2SA1303 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284) V ICBO VCB=–150V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VEBO –5 V V(BR)CEO IC –14 A hFE VCE=–4V, IC=–5A 50min IB –3 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V VCE=–12V, IE=2A 50typ MHz VCB=–10V, f=1MHz 400typ pF PC 125(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 12 –5 –10 5 –500 500 0.25typ 0.85typ 0.2typ 0 –1 0 –2 –3 0 0 –0.2 –0.4 –0.6 –0.8 (V C E =–4V) 200 25˚C 100 –30˚C 50 30 –0.02 –5 –10 –14 Transient Thermal Resistance DC Cur rent Gain h FE Typ 50 f T – I E Characteristics (Typical) –0.1 –0.5 emp ) p) Tem eT Cas ˚C ( –1 –2 –1 –5 θ j-a – t Characteristics –10 –14 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) Co lle ctor Cu rr ent I C (A) Maxim um Power Dissip ation P C (W) Collector-Emitter Voltage V C E (V) –200 nk –100 si –10 at –0.2 –3 he Emitter Current I E (A) 10 ite 1 fin 0.1 Without Heatsink Natural Cooling In –1 100 ith –5 –0.5 0 0.02 C W 20 s 40 s p 0m Ty D 1m –10 s 60 130 m –40 10 80 10 Cut- off F req uency f T (MH Z ) DC Cur rent Gain h FE 125˚C –1 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 200 –0.5 0 –1.0 Base Current I B (A) (V C E =–4V) –0.1 se –5A –4 h FE – I C Characteristics (Typical) 20 –0.02 (Ca I C =–10A Collector-Emitter Voltage V C E (V) 100 –5 ˚C –1 –10 –30 I B =–20mA –2 25˚ –50mA –4 –14 125 –10 0mA –8 1.4 E (V C E =–4V) –3 Collector Current I C (A) –1 50 m A 5.45±0.1 C Weight : Approx 6.0g a. Type No. b. Lot No. θ j- a ( ˚C/W) 00 –6 mA 00 m A –7 mA 0.65 +0.2 -0.1 I C – V BE Temperature Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Collector Current I C (A) –200 2 3 B RL (Ω) –12 ø3.2±0.1 5.45±0.1 VCC (V) A A m m mA 00 00 00 –3 –5 –4 2.0±0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 4.8±0.2 b p) Tstg a Tem –150 ase VCEO 15.6±0.4 9.6 C (C –150 1.8 Unit 5.0±0.2 2SA1303 2.0 Conditions VCBO External Dimensions MT-100(TO3P) (Ta=25°C) Symbol Unit 4.0 ■Electrical Characteristics (Ta=25°C) 2SA1303 19.9±0.3 Symbol 4.0max ■Absolute maximum ratings Application : Audio and General Purpose 20.0min LAPT 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 17