2SA1860 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) VCB=–150V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VCE(sat) W fT 150 °C COB –55 to +150 °C Tstg IC=–5A, IB=–500mA –2.0max V VCE=–12V, IE=2A 50typ MHz VCB=–10V, f=1MHz 400typ pF 3.0 A 80(Tc=25°C) 3.3 –3 PC ø3.3±0.2 a b 1.75 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2 -0.1 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 12 –5 –10 5 –500 500 0.25typ 0.85typ 0.2typ I B =–20mA 0 –1 –2 –3 –4 0 0 –0.2 –0.4 –0.6 –0.8 (V C E =–4V) 200 200 –1 –5 Transient Thermal Resistance DC Cur rent Gain h FE Typ 50 25˚C 100 –30˚C 50 30 –0.02 –10 –14 –0.1 p) Tem –1 –0.5 f T – I E Characteristics (Typical) –2 –1 –5 θ j-a – t Characteristics –10 –14 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 80 –40 10 –10 si nk Collect or Cur ren t I C (A) 40 at Without Heatsink Natural Cooling he –0.5 ite –1 60 fin 20 s –5 In 40 C s s ith Typ m W D 60 10 0m 1m M aximum Power Dissipa ti on P C (W) 80 Cu t-off Fre quen cy f T (M H Z ) DC Cur rent Gain h FE 125˚C –0.5 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =–4V) –0.1 0 –1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 –0.02 se –5A Collector-Emitter Voltage V C E (V) 100 –5 I C =–10A θ j- a ( ˚C/W) 0 –1 (Ca –50mA –5 –10 25˚ –100 mA –2 ˚C –1 50 m A –10 E (V C E =–4V) 125 mA C 3.35 Weight : Approx 6.5g a. Type No. b. Lot No. –14 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) 00 –7 Collector Current I C (A) –200 1.5 I C – V BE Temperature Characteristics (Typical) –3 A m mA mA mA 00 500 400 00 – –3 –6 – mA –14 4.4 B V CE ( sat ) – I B Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 ) IB Tj 50min∗ VCE=–4V, IC=–5A emp hFE eT V(BR)CEO A Cas V –14 3.45 ±0.2 ˚C ( –5 IC p) VEBO 5.5±0.2 –30 –150 Tem VCEO 15.6±0.2 ase V C (C –150 0.8±0.2 ICBO VCBO 5.5 Unit Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 2SA1860 Unit 1.6 ■Electrical Characteristics Conditions 2SA1860 23.0±0.3 Symbol 9.5±0.2 ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 16.2 LAPT 20 –0.1 0 0.02 0.1 1 Emitter Current I E (A) 34 10 –0.05 –2 Without Heatsink –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150