 15 10.0 1.0 20 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 40 10 V DS =10V I D =40A 8 I D , Drain C urrent (A) gF S , T rans conductance (S ) 1.15 T j, J unction T emperature ( C ) 25 V G S , G ate to S ource V oltage (V ) 5 V th, Normalized G ate-S ource T hres hold V oltage S DM4410 6 4 2 10 R DS (O 0 5 10 15 20 25 30 Qg, T otal G ate C harge (nC ) it 10m 11 s ms 1s DC V G S =10V S ingle P ulse T A =25 C 0.1 0.1 35 40 L im 100 0.03 0 N) 1 10 30 50 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S DM4410 V DD ton RL V IN D td(off) V OUT V OUT 10% 5 tf 90% 90% VG S R GE N toff tr td(on) INVE R TE D 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 Duty C ycle=0.5 0.2 P DM 0.1 0.1 t1 0.05 1. 2. 3. 4. 0.02 S ingle P uls e 0.01 10 -4 10 -3 10 -2 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 t2 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 10 100