2SA1493 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) –200 VCBO ■Electrical Characteristics Conditions V ICBO VCB=–200V –100max VEB=–6V –100max µA IC=–50mA –200min V 2SA1493 Unit –200 V IEBO VEBO –6 V V(BR)CEO IC –15 A hFE VCE=–4V, IC=–5A 50min∗ IB –5 A VCE(sat) IC=–10A, IB=–1A – 3.0max V VCE=–12V, IE=0.5A 20typ MHz VCB=–10V, f=1MHz 400typ pF PC 150(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 6.0±0.2 36.4±0.3 µA VCEO Tstg External Dimensions MT-200 (Ta=25°C) Symbol 24.4±0.2 2.1 2-ø3.2±0.1 9 7 Unit 21.4±0.3 2SA1493 a b 2 4.0max Symbol 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 3 5.45±0.1 B VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 12 –5 –10 5 –500 500 0.3typ 0.9typ 0.2typ 0 0 –1 –2 –3 –10A –5A 0 –4 0 Collector-Emi tter Voltage V C E (V) 200 DC C urrent G ain h FE 100 50 –30˚C 50 20 –0.02 –5 –10 –15 –0.1 –0.5 –1 –5 –10 –15 0.1 1 10 m C s 10 0m s 10ms s 2000 si nk –300 80 at –100 he –10 Collector-Emitter Voltage V C E (V) ite Without Heatsink Natural Cooling fin –1 120 In –5 –2 1000 P c – T a Derating –0.1 10 100 Time t(ms) ith Co lle ctor Cu rr ent I C ( A) D –10 –0.5 emp) 0.5 W 10 (CaseT 1 160 3m Typ 1 2 –50 20 20 –2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) 30 Emitter Current I E (A) –1 Collector Current I C (A) (V C E =–12V) 0.1 0 Base-Emittor Voltage V B E (V) 25˚C 100 f T – I E Characteristics (Typical) 0 0.02 0 –4 125˚C Collector Current I C (A) Cut- off F re quen cy f T ( MH Z ) DC C urrent G ain h FE Typ –1 –3 (V C E =–4V) 300 –0.5 –2 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) –0.1 –1 Base Current I B (A) h FE – I C Characteristics (Typical) 10 –0.02 –5 I C =–15A –30˚C –1 eTe mp) Temp ) I B =–5 0m A –5 –10 Cas –1 00 mA –2 (Case A ˚C ( –200m –10 125 mA (V C E =–4V) 25˚C –400 –15 Collector Current I C (A) mA θ j- a (˚C /W ) – 0 60 I C – V BE Temperature Characteristics (Typical) –3 Transient Thermal Resistance A E Weight : Approx 18.4g a. Type No. b. Lot No. Maximu m Power Dissip ation P C (W) 5A –1. Collector Current I C (A) –1 C V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V CE Characteristics (Typical) 3.0 +0.3 -0.1 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) –15 0.65 +0.2 -0.1 1.05 +0.2 -0.1 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 21